SANYO FC117 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

PNP Epitaxial Planar Silicon Composite Transistor

Low-Frequency

General-Purpose Amp Applications

Ordering number:EN3115

FC117

Features

· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount­ing efficiency greatly.

Package Dimensions

unit:mm

2067

· The FC117 is formed with two chips, being equiva­lent to the 2SA1753, placed in one package.

· Low collector to emitter saturation voltage.

· Excellent in thermal equilibrium and pair capability.

Electrical Connection

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

tnerruCesaBI

noitapissiDrotcelloCP

noitapissiDrewoPlatoTP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

oitaRniaGtnerruCCDh

tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuOboCV

egatloVnoitarutaSE-C

egatloVnoitarutaSE-BV

egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV

Note: The specifications shown above are for each individual transistor.
Marking:117

OBC
OEC
OBE

C

PC

B

C
T

OBC
OBE

hEF)1(VECI,V2–=
hEF)2(VECI,V2–=

/llams(

EF

)egral

T

V

1I

)tas(EC

V

2I

)tas(EC

)tas(EB
OBC)RB(
OEC)RB(

OBE)RB(

tinu1 002Wm

V
V

V

V

C
C

I

C

I

C

I

C

I

E

I,V51–=

BC
BE

EC

EC
EC

0=1.0–Aµ

E

I,V4–=

0=1.0–Aµ

C

Am01–=061065

C
C

I,V2–=

C

I,V2–=

C

I.Am5–=

B

I,Aµ01–=

E

R,Am1–=

I,Aµ01–=

C

Am004–=07

Am01–=8.089.0

Am05–=004zHM

zHM1=f,V01–=5.6Fp

Am5.0–=51–53–Vm

I.Am002–=

Am01–=002–063–Vm

B

I.Am002–=

Am01–=59.0–2.1–V

B

0=02–V

=∞ 51–V

EB

0=5–V

[FC117]

E1:Emitter1
B1:Base1
C2:Collerctor2
E2:Emitter2
B2:Base2
C1:Collector1

SANYO:CP6

sgnitaR

nimpytxam

02–V
51–V
5–V
005–Am
1–A
001–Am

003Wm

˚C
˚C

tinU

52098HA (KT)/5129MO, TS No.3115-1/3

FC117

No.3115-2/3