SANYO FC119 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Epitaxial Planar Silicon Transistor
High-Frequency General-Purpose Amp,
Differential Amp Applications
Ordering number:EN3061A
FC119
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mounting efficiency greatly.
· The FC119 is formed with two chips, being equivalent to the 2SC2814, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
C
T
Package Dimensions
unit:mm
2068
[FC119]
E1:Emitter1
E2:Emitter2
B2:Base2
C2:Collerctor2
B1:Base1
C1:Collector1
SANYO:CP6
03V
02V
5V
03Am
tinu1 002Wm
003Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
oitaRniaGtnerruCCDh
porDegatloVrettimEotesaBV
tcudorPhtdiwdnaB-niaGf
ecnaticapaCrefsnarTesreveRerCV
tnatsnoCemiTrotcelloCotesaBr
erugiFesioNFNVECI,V6=
niaGrewoPGPVECI,V6=
h
EF
EB
T
bbc'c
V
OBC
OBE
EF
BC
V
BE
V
EC
-/llams(
V
EC
)egral
egral(
V
EC
)llams-
V
EC
EC
V
EC
I,V01=
0=1.0Aµ
E
I,V4=
0=1.0Aµ
C
I,V6=
Am1=08002
C
I,V6=
Am1=8.089.0
C
I,V6=
Am1=0.151Vm
C
I,V6=
Am1=002023zHM
C
zHM1=f,V6=59.02.1Fp
I,V6=
C
C
C
zHM9.13=f,Am1=02sp
zHM001=f,Am1=0.3Bd
zHM001=f,Am1=52Bd
nimpytxam
Note: The specifications shown above are for each individual transistor.
Marking:119
52098HA (KT)/6169MO/5129MO, TS No.3061-1/5
sgnitaR
tinU
FC119
NF, PG Test Circuit
L1:1mmø plated wire, 10mmø 4T, tap : 2T from VBE side
L2:1mmø plated wire, 10mmø 7T, tap : 2T from VCE side
L3:1mmø enamel wire, 10mmø 3T
Unit (Capacitance:F)
No.3061-2/5
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