Sanyo EP124 User Manual

Discrete Devices

2008-6

SANYO Discrete Devices

SANYO Discrete Devices

SANYO's environmentally-considered discrete "ECoP"

contributes to the realization of comfortable life in

various aspects.

Contents

■ Devices for Mobile Equipment

■ Devices for SW Power Supply

■ Devices for Lighting

■ Devices for Modem

■ Devices for Infrared Sensor

■ Devices for Satellite/GPS

■ FM Transmitter

p2

p14

p28

p31

p31

p32

p33

Invisible Friendly Smart

Ultra-small
Thin-form
Light-weight

We provide discrete solutions based on "LIGHT, FAST, EFFICIENT & FRIENDLY"
concept to contribute to the creation of "Symbiosis Next-generation Electronic Devices"
aiming at the realization of better life.

High-efficient
Energy-saving

Multi-function
High-performance
High-integration

Devices for Mobile Equipment

Application Block

■

Charger

P3

AC Adapter

Control IC

Li-ion Battery

P5

Battery

DC-DC Converter / Load SW

Down Converter (Low end)

Down Converter (High end)

Up Converter (Low end)

Up Converter (High end)

P6

CPU

System

IrDA

MIC

M

USB IF

Card IF

Flash

CCD etc.

LCD

LCD-Backlight

P9

P11

P12

P11

P10

Charger

■

[GSM]

AC adapter

Input
5V to 6V/0.5A to 1A

Q1 D1

Power

management IC

MOSFETs (Pch) + Schottky Barrier Diodes (or MOSFETs (Pch))

Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C

V

Q1+D1

Q1+Q2

/

Type No. Package 2 in 1

CPH5802 CPH5

VEC2822

VEC8

VEC2818

VEC2303
VEC2301 Pch MOS 20 ±10 3 0.9 0.087 0.120 - - -

VEC8

ECH8654
ECH8611 Pch MOS 12 ±9 5 1.3 0.045 0.065 - - -

❈

ECH8652 Pch MOS 12 ±10 6 1.3 0.031 0.045 - - -

ECH8

Pch MOS 20 ±10 2 0.9 0.140 0.200 - - -

SBD 15 - 1 - - - 1 0.35 0.4

Pch MOS 20 ±10 3.5 1 0.077 0.108 - - -

SBD 15 - 2 - - - 2 0.5 0.56

Pch MOS 20 ±10 3.5 1 0.077 0.108 - - -

SBD 30 - 2 - - - 2 0.45 0.5

Pch MOS 12 ±8 4 0.9 0.054 0.075 - - -

Pch MOS 20 ±10 5 1.3 0.041 0.058 - - -

DSS

V

R

[V]

V

GSS
[V]

ID/

I

[A]

O

[CDMA]

Q1

AC adapter

Input
5V to 6V/0.5A to 1A

Power

management IC

Li-ion
battery

P

D

[W]

Q1 Q2

RDS(on) [Ω]

VGS=2.5V

typ max typ max

Q2

Li-ion
battery

I

[A]

VF [V]

F

: Development

❈

Transistors (PNP) + MOSFETs (Pch)

Type No. Package 2 in 1

PNP TR 30 3 1.1 1.5 75 0.11 0.16 - -

Pch MOS 12 4 1.1 - - - - 0.054 0.074

PNP TR 30 3 1.1 1.5 75 0.11 0.16 - -

Pch MOS 20 3 1.1 - - - - 0.087 0.120

Q1+Q2

VEC2904

VEC8

VEC2905

Absolute maximum ratings/Ta=25˚C

V

/

CEO

V

DSS
[V]

IC/

I

[A]

D

P
P

[W]

C
D

I

[A]

Electrical characteristics/Ta=25˚C

(sat)

[V]

V

CE

C

I

B

[mA]

typ max typ max

: Development

❈

RDS(on) [Ω]

VGS=2.5V

CPH6122 CPH6 PNP TR 30 3 1.3 1.5 75 0.120 0.180 - -

❈

Q1

Q2

MCH6122 MCPH6 PNP TR 30 3 1.0 1.5 75 0.120 0.180 - -

❈

VEC1106 VEC8 PNP TR 30 5 1.4 1.5 75 0.105 0.155 - ­MCH6320
MCH6321 Pch MOS 20 4 1.5 - - - - 0.072 0.098
MCH6336 Pch MOS 12 5 1.5 - - - - 0.047 0.066

MCPH6

Pch MOS 12 5 1.5 - - - - 0.047 0.066

MCH6337 Pch MOS 20 4.5 1.5 - - - - 0.053 0.075
ECH8304
ECH8301 Pch MOS 20 8 1.6 - - - - 0.026 0.037

ECH8

Pch MOS 12 9.5 1.6 - - - - 0.018 0.026

EMH1303 EMH8 Pch MOS 12 7 1.5 - - - - 0.027 0.036

2

3

Devices for Mobile Equipment

[CDMA]

TR1

USB bus power

SBD1

AC adapter

External connection

terminal

Charging terminal

Input
5V to 6V/0.6A to 1A

SBD2

TR2

Power

management IC

Li-ion
battery

MOSFET1

Main unit circuit

(load)

Li-ion Battery

■

B+

CELL

B-

P+

Control IC

P-

Battery Protection

Recommended Bipolar Transistors (PNP)

V

CEO

[V]

-12

-15 6.0 CPH3107

-30

I

C

[A]

MCPH3 MCPH6 CPH3 CPH6 VEC8 VEC8(2 in 1)

2.5 MCH3143 CPH3143

3.0 MCH3106 CPH3121 CPH6121

2.0 MCH3144 CPH3144

❈

3.0 MCH3109

MCH6122 CPH3122 CPH6122 VEC2102

5.0 CPH3110

Recommended Schottky Barrier Diodes (Single)

[Features]

• Package size: 1.6×0.8mm and IO=1A, Minimum in industry size !

• Thickness of Package: Typ. 0.60mm

V
[V]

30

R

I

[A]

0.2

0.5

1.0

O

ECSP1008-2 ECSP1608-4

SS0203EJ

SB0203EJ
SS0503EC SS0503EJ
SB0503EC SB0503EJ

SS1003EJ

SB1003EJ

Recommended Schottky Barrier Diodes (2 in 1: Parallel type)

[Features]

• Package size: 2.8×2.9mm and 30V/3A [SBS813/SBE813]

• Package size: 2.0×2.1mm and 30V/2A [SBS818], 15V/2A [SBS817]

• Thickness of Package: Typ. 0.75mm

V
[V]

15

30

R

I

O

[A]

1.0

2.0

MCPH5 EMH8 CPH5 VEC8

SBS808M SBS804

SBE808

SBS817

❈

SBE817

0.5 SBS806M SBE805

1.0

2.0

❈

SBS810 SBE807 SBS814

SBS818 SBS811

❈

SBE818 SBE811

3.0

: Development

❈

SBS813
SBE813

❈

VEC1105

❈

VEC1104

❈

VEC1106

: Development

❈

Recommended MOSFETs (Nch)

V

DSS
[V]

EMH8 ECH8 TSSOP8 SOP8

EMH2405 ECH8601R FTD2011A FW231A

20

EMH2407 ECH8649 FTD2017R FW232A

ECH8651R

30 EMH2402 ECH8622R FTD2019A

Recommended MOSFETs for Machine Tools

V

DSS
[V]

30

45

60

75 Nch 2SK4065 2SK4165
80 Pch 2SJ686

100

Polarity SMP ZP Drive

Nch 2SK4163
Pch TM1829Z
Nch 2SK4164
Pch TM1831Z
Nch 2SK4066 2SK4044
Pch 2SJ683

Nch 2SK4045
Pch 2SJ684

1.8V Drive

4.0V Drive

4

5

Devices for Mobile Equipment

DC-DC Converter/Load SW

■

(1) DC-DC Converter

Recommended MOSFETs

Back Converter

(Step Down)

Synchronous Back Converter

(Pch + Nch or Nch + Nch)

Boost Converter

(Step Up)

Package Type No.

SCH2809

SCH6

SCH2811 -30 830 4.0

MCH5815

MCPH5

MCH5818 530

MCH5805 -60 2300 50V/0.1A

CPH5812
CPH5815 290*

CPH5

CPH5818 490* 4.0
CPH5802
CPH5835 235 2.5
CPH5822 -30 290 4.0 30V/0.5A

VEC8

Package Type No.

VEC2811 -30 168 4.0 30V/2A
VEC2817 -12 62* 2.5 15V/3A

SCH1305 -12 310*

SCH6

SCH1406
SCH2806
SCH2816 440 4.0

MCH3317 -12 290*

MCPH3/5

MCH3456 15 160
MCH5811 20 210 15V/1A
MCH5819 30 520 4.0 30V/0.5A

CPH3321 -12 98* 1.8

CPH3/5

CPH3337 -30 77 4.0
CPH5809 30 90 2.5

CPH5805 30 150

Package Type No.

SCH2817 15 160

SCH6

SCH2806 20 210
SCH2819
SCH2808 560 4.0

MCH5826 15 160

MCPH5

MCH5811 20 210 15V/1A
MCH5809

MCh5819 520 4.0
CPH5803
CPH5811 63

CPH5

CPH5831 63 15V/2A
CPH5809

CPH5805 150

VEC8

VEC2813 20 66 1.8
VEC2816 30 99 4.0

V

V

V

DSS
[V]

-12

-12

-12

-20

DSS
[V]

20

DSS
[V]

30

30

20

30

RDS(on)

max [mΩ]

VGS=4V

(*: VGS=4.5V)

290* 1.8

290* 1.8

290*

145 1.8

RDS(on)

max [mΩ]

VGS=4V

(*: VGS=4.5V)

210

RDS(on)

max [mΩ]

VGS=4V

215 2.5

215 2.5

210

90 2.5

Drive

[V]

SBD

15V/0.5ASCH2810 530 2.5

15V/0.5A

4.0MCH5802 -30 1090 30V/0.5A

1.8

15V/2A

15V/0.5A

15V/1A

Drive

[V]

1.8

SBD

-

15V/0.5A

1.8

-

-CPH3313 -20 235 2.5

4.0

Drive

[V]

30V/0.5ACPH5819 30 520

SBD

1.8 15V/0.5A

30V/0.5A

1.8

15V/0.5A

30V/0.5A

1.8

4.0

15V/1A

30V/0.5ACPH5819 520

30V/2A

[Bipolar Transistor Use Example]

Step up chopper

V

IN

V

OUT

Step down chopper

V

IN

V

OUT

Bipolar Transistors + Schottky Barrier Diodes

Absolute maximum ratings/Ta=25˚C

TR SBD TR SBD

Type No. Package

CPH5706

V

I

P

V

CEO

[V]

[A]

C

C

[W]

RRM

[V]

I

[A]

O

30 1.5 0.9 30 0.7 2 0.1 200 560 0.75 15 0.25 0.375 0.7 0.55 10 200 0.1 10

V

[V]

CE

IC

[A]

h

FE

min max

CPH5705 30 3 0.9 15 1 2 0.5 200 560 1.5 30 0.155 0.23 0.5 0.35 6 500 0.1 15

CPH5

CPH5702 30 3 0.9 30 0.7 2 0.5 200 560 1.5 30 0.12 0.18 0.7 0.55 15 80 0.1 10

CPH5703 50 3 0.9 50 0.5 2 0.1 200 560 1 50 0.08 0.12 0.5 0.55 25 50 0.1 10

Electrical characteristics/Ta=25˚C

VCE (sat) [V] VF [V] IR [

IC

[A]

IB

[mA]

typ max

I

[A]

F

max

VR
[V]

μ

A] t

max

rr

IF

[A]

Bipolar Transistors (PNP)

Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C

Type No. Package

MCH3144
MCH3109 30 3 0.8 *
MCH3145 50 2 0.8 *

MCPH3

V

CEO

[V]

I

[A]

C

30 2 0.8 *

MCH3105 50 3 0.8 *

*1: When mounted on ceramic substrate (600mm2×0.8mm)

P
[W]

h

C

1

1

1

1

FE

min max

IC

[A]

200 560 1.5 75 0.17 0.26 MCH3244
200 560 1.5 30 0.155 0.23 MCH3209
200 560 1 50 0.165 0.33 MCH3245
200 560 1 50 0.1 0.2 MCH3205

VCE (sat) [V]

IB

[mA]

typ max

Bipolar Transistors (NPN)

Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C

h

Type No. Package

MCH3244
MCH3221 *
MCH3245 50 2 0.8 *
MCH3222 *

*1: When mounted on ceramic substrate (600mm2×0.8mm) *2: MBIT III series (New Product)

2

MCPH3

2

V

CEO

[V]

I

[A]

C

30 2 0.8 *
30 3 0.8 *

50 3 0.8 *

P
[W]

C

1

1

1

1

FE

min max

200 560 1.5 75 0.16 0.24 MCH3144
250 400 1.5 30 0.08 0.12 ­200 560 1 50 0.13 0.26 MCH3145
250 400 1 50 0.06 0.09 -

B18 B22

Co

Ca

Co

IC

[A]

VCE (sat) [V]

IB

[mA]

typ max

[ns]

equivalent

max

+SB07-03C

+SB05-05CP

Internal

chip

product

CPH3115
+SBS006

CPH3109
+SBS004

CPH3209

CPH3205

Complementary

product

Complementary

product

Electrical

connection

B18

B18

B22

B22

EB

A

6

BECaA

7

Devices for Mobile Equipment

(2) Load SW
Recommended MOSFETs

V

DSS

MCPH6 CPH6 VEC8 EMH8 Application Sample: Pch + Nch

LCD-Backlight

■

[Power MOSFET Use Example]

Push-Pull

Half-Bridge

Full-Bridge

20V MCH6628 CPH6605 - EMH2603

30V MCH6614 CPH6615 VEC2612 EMH2602

Power MOSFETs (Pch + Nch)

Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C

Type No. Package Polarity

MCH6627

●

MCH6644

●

MCH6628

●

MCH6613

MCPH6

MCH6614

MCH6615

MCH6634

CPH6614

●

CPH6615

●

CPH6

CPH6605

CPH6610

VEC2602

●

VEC8

VEC2612

●

EMH2602

●

EMH8

EMH2603

●

SCH2602 SCH6

M07 M11 M12 M13 M26 M30

DSD

D1 G2 S2

V

DSS
[V]

V

GSS
[V]

Pch 30 20 1 0.8 0.42 0.55 0.72 1 75 2.6
Nch 30 20 1.4 0.8 0.23 0.3 0.4 0.56 65 2.5
Pch 30 20 1.2 0.8 0.32 0.42 0.59 0.83 104 3.3
Nch 30 20 1.8 0.8 0.16 0.21 0.3 0.42 95 3.2
Pch 20 10 1 0.8 0.38 0.5 0.54 0.76 115 1.5
Nch 30 10 0.35 0.8 2.9 3.7 3.7 5.2 7 1.58
Pch 30 10 0.2 0.8 8 10.4 11 15.4 7.5 1.43
Nch 30 10 0.35 0.8 2.9 3.7 3.7 5.2 7 1.58
Pch 30 10 0.4 0.8 2.4 3.1 3.5 4.9 28 2
Nch 30 10 0.35 0.8 2.9 3.7 3.7 5.2 7 1.58
Pch 30 10 0.4 0.8 2.4 3.1 3.5 4.9 28 2
Nch 30 10 0.65 0.8 0.9 1.2 1.2 1.7 30 2.34
Pch 30 10 0.4 0.8 1.5 1.9 2 2.8 40 0.83
Nch 30 10 0.7 0.8 0.7 0.9 0.8 1.15 30 1
Pch 30 20 1.2 0.8 0.32 0.42 0.59 0.83 104 3.3
Nch 30 20 1.8 0.8 0.15 0.195 0.29 0.41 95 3.2
Pch 30 20 1.8 0.9 0.18 0.235 0.32 0.45 226 5.5
Nch 30 20 2.5 0.9 0.079 0.105 0.15 0.21 187 5.2
Pch 20 10 1.5 0.8 0.18 0.235 0.24 0.34 40 3.2
Nch 30 10 0.65 0.8 0.9 1.2 1.2 1.7 30 2.34
Pch 30 9 0.4 0.8 1.4 1.8 2 2.8 40 0.83
Nch 30 20 1.4 0.8 0.245 0.32 0.415 0.58 65 2.5
Pch 30 20 3 0.9 0.065 0.086 0.117 0.168 510 11
Nch 30 20 4 0.9 0.037 0.048 0.07 0.099 370 8.5
Pch 30 20 3 0.9 0.073 0.095 0.115 0.161 180 4.9
Nch 30 20 3 0.9 0.065 0.086 0.117 0.168 510 11
Pch 30 20 2 1 0.053 0.069 0.105 0.15 280 6.4
Nch 30 20 3.5 1 0.115 0.15 0.215 0.31 285 6.7
Pch 20 10 2 1.1 0.165 0.235 0.26 0.52 420 5
Nch 30 10 0.15 0.6 3.7 5.2 6.4 12.8 7 2
Pch 12 10 1.5 0.6 - - 0.235 0.31 160 2.6
Nch 30 10 0.35 0.6 - - 2.9 3.7 7 1.58

I

D

[A]

DSD

[W]

N1

Controller

Controller

N2

CCFL

CCFL

: New products

●

P

D

VGS=10V VGS=4(4.5)V

typ max typ max

RDS (on) [Ω]

Ciss

[pF]

Qg

[nC]

Electrical

connection

M11

M11

M11

M11

M11

Power MOSFETs

Type No. Package Polarity

VEC2402 VEC8 Nch+Nch 30 99

ECH8402 Nch 30 32

ECH8

VEC2602

VEC8

VEC2612

ECH8609

ECH8402 Nch 30 32

ECH8

Nch+Nch 30 75

Pch 30 168
Nch 30 99
Pch 30 168
Nch 30 161
Pch 30 120
Nch 30 75

V

DSS
[V]

P1

N1

CCFL

RDS (on) max [mΩ]

(VGS=4V)

CCFL

Controller

V

IN

[V]

5 to 12

CCFL

Set size

[inch]

Small Screen

2.5 to 8

P2P1

Controller

N2N1

CCFL

Use example

Push-PullECH8606

Half-Bridge
Full-Bridge

ECH8302 Pch 30 48

M11

M11

M12

M12

[Bipolar Transistor Use Example]

Self-Excitation Type

V

IN

Q1

M07

M07

Q2

CCFL

M13

M13

M13

Bipolar Transistors

V

CES

Type No. Package Polarity

CPH5503
CPH5504 NPN+NPN 80 3

CPH5

NPN+NPN 40* 3

(*V

CBO)

[V]

I

[A]

C

V

IN

[V]

5 to 12

Set size

[inch]

Small Screen

2.5 to 8

Use example

Self-Excitation Type

D1 D1 D2

D1 D1 G1/D2

M30

M26

D1D2

S

GG

S1 G1 D2

GG

S

8

S1 G1D2S2 G2

S1 G2 S2

G1SG2

9