SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N-Channel Junction Silicon FET
Low-Frequency General-Purpose Amp,
Differential Amp Applications
Ordering number:EN3154
FC11
Features
· Adoption of FBET process.
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mounting efficiency greatly.
· The FC11 is formed with two chips, being equivalent
to the 2SK771, placed in one package.
· Excellent in the thermal equilibrium and pair capability and suitable for use in differential amp.
· Common source.
Electrical Connection
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVniarD-ot-etaGV
tnerruCetaGI
tnerruCniarDI
noitapissiDrewoPelbawollA
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBniarD-ot-etaGV
tnerruCffotuCetaGI
egatloVffotuCV
porDegatloVecruoS-ot-etaG
tnerruCniarDI
oitaRtnerruCniarDV
ecnattimdArefsnarTdrawroFY|sf|VSDV,V01=
oitaRecnattimdArefsnarTdrawroFV
ecncaticapaCtupnIssiCVSDV,V01=
ecnaticapaCrefsnarTesreveRssrCVSDV,V01=
erugiFesioNFNVSDR,V01=
Note*:The FC11 is classified by I
0.3D2.10.6E5.2
as follows (unit:mA)
DSS
∆V
XSD
SDG
G
D
P
D
T
I
SDG)RB(
G
V
SSG
V
)ffo(SG
V|
SG
V
SSD
Package Dimensions
unit:mm
2070
[FC11]
G1:Gate1
G2:Gate2
D2:Drain2
SC:Source Common
D1:Drain1
SANYO:CP5
04V
04–V
01Am
01Am
tinu1 002Wm
003Wm
sgnitaR
nimpytxam
V,Aµ01=
0=04–V
SD
V,V02–=
SG
SD
SG
SD
SD
SD
V0=0.1–An
SD
I,V01=
Aµ1=3.0–9.0–8.1–V
D
V–egral
SG
V,V01=
SG
I,V01=
SSD
SG
Y|,V01=
sf
SG
SG
k1= Ω I,
g
V,|llams
V0=*2.1*0.6Am
I/llams
SSD
zHk1=f,V0=5.40.9Sm
Y|/llams|
sf
zHM1=f,V0=0.9Fp
zHM1=f,V0=1.2Fp
D
I,V01=
SD
egral9.0
egral|9.0
Am1=03Vm
D
zHk1=f,Am1=5.1Bd
Marking:11
I
rank:D,E
DSS
The Specifications shown above are for each individual
transistor.
˚C
˚C
tinU
52098HA (KT)/7259TA, TS No.3154-1/3