SANYO F606 Datasheet
52098HA (KT)/71095MO(KOTO) TA-0112 No.4889-1/4
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:EN4889
FX606
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
SSD
06V
egatloVecruoS-ot-etaGV
SSG
51±V
)CD(tnerruCniarDI
D
2A
)esluP(tnerruCniarDI
PD
WP ≤ elcycytud,sµ01 ≤ %18A
noitapissiDrewoPelbawollA
P
D
6W
P
D
5.1W
noitapissiDlatoTP
T
2W
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Package Dimensions
unit:mm
2120
[FX606]
1:Gate1
2:Source1
3:Source2
4:Gate2
5:Drain2
6:Drain1
SANYO:XP6
(Bottom view)
Features
· Composite type composed of two low ON-resistance
N-channel MOSFET chips for ultrahigh-speed
switching and low-voltage drive.
· Facilitates high-density mounting.
· The FX606 is formed with two chips, each being
equivalent to the 2SK1470, placed in one package.
· Matched pair characteristics.
· Marking:606
Continued on next page.
Switching Time T est Circuit
Specifications
Absolute Maximum Ratings at Ta = 25˚C
˚C
˚C
Mounted on ceramic board (750mm2×0.8mm) 1 unit
Mounted on ceramic board (750mm
2
×0.8mm)
Tc=25˚C, 1 unit
Electrical Connection
1:Gate1
2:Source1
3:Source2
4:Gate2
5:Drain2
6:Drain1
(Top view)
FX606
No.4889-2/4
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
egatloVnwodkaerBS-DV
SSD)RB(
I
D
V,Am1=
SG
0=06V
tnerruCniarDegatloVetaG-oreZI
SSD
V
SD
V,V06=
SG
0=001Aµ
tnerruCegakaeLecruoS-ot-etaGI
SSG
V
SG
V,21±=
SD
0=01±Aµ
egatloVffotuCV
)ffo(SG
V
SD
Am1=DI,V01=0.10.2V
ecnattimdArefsnarTdrawroFY|sf|VSDI,V01=
D
A1=2.10.2S
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
R
)no(SD
I
D
V,A1=
SG
V01=53.054.0
Ω
R
)no(SD
I
D
V,A1=
SG
V4=54.06.0
Ω
ecnaticapaCtupnI
ssiCV
SD
zHM1=f,V02=051Fp
ecnaticapaCtuptuO
ssoCV
SD
zHM1=f,V02=06Fp
ecnaticapaCrefsnarTesreveR
ssrCV
SD
zHM1=f,V02=21Fp
emiTyaleDNO-nruT
t
)no(d
tiucriCtseTdeificepseeS6sn
emiTesiR
t
r
tiucriCtseTdeificepseeS01sn
emiTyaleDFFO-nruT
t
)ffo(d
tiucriCtseTdeificepseeS06sn
emiTllaF
t
f
tiucriCtseTdeificepseeS02sn
egatloVdrawroFedoiD
V
DS
I
S
V,A2.1=
SG
0=0.1V
Loading...