Sanyo EP124 User Manual

Discrete Devices

2008-6

SANYO Discrete Devices

SANYO Discrete Devices

SANYO's environmentally-considered discrete "ECoP"

contributes to the realization of comfortable life in

various aspects.

Contents

■ Devices for Mobile Equipment

■ Devices for SW Power Supply

■ Devices for Lighting

■ Devices for Modem

■ Devices for Infrared Sensor

■ Devices for Satellite/GPS

■ FM Transmitter

p2

p14

p28

p31

p31

p32

p33

Invisible Friendly Smart

Ultra-small
Thin-form
Light-weight

We provide discrete solutions based on "LIGHT, FAST, EFFICIENT & FRIENDLY"
concept to contribute to the creation of "Symbiosis Next-generation Electronic Devices"
aiming at the realization of better life.

High-efficient
Energy-saving

Multi-function
High-performance
High-integration

Devices for Mobile Equipment

Application Block

■

Charger

P3

AC Adapter

Control IC

Li-ion Battery

P5

Battery

DC-DC Converter / Load SW

Down Converter (Low end)

Down Converter (High end)

Up Converter (Low end)

Up Converter (High end)

P6

CPU

System

IrDA

MIC

M

USB IF

Card IF

Flash

CCD etc.

LCD

LCD-Backlight

P9

P11

P12

P11

P10

Charger

■

[GSM]

AC adapter

Input
5V to 6V/0.5A to 1A

Q1 D1

Power

management IC

MOSFETs (Pch) + Schottky Barrier Diodes (or MOSFETs (Pch))

Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C

V

Q1+D1

Q1+Q2

/

Type No. Package 2 in 1

CPH5802 CPH5

VEC2822

VEC8

VEC2818

VEC2303
VEC2301 Pch MOS 20 ±10 3 0.9 0.087 0.120 - - -

VEC8

ECH8654
ECH8611 Pch MOS 12 ±9 5 1.3 0.045 0.065 - - -

❈

ECH8652 Pch MOS 12 ±10 6 1.3 0.031 0.045 - - -

ECH8

Pch MOS 20 ±10 2 0.9 0.140 0.200 - - -

SBD 15 - 1 - - - 1 0.35 0.4

Pch MOS 20 ±10 3.5 1 0.077 0.108 - - -

SBD 15 - 2 - - - 2 0.5 0.56

Pch MOS 20 ±10 3.5 1 0.077 0.108 - - -

SBD 30 - 2 - - - 2 0.45 0.5

Pch MOS 12 ±8 4 0.9 0.054 0.075 - - -

Pch MOS 20 ±10 5 1.3 0.041 0.058 - - -

DSS

V

R

[V]

V

GSS
[V]

ID/

I

[A]

O

[CDMA]

Q1

AC adapter

Input
5V to 6V/0.5A to 1A

Power

management IC

Li-ion
battery

P

D

[W]

Q1 Q2

RDS(on) [Ω]

VGS=2.5V

typ max typ max

Q2

Li-ion
battery

I

[A]

VF [V]

F

: Development

❈

Transistors (PNP) + MOSFETs (Pch)

Type No. Package 2 in 1

PNP TR 30 3 1.1 1.5 75 0.11 0.16 - -

Pch MOS 12 4 1.1 - - - - 0.054 0.074

PNP TR 30 3 1.1 1.5 75 0.11 0.16 - -

Pch MOS 20 3 1.1 - - - - 0.087 0.120

Q1+Q2

VEC2904

VEC8

VEC2905

Absolute maximum ratings/Ta=25˚C

V

/

CEO

V

DSS
[V]

IC/

I

[A]

D

P
P

[W]

C
D

I

[A]

Electrical characteristics/Ta=25˚C

(sat)

[V]

V

CE

C

I

B

[mA]

typ max typ max

: Development

❈

RDS(on) [Ω]

VGS=2.5V

CPH6122 CPH6 PNP TR 30 3 1.3 1.5 75 0.120 0.180 - -

❈

Q1

Q2

MCH6122 MCPH6 PNP TR 30 3 1.0 1.5 75 0.120 0.180 - -

❈

VEC1106 VEC8 PNP TR 30 5 1.4 1.5 75 0.105 0.155 - ­MCH6320
MCH6321 Pch MOS 20 4 1.5 - - - - 0.072 0.098
MCH6336 Pch MOS 12 5 1.5 - - - - 0.047 0.066

MCPH6

Pch MOS 12 5 1.5 - - - - 0.047 0.066

MCH6337 Pch MOS 20 4.5 1.5 - - - - 0.053 0.075
ECH8304
ECH8301 Pch MOS 20 8 1.6 - - - - 0.026 0.037

ECH8

Pch MOS 12 9.5 1.6 - - - - 0.018 0.026

EMH1303 EMH8 Pch MOS 12 7 1.5 - - - - 0.027 0.036

2

3

Devices for Mobile Equipment

[CDMA]

TR1

USB bus power

SBD1

AC adapter

External connection

terminal

Charging terminal

Input
5V to 6V/0.6A to 1A

SBD2

TR2

Power

management IC

Li-ion
battery

MOSFET1

Main unit circuit

(load)

Li-ion Battery

■

B+

CELL

B-

P+

Control IC

P-

Battery Protection

Recommended Bipolar Transistors (PNP)

V

CEO

[V]

-12

-15 6.0 CPH3107

-30

I

C

[A]

MCPH3 MCPH6 CPH3 CPH6 VEC8 VEC8(2 in 1)

2.5 MCH3143 CPH3143

3.0 MCH3106 CPH3121 CPH6121

2.0 MCH3144 CPH3144

❈

3.0 MCH3109

MCH6122 CPH3122 CPH6122 VEC2102

5.0 CPH3110

Recommended Schottky Barrier Diodes (Single)

[Features]

• Package size: 1.6×0.8mm and IO=1A, Minimum in industry size !

• Thickness of Package: Typ. 0.60mm

V
[V]

30

R

I

[A]

0.2

0.5

1.0

O

ECSP1008-2 ECSP1608-4

SS0203EJ

SB0203EJ
SS0503EC SS0503EJ
SB0503EC SB0503EJ

SS1003EJ

SB1003EJ

Recommended Schottky Barrier Diodes (2 in 1: Parallel type)

[Features]

• Package size: 2.8×2.9mm and 30V/3A [SBS813/SBE813]

• Package size: 2.0×2.1mm and 30V/2A [SBS818], 15V/2A [SBS817]

• Thickness of Package: Typ. 0.75mm

V
[V]

15

30

R

I

O

[A]

1.0

2.0

MCPH5 EMH8 CPH5 VEC8

SBS808M SBS804

SBE808

SBS817

❈

SBE817

0.5 SBS806M SBE805

1.0

2.0

❈

SBS810 SBE807 SBS814

SBS818 SBS811

❈

SBE818 SBE811

3.0

: Development

❈

SBS813
SBE813

❈

VEC1105

❈

VEC1104

❈

VEC1106

: Development

❈

Recommended MOSFETs (Nch)

V

DSS
[V]

EMH8 ECH8 TSSOP8 SOP8

EMH2405 ECH8601R FTD2011A FW231A

20

EMH2407 ECH8649 FTD2017R FW232A

ECH8651R

30 EMH2402 ECH8622R FTD2019A

Recommended MOSFETs for Machine Tools

V

DSS
[V]

30

45

60

75 Nch 2SK4065 2SK4165
80 Pch 2SJ686

100

Polarity SMP ZP Drive

Nch 2SK4163
Pch TM1829Z
Nch 2SK4164
Pch TM1831Z
Nch 2SK4066 2SK4044
Pch 2SJ683

Nch 2SK4045
Pch 2SJ684

1.8V Drive

4.0V Drive

4

5

Devices for Mobile Equipment

DC-DC Converter/Load SW

■

(1) DC-DC Converter

Recommended MOSFETs

Back Converter

(Step Down)

Synchronous Back Converter

(Pch + Nch or Nch + Nch)

Boost Converter

(Step Up)

Package Type No.

SCH2809

SCH6

SCH2811 -30 830 4.0

MCH5815

MCPH5

MCH5818 530

MCH5805 -60 2300 50V/0.1A

CPH5812
CPH5815 290*

CPH5

CPH5818 490* 4.0
CPH5802
CPH5835 235 2.5
CPH5822 -30 290 4.0 30V/0.5A

VEC8

Package Type No.

VEC2811 -30 168 4.0 30V/2A
VEC2817 -12 62* 2.5 15V/3A

SCH1305 -12 310*

SCH6

SCH1406
SCH2806
SCH2816 440 4.0

MCH3317 -12 290*

MCPH3/5

MCH3456 15 160
MCH5811 20 210 15V/1A
MCH5819 30 520 4.0 30V/0.5A

CPH3321 -12 98* 1.8

CPH3/5

CPH3337 -30 77 4.0
CPH5809 30 90 2.5

CPH5805 30 150

Package Type No.

SCH2817 15 160

SCH6

SCH2806 20 210
SCH2819
SCH2808 560 4.0

MCH5826 15 160

MCPH5

MCH5811 20 210 15V/1A
MCH5809

MCh5819 520 4.0
CPH5803
CPH5811 63

CPH5

CPH5831 63 15V/2A
CPH5809

CPH5805 150

VEC8

VEC2813 20 66 1.8
VEC2816 30 99 4.0

V

V

V

DSS
[V]

-12

-12

-12

-20

DSS
[V]

20

DSS
[V]

30

30

20

30

RDS(on)

max [mΩ]

VGS=4V

(*: VGS=4.5V)

290* 1.8

290* 1.8

290*

145 1.8

RDS(on)

max [mΩ]

VGS=4V

(*: VGS=4.5V)

210

RDS(on)

max [mΩ]

VGS=4V

215 2.5

215 2.5

210

90 2.5

Drive

[V]

SBD

15V/0.5ASCH2810 530 2.5

15V/0.5A

4.0MCH5802 -30 1090 30V/0.5A

1.8

15V/2A

15V/0.5A

15V/1A

Drive

[V]

1.8

SBD

-

15V/0.5A

1.8

-

-CPH3313 -20 235 2.5

4.0

Drive

[V]

30V/0.5ACPH5819 30 520

SBD

1.8 15V/0.5A

30V/0.5A

1.8

15V/0.5A

30V/0.5A

1.8

4.0

15V/1A

30V/0.5ACPH5819 520

30V/2A

[Bipolar Transistor Use Example]

Step up chopper

V

IN

V

OUT

Step down chopper

V

IN

V

OUT

Bipolar Transistors + Schottky Barrier Diodes

Absolute maximum ratings/Ta=25˚C

TR SBD TR SBD

Type No. Package

CPH5706

V

I

P

V

CEO

[V]

[A]

C

C

[W]

RRM

[V]

I

[A]

O

30 1.5 0.9 30 0.7 2 0.1 200 560 0.75 15 0.25 0.375 0.7 0.55 10 200 0.1 10

V

[V]

CE

IC

[A]

h

FE

min max

CPH5705 30 3 0.9 15 1 2 0.5 200 560 1.5 30 0.155 0.23 0.5 0.35 6 500 0.1 15

CPH5

CPH5702 30 3 0.9 30 0.7 2 0.5 200 560 1.5 30 0.12 0.18 0.7 0.55 15 80 0.1 10

CPH5703 50 3 0.9 50 0.5 2 0.1 200 560 1 50 0.08 0.12 0.5 0.55 25 50 0.1 10

Electrical characteristics/Ta=25˚C

VCE (sat) [V] VF [V] IR [

IC

[A]

IB

[mA]

typ max

I

[A]

F

max

VR
[V]

μ

A] t

max

rr

IF

[A]

Bipolar Transistors (PNP)

Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C

Type No. Package

MCH3144
MCH3109 30 3 0.8 *
MCH3145 50 2 0.8 *

MCPH3

V

CEO

[V]

I

[A]

C

30 2 0.8 *

MCH3105 50 3 0.8 *

*1: When mounted on ceramic substrate (600mm2×0.8mm)

P
[W]

h

C

1

1

1

1

FE

min max

IC

[A]

200 560 1.5 75 0.17 0.26 MCH3244
200 560 1.5 30 0.155 0.23 MCH3209
200 560 1 50 0.165 0.33 MCH3245
200 560 1 50 0.1 0.2 MCH3205

VCE (sat) [V]

IB

[mA]

typ max

Bipolar Transistors (NPN)

Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C

h

Type No. Package

MCH3244
MCH3221 *
MCH3245 50 2 0.8 *
MCH3222 *

*1: When mounted on ceramic substrate (600mm2×0.8mm) *2: MBIT III series (New Product)

2

MCPH3

2

V

CEO

[V]

I

[A]

C

30 2 0.8 *
30 3 0.8 *

50 3 0.8 *

P
[W]

C

1

1

1

1

FE

min max

200 560 1.5 75 0.16 0.24 MCH3144
250 400 1.5 30 0.08 0.12 ­200 560 1 50 0.13 0.26 MCH3145
250 400 1 50 0.06 0.09 -

B18 B22

Co

Ca

Co

IC

[A]

VCE (sat) [V]

IB

[mA]

typ max

[ns]

equivalent

max

+SB07-03C

+SB05-05CP

Internal

chip

product

CPH3115
+SBS006

CPH3109
+SBS004

CPH3209

CPH3205

Complementary

product

Complementary

product

Electrical

connection

B18

B18

B22

B22

EB

A

6

BECaA

7

Devices for Mobile Equipment

(2) Load SW
Recommended MOSFETs

V

DSS

MCPH6 CPH6 VEC8 EMH8 Application Sample: Pch + Nch

LCD-Backlight

■

[Power MOSFET Use Example]

Push-Pull

Half-Bridge

Full-Bridge

20V MCH6628 CPH6605 - EMH2603

30V MCH6614 CPH6615 VEC2612 EMH2602

Power MOSFETs (Pch + Nch)

Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C

Type No. Package Polarity

MCH6627

●

MCH6644

●

MCH6628

●

MCH6613

MCPH6

MCH6614

MCH6615

MCH6634

CPH6614

●

CPH6615

●

CPH6

CPH6605

CPH6610

VEC2602

●

VEC8

VEC2612

●

EMH2602

●

EMH8

EMH2603

●

SCH2602 SCH6

M07 M11 M12 M13 M26 M30

DSD

D1 G2 S2

V

DSS
[V]

V

GSS
[V]

Pch 30 20 1 0.8 0.42 0.55 0.72 1 75 2.6
Nch 30 20 1.4 0.8 0.23 0.3 0.4 0.56 65 2.5
Pch 30 20 1.2 0.8 0.32 0.42 0.59 0.83 104 3.3
Nch 30 20 1.8 0.8 0.16 0.21 0.3 0.42 95 3.2
Pch 20 10 1 0.8 0.38 0.5 0.54 0.76 115 1.5
Nch 30 10 0.35 0.8 2.9 3.7 3.7 5.2 7 1.58
Pch 30 10 0.2 0.8 8 10.4 11 15.4 7.5 1.43
Nch 30 10 0.35 0.8 2.9 3.7 3.7 5.2 7 1.58
Pch 30 10 0.4 0.8 2.4 3.1 3.5 4.9 28 2
Nch 30 10 0.35 0.8 2.9 3.7 3.7 5.2 7 1.58
Pch 30 10 0.4 0.8 2.4 3.1 3.5 4.9 28 2
Nch 30 10 0.65 0.8 0.9 1.2 1.2 1.7 30 2.34
Pch 30 10 0.4 0.8 1.5 1.9 2 2.8 40 0.83
Nch 30 10 0.7 0.8 0.7 0.9 0.8 1.15 30 1
Pch 30 20 1.2 0.8 0.32 0.42 0.59 0.83 104 3.3
Nch 30 20 1.8 0.8 0.15 0.195 0.29 0.41 95 3.2
Pch 30 20 1.8 0.9 0.18 0.235 0.32 0.45 226 5.5
Nch 30 20 2.5 0.9 0.079 0.105 0.15 0.21 187 5.2
Pch 20 10 1.5 0.8 0.18 0.235 0.24 0.34 40 3.2
Nch 30 10 0.65 0.8 0.9 1.2 1.2 1.7 30 2.34
Pch 30 9 0.4 0.8 1.4 1.8 2 2.8 40 0.83
Nch 30 20 1.4 0.8 0.245 0.32 0.415 0.58 65 2.5
Pch 30 20 3 0.9 0.065 0.086 0.117 0.168 510 11
Nch 30 20 4 0.9 0.037 0.048 0.07 0.099 370 8.5
Pch 30 20 3 0.9 0.073 0.095 0.115 0.161 180 4.9
Nch 30 20 3 0.9 0.065 0.086 0.117 0.168 510 11
Pch 30 20 2 1 0.053 0.069 0.105 0.15 280 6.4
Nch 30 20 3.5 1 0.115 0.15 0.215 0.31 285 6.7
Pch 20 10 2 1.1 0.165 0.235 0.26 0.52 420 5
Nch 30 10 0.15 0.6 3.7 5.2 6.4 12.8 7 2
Pch 12 10 1.5 0.6 - - 0.235 0.31 160 2.6
Nch 30 10 0.35 0.6 - - 2.9 3.7 7 1.58

I

D

[A]

DSD

[W]

N1

Controller

Controller

N2

CCFL

CCFL

: New products

●

P

D

VGS=10V VGS=4(4.5)V

typ max typ max

RDS (on) [Ω]

Ciss

[pF]

Qg

[nC]

Electrical

connection

M11

M11

M11

M11

M11

Power MOSFETs

Type No. Package Polarity

VEC2402 VEC8 Nch+Nch 30 99

ECH8402 Nch 30 32

ECH8

VEC2602

VEC8

VEC2612

ECH8609

ECH8402 Nch 30 32

ECH8

Nch+Nch 30 75

Pch 30 168
Nch 30 99
Pch 30 168
Nch 30 161
Pch 30 120
Nch 30 75

V

DSS
[V]

P1

N1

CCFL

RDS (on) max [mΩ]

(VGS=4V)

CCFL

Controller

V

IN

[V]

5 to 12

CCFL

Set size

[inch]

Small Screen

2.5 to 8

P2P1

Controller

N2N1

CCFL

Use example

Push-PullECH8606

Half-Bridge
Full-Bridge

ECH8302 Pch 30 48

M11

M11

M12

M12

[Bipolar Transistor Use Example]

Self-Excitation Type

V

IN

Q1

M07

M07

Q2

CCFL

M13

M13

M13

Bipolar Transistors

V

CES

Type No. Package Polarity

CPH5503
CPH5504 NPN+NPN 80 3

CPH5

NPN+NPN 40* 3

(*V

CBO)

[V]

I

[A]

C

V

IN

[V]

5 to 12

Set size

[inch]

Small Screen

2.5 to 8

Use example

Self-Excitation Type

D1 D1 D2

D1 D1 G1/D2

M30

M26

D1D2

S

GG

S1 G1 D2

GG

S

8

S1 G1D2S2 G2

S1 G2 S2

G1SG2

9

Devices for Mobile Equipment

Flash Unit

■

[Use Example]

Battery

S/W element

Trans

Control IC

FRD

300V

Xe-tube

C

M

Trigger
transformer

IGBT

IGBT
DRIVER

Bipolar Transistors (NPN)

Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C

h

Type No. Package Polarity

CPH3223
CPH3236 NPN 50 3 0.9 250 400 1 50 0.06 0.1

CPH

NPN 50 3 0.9 200 560 1 50 0.09 0.13

V

CEO

[V]

[A]

I

C

P

[W]

C

FE

min max

IC

[A]

VCE (sat) [V]

IB

[mA]

typ max

MOSFETs (Nch)

Absolute maximum ratings/Ta=25˚C

Type No. Package Polarity

MCH6422

●

MCH6424 Nch 60 10 3 1.5 - - 0.085 0.115 0.095 0.135 690 8.2
MCH6423 Nch 60 20 2 1.5 0.17 0.22 0.21 0.3 - - 220 6.4

●

MCPH6

V

DSS
[V]

V

GSS
[V]

I

[A]

P

D

[W]

D

VGS=10V VGS=4V VGS=2.5V

typ max typ max typ max

Nch 60 10 2 1.5 - - 0.17 0.22 0.19 0.27 325 4.2

Electrical characteristics/Ta=25˚C

RDS (on) [Ω]

Ciss

[pF]Qg[nC]

Bipolar Transistors (NPN) + MOSFETs (Nch)

Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C

TR MOSFET TR MOSFET

Type No. Package

V

CEO

[V]

I

[A]

P

V

V

C

C

DSS

[W]

[V]

GSS
[V]

I

[A]

D

VEC2901 VEC8 50 5 1.1 30 10 0.15 0.25 250 400 26 1.6 53

P

[W]

D

h

FE

min max

Cob

typ

[pF]

VCE (sat) [V] RDS (on) [

IC

[A]

I

B

[mA]

typ max

0.055

VGS=4V

typ max typ max

0.11 2.9 3.7 3.7 5.2 7 1.58

Ω

]

VGS=2.5V

IGBT Drivers

IO+/IO-typ [mA]

VDD=5V VDD=2.5V

Type No. Package

V

DD

[V]

VIN / V

[V]

OUT

P

[W]

V

D

min

[V]

V

IH

max

[V]

IL

CL [pF] CL [pF]

TND721MH5 MCPH5 -0.3 to 7.5 -0.3 to VDD+0.3 0.8 2 1 5000 50 5000 10

: New products

●

Ciss

typ

[pF]

Qg
typ

[nC]

Condenser Microphone

■

[High-Frequency Devices Use Example]

Impedance transformation

diaphragm

Back plate

G

SD

Sound

The electric capacity changes

V

CC

V

OUT

Electric signal output

Mobile phone
Hands-free
Digital camera
Digital video camera
Portable games
other

High-Frequency Devices for Condenser Microphone

Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C

V

Type No. Package

TF246
TF252 20 1 30 0.14 0.35 1.4 3.1 0.95 1.0 -102
TF202C
TF222B 20 1 100 0.14 0.35 1.4 5.0 1.1 -2.0 -102

USFP

TSSFP

TF218THC
TF208TH 20 1 100 0.14 0.35 1.4 5.0 1.1 -2.0 -102

VTFP

V

GDS
GDO

[V]

I

D

[mA]

P

D

[mW]

20 1 30 0.14 0.35 1.0 3.5 0.65 -3.0 -110

20 1 100 0.14 0.35 1.0 3.5 0.65 -3.0 -110

20 1 100 0.14 0.35 1.0 3.5 0.65 -3.0 -110

I

DSS

[mA]

min max

|yfs|

typ(*min)

[mS]

Ciss

typ

[pF]

Crss

typ

[pF]

G
typ

[dB]

V

TF252TH 20 1 100 0.14 0.35 1.4 3.1 0.95 1.0 -102

Type No.

Package

(unit: mm)

Absolute maximum ratings/Ta=25˚C

V

IN

[V]

V

DD

[V]

P

D

[mW]

V

DD

min max min max

Electrical characteristics/Ta=25˚C

[V]

Ci

typ

[pF]

I

DD

[μA]

G

[dB]

V

EC4K11KF ECSP1410 (1.4×1.0×0.4) ±0.5 4 100 2 3.6 2.7 140 100 12 -90
EC4K14MF ECSP1410 (1.4×1.0×0.32) ±0.5 4 100 2 3.6 2.7 140 200 12 -90

USB (3.3V) Signal Line Protection Devices

■

[Use Example]

D–

D+

Vbus

Shorted for use

USB

Controller

V

NO

max
[dB]

V

NO

[dB]

Flash Circuit IGBTs

Absolute maximum ratings/Ta=25˚C

V

Type No. Package Polarity

TIG030TS

●

TIG032TS Nch 400 ±6 180 10 1 0.4 1 150 2.5 3.4 4.8 10 1 5100

●

TSSOP8

V

CES

[V]

Nch 400 ±6 150 10 1 0.5 1.2 150 4 3.7 5.4 10 1 2610

GES

(DC)

[V]

I

CP

[A]

VGE(off) [V] VCE (sat) [V] Cies

I

V

C

CE

[mA]

[V]

Electrical characteristics/Ta=25˚C

IC

V

min max

[A]

GE

[V]

min max

V

[V]

CE

: New products

●

f

[MHz]

FRD

V

Type No. Package

V

[V]

R

I

O

[mA]

F

IF=0.1A

[V]

RE0208DA SOD-323 800 200 4.0 3 55

10

I

R

VR=400V

[μA]

IF=IR=100mA, See specifi ed test circuit

trr max

[ns]

typ

[pF]

Recommended Device

CT [pF]

f=1MHz/

VR=0V

Type No. Package

IR=1μA

min

VR [V]

IR=1mA

max

VF [V]

IF=1mA

IL [μA]

VR=2.5V

VS002E4 ECSP1608-4 3.4 4.0 0.35 1 16

typ

11

Noise clamping of USB eye patterns

Abnormal signals of 4.0V or more
eliminated (overshoot eliminated)

+D

–D

Abnormal signals of 0.35V or more
eliminated (undershoot eliminated)

Devices for Mobile Equipment

Devices for Motor

■

[MOSFETs Use Example]

Devices for Fan Motor

Single-phase Motor (

Motor Driver

H-Bridge, Half pre.

LB11660V

): #5 Single-phase Motor (H-Bridge): #6 Three-phase Motor: #7

Q3

Q1

Q1

Q3

Q5

M M

Q1

Q2

Q2 Q4

Q2 Q4

Q6

MOSFETs

Absolute maximum ratings/Ta=25˚C

Type No. Package Polarity

MCH3410
MCH3421 Nch 100 20 0.8 0.9 0.68 0.89 0.85 1.2 165 4.8

MCPH3

Nch 30 20 2 0.9 0.115 0.15 0.19 0.27 120 3.6

V

DSS

[V]

V

GSS
[V]

I

[A]

P

D

D

[W]

VGS=10(15)V VGS=4(4.5)V

typ max typ max

MCH6423 MCPH6 Nch 60 20 2 1.5 0.17 0.22 0.21 0.3 220 6.4
CPH3418
CPH3424 Nch 60 20 1.8 1 0.17 0.22 0.21 0.3 220 6.4

CPH3

Nch 30 20 1.4 0.9 0.23 0.3 0.4 0.56 65 2.5

CPH3427 Nch 100 20 1 1 0.48 0.63 0.58 0.81 240 6.5
VEC2402 VEC8 Nch+Nch 30 20 4 0.9 0.037 0.048 0.07 0.099 370 8.5
CPH6616 CPH6 Nch+Nch 30 20 2.5 0.9 0.079 0.105 0.15 0.21 187 5.2

Electrical characteristics/Ta=25˚C

RDS (on) [Ω]

Ciss

[pF]Qg[nC]

MOSFETs (Pch+Nch)

Type No. Package Polarity

VEC2602 VEC8

ECH8609 ECH8

FW340

FW377

FW356

SOP8

FW359

FW360

Pch 30 20 3 0.9 0.065 0.086 0.117 0.168 510 11

Nch 30 20 4 0.9 0.037 0.048 0.07 0.099 370 8.5

Pch 30 20 4 1.3 0.05 0.067 0.087 0.12 550 2.2

Nch 30 20 6 1.3 0.025 0.034 0.052 0.075 510 11

Pch 30 20 5 1.8 0.041 0.053 0.07 0.098 1000 16.5

Nch 30 20 5 1.8 0.037 0.048 0.064 0.09 460 8.6

Pch 35 20 5 1.8 0.037 0.049 0.062 0.087 1224 24

Nch 35 20 6 1.8 0.025 0.033 0.043 0.061 1050 20

Pch 60 20 3.5 2 0.11 0.145 0.15 0.21 990 22

Nch 60 20 5 2 0.043 0.058 0.056 0.084 790 16

Pch 60 20 3 1.8 0.11 0.145 0.145 0.205 990 22

Nch 60 20 3 1.8 0.11 0.145 0.15 0.215 300 7.8

Pch 100 20 2 1.4 0.24 0.315 0.32 0.45 935 20

Nch 100 20 2 1.4 0.175 0.22 0.22 0.31 530 13

Absolute maximum ratings/Ta=25˚C

V

DSS

[V]

V

GSS
[V]

[A]

I

P

D

D

[W]

VGS=10V VGS=4(4.5)V

typ max typ max

Electrical characteristics/Ta=25˚C

RDS (on) [Ω]

Ciss

[pF]Qg[nC]

MOSFETs

Absolute maximum ratings/Ta=25˚C

Type No. Package Polarity

2SJ646
2SJ634 Pch 60 20 8 20 0.105 0.138 0.145 0.205 990 22

TP

Pch 30 20 8 15 0.058 0.075 0.097 0.136 510 11 #6, #7

V

DSS

[V]

V

GSS
[V]

[A]

I

P

D

D

[W]

VGS=10(15)V VGS=4(4.5)V

typ max typ max

2SJ637 Pch 100 20 5 20 0.24 0.312 0.32 0.45 935 20
2SK4067
2SK3492 Nch 60 20 8 15 0.115 0.15 0.155 0.22 300 7.8

TP

Nch 30 20 8 10 0.085 0.115 0.155 0.22 260 6 #6, #7

2SK3617 Nch 100 20 6 15 0.18 0.225 0.225 0.315 530 13

Electrical characteristics/Ta=25˚C

RDS (on) [Ω]

Ciss

[pF]Qg[nC]

M

Use

example

#5

Use

example

#6

#6, #7

#7

#6

#6, #7

Use

example

#7

#7

[Bipolar Transistor Use Example]

• For the purpose of power consumption reduction,
low saturated voltage transistor is recommended.

• PCP and TP packages with good radiation are
recommended.

• Composite type (B-E bias resistor, and C-E diode

V

IN

V

CC

are embedded) is recommended for miniaturization
purpose.

H

Hall element

GND

GND

Bipolar Transistors

Absolute maximum ratings/Ta=25˚C

Type No. Package Polarity

2SA2124

●

PNP 30 2 1.3 *
2SA2012 PNP 30 5 1.3 *
2SA2125 PNP 50 3 1.3 *

●

2SA2013 PNP 50 4 1.3 *

PCP

2SA1416 PNP 100 1 1.3 *
2SA1417 PNP 100 2 1.5 *
2SA2126

●

PNP 50 3 15 *
2SA2039 PNP 50 5 15 *
2SA2040 PNP 50 8 15 *
2SA2169 PNP 50 10 20 *

●

TP
2SA1592 PNP 100 1 10 *
2SA1593 PNP 100 2 15 *

V

CEO

[V]

I

[A]

C

P
[W]

C

min max

2

200 560 1.5 75 0.2 0.4 2SC6044

3

200 560 1.5 30 0.14 0.21 2SC5565

3

200 560 1 50 0.125 0.23 2SC5964

3

200 560 1 50 0.105 0.18 2SC5566

3

100 400 0.4 40 0.2 0.6 2SC3646

3

100 400 1 100 0.22 0.6 2SC3647

1

200 560 1 50 0.135 0.27 -

1

200 560 1 50 0.115 0.195 2SC5706

1

200 560 3.5 175 0.23 0.39 2SC5707

1

200 560 5 250 0.29 0.58 2SC6017

1

100 400 0.4 40 0.2 0.6 2SC4134

1

100 400 1 100 0.22 0.6 2SC4135

2SA1552 PNP 160 1.5 1 100 400 0.5 50 0.2 0.5 2SC4027

2

2SC6044

●

NPN 30 2 1.3 *
2SC5565 NPN 30 5 1.3 *
2SC5964 NPN 50 3 1.3 *

●

2SC5566 NPN 50 4 1.3 *

PNP

2SC3646 NPN 100 1 1.3 *
2SC3647 NPN 100 2 1.5 *
2SC5706

NPN 50 5 15 *
2SC5707 NPN 50 8 15 *
2SC6017 NPN 50 10 20 *

●

2SC4134 NPN 100 1 10 *

TP

2SC4135 NPN 100 2 15 *

200 560 1.5 75 0.17 0.26 2SA2124

3

200 560 1.5 30 0.125 0.19 2SA2012

3

200 560 1 50 0.1 0.15 2SA2125

3

200 560 1 50 0.085 0.13 2SA2013

3

100 400 0.4 40 0.1 0.4 2SA1416

3

100 400 1 100 0.13 0.4 2SA1417

1

200 560 1 50 0.09 0.135 2SA2039

1

200 560 3.5 175 0.16 0.24 2SA2040

1

200 700 5 250 0.18 0.36 2SA2169

1

100 400 0.4 40 0.1 0.4 2SA1592

1

100 400 1 100 0.13 0.4 2SA1593

2SC4027 NPN 160 1.5 1 100 400 0.5 50 0.13 0.45 2SA1552

*1: Tc=25˚C *2: When mounted on ceramic substrate (450mm2×0.8mm) *3: When mounted on ceramic substrate (250mm2×0.8mm)

Electrical characteristics/Ta=25˚C

h

FE

IC

[A]

[mA]

VCE (sat) [V]

IB

typ max

Complementary

Bipolar Transistors: Built-in Damper Diode

Absolute maximum ratings/Ta=25˚C

h

Type No. Package Polarity

2SB1397
2SB1325 PNP 20 4 1.5 *

PNP

PNP 20 2 1.3 *

V

CEO

[V]

[A]

I

C

P

[W]

C

2SB1324 PNP 30 3 1.5 *
2SB1739 TP PNP 30 3 1.5 *

●

2SD2100
2SD1999 NPN 20 4 1.5 *

PNP

NPN 20 2 1.3 *

2SD1998 NPN 30 3 1.5 *
2SD2720 TP NPN 30 3 1.5 *

●

*1: Tc=25˚C *2: When mounted on ceramic substrate (450mm2×0.8mm) *3: When mounted on ceramic substrate (250mm2×0.8mm)

FE

min

3

70 1 50 0.25 0.5 1.5 1.6

3

70 3 150 0.25 0.5 1.5 1.5

3

70 2 100 0.25 0.6 1.5 0.8

3

70 2 100 0.28 0.6 1.5 0.8

3

70 1 50 0.25 0.5 1.5 1.6

3

70 3 150 0.25 0.5 1.5 1.5

3

70 2 100 0.2 0.5 1.5 0.8

3

70 2 100 0.23 0.5 1.5 0.8

Electrical characteristics/Ta=25˚C

VCE (sat) [V]

IC

[A]

IB

[mA]

typ max

V

F

IF=0.5A

[V]

: New products

●

product

: New products

●

R

BE

(kΩ)

12

13

Devices for SW Power Supply

Switching Power Supply Types & Recommended Power MOSFETs Map

■

Universal AC Input

20

Forward (1 or 2 used)
V

: 600to800V

DSS

Switching Devices

■

[MOSFET/FRD/SBD Use Example]

ACIN

FRD

[A]

D

14

Flyback

8

RCC or PWM
V

: 600 to 800V

DSS

Drain Current/I

6

30 50 100 150 200 250 300 350 400 450 500

Application Example

■

ACIN

PFC FRD

PFC

Control

PFC
MOSFET

(1) Flyback

For low-output use (up to 150W)
few externally-conneted parts required
1 MOSFET is used for switching

(2) Forward

Usable for middle-large ouput (100 to 300W)
Several switching MOSFETs can be used in parallel
Several switching MOSFETs can be used

(3) Half-Bridge

For middle output (<150 to 400W)
MOSFET with a lower voltage than flyback or
Forward voltage can be used
2 switching MOSFETs are used

(4) Full-Bridge

For high output (>300 to 400W)
MOSFET with a lower voltage than flyback or
forward voltage can be used
4 switching MOSFETs are used

Half-bridge (2 used)
V

: 450to500V

DSS

Output Power/P

V

CC

V

CC

V
Pulse IN

V

OUT

Main SW
MOSFET

Main Control

Main SW
MOSFET

Main Control

CC

Main SW
MOSFET

Main SW
MOSFET

CC

Full-bridge (4 used)
V

: 450to500V

DSS

[W]

When output becomes large, a high V
is required for the device

ex) Flyback Circuit

Output 80W → V
Output 120W → V

SBD

SBD

SBD

(3) Half-Bridge Circuit

SBD/FRD

SBD/FRD

(4) Full-Bridge Circuit

SBD

DSS
DSS

(1) Flyback Circuit

DC

Output

(2) Forward Circuit

DC

Output

Output

≥600V
≥700V

DC

DC

Output

DSS

PFC

Control

PFC
MOSFET

Main SW
MOSFET

SBD

SBD

(1) Power MOSFET/SBD/FRD for Adapter

Recommended Devices

Set Spec PFC Main SW Rectifi er

Applications/Power

Game machine

50W

Notebook PC

65W

General-purpose

75 to 90W

V

OUT

[V]

5 2.0 to 4.0

12 1.0 to 2.0 SBT100-16JS

20 2.0 to 4.0 -

5 2.0 to 4.0
12
24 SBT100-16JS

I

OUT

[A]

3.0 to 5.0

MOSFET MOSFET SBD

-

2SK4085LS
500V/0.33Ω

2SK4086LS

(600V/0.58Ω)

2SK4087LS

(600V/0.47Ω)

2SK4087LS

(600V/0.47Ω)

SBT80-04J

SBT100-16JS

SBT80-04J

SBT150-10JS

(2) Power MOSFET/SBD/FRD for other power supply

Recommended Devices [Other sets]

Set Specifi cation PFC Main SW Rectifi er

Set Specifi cation

Printer

BL DVD recorder Domestic (Japan) 100

DVD recorder Domestic (Japan) 60 - - 2SK4097LS SBT80-06J

Desktop PC W/W >200

PDP TV W/W >300

Domestic (Japan) 50 - - 2SK4096LS SBT150-10JS

W/W 50 - - 2SK4098LS SBT150-10JS

Power

[W]

FRD MOSFET MOSFET SBD

RD0506LS 2SK4097LS 2SK4087LS SBT100-16JS

❈

RD1006LS 2SK4085LS 2SK4125 SBT350-04J

❈

RD1006LS 2SK4124 2SK4124 SBT100-16JS

❈

DC

Output

❈

: Development

Main SW
MOSFET

14

SBD

15

Devices for SW Power Supply

LCD TV

■

(3) Bipolar Transistors for Adapter

[Bipolar Transistor Use Example]

Output

AC Input

Bipolar Transistors [V

Type No. Package

Starting
resistor

R

BE

=700V/800V Series (AC Adapter)]

CBO

Absolute maximum ratings/Ta=25˚C

V

CBO
[V]

V

CEO
[V]

Main
S/W Tr

Thermistor

I

C

[A]

Electrical characteristics/Ta=25˚C

h

FE

IC

min max

[A]

[mA]

Control IC

VCE (sat) [V]

IC

IB

[mA]

2SC5823 TP 700 400 1.5 0.1 20 50 700 140 0.8 100/220 3/6
2SC5808 TP 700 400 2.5 0.3 20 50 1200 240 0.8 100/220 4/8
TT2240NMP NMP 700 400 1.0 0.1 15 30 500 100 0.8 100/220 1.5/3

❈

2SC6065-V NMP 700 400 1.5 0.1 20 50 700 140 0.8 100/220 3/6
2SC6083 SPA 700 350 1.0 0.1 100 200 500 100 0.8 100 1.5
2SC6083A SPA 700 400 1.0 0.1 50 100 500 100 0.8 100/220 1.5/3
2SC6146 SPA 800 350 1.0 0.1 100 200 500 100 0.8 220 3

❈

CPH3249 CPH3 700 350 1.0 0.1 100 200 500 100 0.8 100/220 1.5/3
CPH3249A CPH3 700 400 1.0 0.1 50 100 500 100 0.8 100/220 1.5/3

+5.6 to 5.8V/600 to 700mA

-

Input

Voltage

max

[V]

: Development

❈

AC Adapter

Circuits

[W]

Recommended Devices by LCD-TV Panel Size

(1) When BL inverter is half-bridge circuit, and AV output is fl yback circuit

ACIN

PFC

Control

PFC Circuit

PFC FRD(1)

V

CC

Pulse IN

Main SW
MOSFET(2)

SBD(2)/FRD(2)

PFC
MOSFET(1)

Main SW
MOSFET(2)

SBD(2)/FRD(2)

SBD(1)

SBD(1)
Main SW
MOSFET(3)

Main Control

Lineup

◆

SPS for

AV Processor

Panel Size

[inch]

Set Spec PFC

P

OUT

[W]

V

OUT

[V]

FRD(1) MOSFET(1) MOSFET(2) MOSFET(3)

2SK4086LS

up to 21 70 5/12 - -

(also used for

BL power supply)

26 to 32 150

37 to 42 250

at least 42 350

5 to 12

24

5 to 12

24

5 to 12

24/60

RD1006LS 2SK4085LS 2SK4098LS 2SK4096LS×2

❈

RD0506LS 2SK4124×2 2SK4098LS 2SK4097LS×2

❈

RD1006LS 2SK4124×3 2SK4101LS 2SK4084LS×2

❈

[Power supply block]

• Circuit
For under 21inch, used for both AV processor (main power supply) and BL inverter power supply.
For larger than 26inch, 2-power supply system is usually used (one is for BL inverter use, and the other is for AV processor use).

• Secondary-side diode voltage
In case of fl yback circuit, diode voltage should be 100V and above for 12V output (when PFC output is 380V).
In case of half-bridge circuit, diode voltage should be 100V and above for 24V output (when PFC output is 380V).

Half-Bridge Power Supply

Flyback Power Supply

DC

Output

* For under 21inch, also used for

BL inverter power supply.

SPS for

BL Inverter

-

DC

Output

: Development

❈

2nd Rectifi er

SBD(1)

SBD(2)/FRD(2)

SBT80-06J(1)

SBT100-16JS(1)

SBT100-16JS(1)
SBT100-16JS(2)
SBT100-16JS(1)
SBT150-10JS(2)
SBT100-16JS(2)
SBT150-10JS(1)

RD2004LS(2)

16

17

Devices for SW Power Supply

(2)

The example when BL inverter adoptes PFC voltage direct input circuit, and AV output adopts fl yback circuit

(3) Devices for BL Inverter

1) Recommended Devices for Bridge Circuit

ACIN

PFC Circuit

PFC FRD(1)

PFC Direct input BL Inverter

PFC

Control

PFC
MOSFET(1)

Main SW
MOSFET(3)

Pulse IN

Driver

FRD(2)

FRD(2)

FRD(2)

FRD(2)

Multi CCFL, Parallel

CCFL

CCFL

CCFL

Main SW
MOSFET(3)

Flyback Power Supply for AV Processor

SBD

DC

Output

SBD

Main SW
MOSFET(2)

Main Control

Lineup

◆

Set Spec PFC Direct BL Inverter

Panel Size

[inch]

26 to 37 200 12

P

OUT

[W]

V

OUT

[V]

SPS for AV Processor

FRD(1) MOSFET(1) FRD(2) MOSFET(3) MOSFET(2) SBD

RD1006LS 2SK4085LS❈ RD0506LS 2SK4086LS×2 2SK4098LS SBT100-16JS

❈

: Development

❈

2nd Rectifi er

37 to 42 250 12 to 18❈ RD1006LS 2SK4124×2❈ RD0506LS 2SK4086LS×2 2SK4098LS SBT100-16JS×2

at least 42 350 12 to 18❈ RD1006LS 2SK4124×3❈ RD1006LS 2SK4085LS×2 2SK4101LS SBT100-16JS×2

Push-Pull Type

[Feature]

• Compared with half-bridge type, although doubled voltage is needed, meanwhile RDS(on) can be suppressed due to the use of Nch,

so a good symmetry can be achieved.
Because the current capacity is large, multi tubes driving can be made possible, and the needed parts count can be reduced.

Set Size

[inch]

21 to 32

at least 32

2.5 to 8

15 to 19

at least 32

up to 12

15 to 24

15 to 24Nch 2SK3704 (60V/15mΩ)

at least 60Nch 2SK4096 (500V/710mΩ)

5 to 12

5 to 12

15 to 24

5 to 12

15 to 24

at least 120Nch 2SK3092 (400V/2.3Ω)

Controller

Contoller

Separately-excitation Package Polarity Type No.

Nch 2SK3285 (30V/34mΩ)

N1

VIN

SMP

Nch 2Sk3352 (30V/21mΩ)
Nch 2SK3816 (60V/41mΩ)
Nch 2SK3818 (60V/18mΩ)
Nch 2SK2592 (250V/200mΩ) at least 60
Nch 2SK3703 (60V/28mΩ)

CCFL

TO-220ML

TO-220FI

Nch 2SK2160 (200V/350mΩ)
Nch 2SK2161 (200V/250mΩ)

N2

Nch 2SK4084 (500V/400mΩ)

VEC8

(VECxxxx)

ECH8

(ECH8xxx)

TSSOP8

(FTSxxxx(single))

(FTDxxxx(Dual))

Nch + Nch VEC2402 (30V/99mΩ)

Nch + Nch ECH8606 (30V/75mΩ)

Nch ECH8402 (30V/32mΩ)

Nch + Nch FTD8009 (30V/33mΩ)

Nch + Nch ECH8616 (60V/133mΩ) 15 to 24

Nch + Nch FW241 (30V/150mΩ)
Nch + Nch FW261 (30V/83mΩ)
Nch + Nch FW803 (30V/27mΩ)

N1

Nch FSS250 (30V/54mΩ)
Nch FSS804 (30V/20mΩ)

SOP8

(FSSxxxx(single))

(FWxxxx(Dual))

Nch + Nch FW808 (30V/37mΩ)
Nch + Nch FW250 (60V/215mΩ)
Nch + Nch FW256 (60V/84mΩ)

Nch FSS273 (45V/34mΩ)

Nch+Nch FW248 (45V/42mΩ)

N2

Nch FSS275 (60V/62mΩ)
Nch + Nch FW257 (100V/220mΩ)
Nch + Nch FW225 (450V/11.2Ω) at least 120

CCFL

CCFL

Nch SFT1402 (35V/40mΩ)

Nch SFT1403 (35V/25mΩ)

Nch 2SK3352 (30V/21mΩ)

Nch SFT1407 (45V/29mΩ)

TP

SMP

Nch SFT1405 (45V/74mΩ)

Nch 2SK3615 (60V/85mΩ)

Nch 2SK3816 (60V/41mΩ)

Nch 2SK3818 (60V/18mΩ)

Nch 2SK1920 (250V/700mΩ)

Nch 2SK3850 (600V/18.5Ω)

V

IN

[V]

18

19

Devices for SW Power Supply

Full-bridge Type, Half-bridge Type

[Feature: Full-bridge/Half-bridge Type]

• Pch/Nch drive

• A large current device can drive multi tubes, thus the needed parts count can be reduced.

[Feature: Half-bridge Type (High voltage input)]

• A highly effi ective system can be achived by using a high side driver, whitch can make the inverter cicuit to be operated at a PFC

voltage level.
MOSFET should be Nch type and withstand a high voltage.

Separately-excitation Package Polarity Type No.

Full-Bridge

Controller

CCFL

CCFL

Half-Bridge (Nch + Pch)

P1

Controller

N1

Half-Bridge

P1

Controller

N1

Half-Bridge (High +B Voltage)

VIN(Low)

P1

Driver TND5XX

N1

CCFL

CCFL

P2P1

N2N1

CCFL

VIN(High)

CCFL

SMP

Controller

TO-220ML

TO-220FI

VEC8

(VECxxxx)

ECH8

(ECH8xxx)

SOP8

(FSSxxxx(single))

(FWxxxx(Dual))

SMP

TP

Nch 2SK3815 (60V/55mΩ)

Pch 2SJ659 (60V/133mΩ)

Nch 2SK3819 (100V/130mΩ)

Pch 2SJ664 (100V/136mΩ)

Nch 2SJ3702 (60V/55mΩ)
Pch 2SJ650 (60V/135mΩ)
Nch 2SK3706 (100V/130mΩ)
Pch 2SJ655 (100V/136mΩ)
Nch 2SK2161 (200V/350mΩ)
Pch 2SJ405 (200V/500mΩ)
Nch 2SK4096 (500V/710mΩ)

Nch 2SK4084 (500V/400mΩ)
Nch + Pch
Nch + Pch

VEC2602 (30V/99•168mΩ)

ECH8609 (30V/75•120mΩ)
Nch ECH8402 (30V/32mΩ)
Pch ECH8302 (30V/48mΩ)

Nch + Nch ECH8616 (60V/133mΩ)
Pch + Pch ECH8615 (60V/295mΩ)
Nch + Pch FW344 (30V/150•147mΩ)
Nch + Pch FW340 (30V/83•98mΩ)
Nch + Pch FW342 (30V/52•98mΩ)

Nch FSS802 (30V/26mΩ)
Pch FSS163 (30V/31mΩ)

Nch + Pch FW349 (30V/84•106mΩ)

Nch + Pch FW359 (30V/215•205mΩ)

Nch FSS273 (45V/34mΩ)

Pch FSS145 (45V/40mΩ)

Nch 2SK3351 (30V/21mΩ)
Pch 2SJ646 (30V/154mΩ)
Nch 2SK3285 (30V/34mΩ)
Nch 2SK3352 (30V/21mΩ)
Nch SFT1402 (35V/69mΩ)
Pch SFT1302 (35V/111mΩ)
Nch SFT1405 (45V/74mΩ)
Pch SFT1305 (45V/147mΩ)
Nch 2SK3615 (60V/85mΩ)
Pch 2SJ635 (60V/92mΩ)
Nch 2SK3818 (60V/18mΩ)
Pch 2SJ662 (60V/38mΩ)
Nch 2SK3979 (200V/450mΩ)
Pch 2SJ679 (200V/980mΩ)
Nch 2SK1920 (250V/700mΩ)
Pch 2SJ281 (250V/2Ω)

Set Size

[inch]

at least 32

at least 32

2.5 to 8

15 to 19

at least 32

V

IN

[V]

12 to 24

at least 60

12 to 24

at least 60

5 to 12

15 to 24

5 to 12

15 to 24

5 to 12

15 to 24

at least 120

Self-excitation Type (collector resonance)

[Feature]

• Multi tubes can be driven by using a power device with large current capacity.
also, the number of inverter circuits and used parts can be reduced.

→

• 4 to 8 tubes can be driven by circuit.

• Best choice for low-cost sets.

Self-excitation Package Type No.

V

IN

2SC5915 (120V/10A)

SMP

Q1

Q2

CCFL

TO-220ML

TO-220FI

2SC5999 (120V/25A)

2SC5888 (80V/10A)

2SC6080 (80V/13A) up to 15V

2SC5264 (800V/5A) at least 100V

2) Recommended Power MOSFETs & Bipolar Transistors by Monitor Size

[Power MOSFET Lineup by Input Voltage and Monitor Size]

PCP Package

V

Type No.

2SK3614 60 4
2SK3944 60 2
2SJ632 60 2
2SK3489 30 8
2SK3490 30 8
2SJ616 30 6

DSS

[V]

I

[A]

D

SOP8 Package

V

Type No.

FW250 60 3
FW359 60 3
FW248 45 6
FW349 45 4

DSS
[V]

I

[A]

D

Monitor Size [inch] (Standard)

20 32

[Bipolar Transistor Lineup by Input Voltage and Monitor Size]

VEC8 Package

V

Type No.

CES

[V]

VEC2202 120 2.5
VEC2201 100 3

CPH3 Package

V

Type No.

CPH3252 180 2
CPH3251 150 2
CPH3247 120 2.5
CPH3239 100 5
CPH3236 100 3
CPH3223 100 3

CES

[V]

[A]

[A]

I

C

I

C

PCP Package

V

Type No.

PCP1201 150 2.5
PCP1202 180 2
2SC6095 120 2.5
2SC6096 120 2
2SC3647 120* 2
2SC5991 100 7
2SC5990 100 4
2SC5964 100 3
2SC5994 100 2

CES

*VCBO

[V]

I

[A]

C

TP Package

V

Type No.

2SC6071 120 10
2SD1816 120* 4
2SD1815 120* 3
2SC6098 120 2.5
2SC6099 120 2
2SC5980 100 8
2SC5979 100 5
2SC5707 80 8
2SC5706 80 5
2SC6022 40* 9
2SC6020 40* 6

CES

*VCBO

[V]

Monitor Size [inch] (Standard)

820 32

Set Size

[inch]

at least 32 15 to 24V

up to 15V

at least 32

TP Package

V

Type No.

DSS
[V]

2SK3978 200 4
2SK3977 100 4
SFT1202 180 2
SFT1201 150 2.5
SFT1305 45 10
SFT1307 45 14
SFT1405 45 10
SFT1407 45 14
SFT1403 35 11
SFT1402 35 14

SMP Package

V

I

[A]

C

Type No.

2SC5974 700 7
2SC5999 120 25
2SC5915 120 10

CES
[V]

I

[A]

V

IN

[V]

D

I

C

[A]

20

21

Devices for SW Power Supply

(4) Devices for Power MOSFET Buffer

1) Low Side Driver ExPD [MOSFET, IGBT Gate driver IC]

[Application]

• PDP, LCD-backlight, inverter light, liquid crystal projector, HID drive, motor drive, half-bridge/full-bridge power supply, etc.

[ExPD Use Example]

• Withstand voltage of 25V is assured.

• 2 low side drivers in

• TTL/CMOS compatible
(VIH=2.6V or less at VDD=4.5 to 25V)

• High-speed switching time
(tr/tf=typ 25ns, at 1000pF load [TND301S])

INA

OUTA

TND3xx

Control IC

INB OUTB

Load

(Inverter)

(Buffer)

MOSFET 1

Load

MOSFET 2

ExPDs

V

max

Type No. Package Functions

TND321VD
TND322VD Dual buffer 25 0.2 4.5 to 25 0.8 1 2.6 0.8

VEC8

Dual inverter 25 0.2 4.5 to 25 0.8 1 2.6 0.8

DD

[V]

PD max

[W]

Operating

voltage range

[V]

TND323VD Inverter buffer 25 0.2 4.5 to 25 0.8 1 2.6 0.8
TND307TD
TND308TD Dual buffer 25 0.25 4.5 to 25 1 1 2.6 0.8

TSSOP8

Dual inverter 25 0.25 4.5 to 25 1 1 2.6 0.8

TND309TD Inverter buffer 25 0.25 4.5 to 25 1 1 2.6 0.8
TND301S

Dual inverter 25 0.3 4.5 to 25 2 2 2.6 0.8
TND302S Dual buffer 25 0.3 4.5 to 25 2 2 2.6 0.8
TND303S Inverter buffer 25 0.3 4.5 to 25 2 2 2.6 0.8
TND304S Dual inverter 25 0.3 4.5 to 25 1 1 2.6 0.8
TND305S Dual buffer 25 0.3 4.5 to 25 1 1 2.6 0.8
TND306S Inverter buffer 25 0.3 4.5 to 25 1 1 2.6 0.8
TND311S Dual inverter 25 0.3 4.5 to 25 2 2 2.6 0.8

SOP8

TND312S Dual buffer 25 0.3 4.5 to 25 2 2 2.6 0.8
TND313S Inverter buffer 25 0.3 4.5 to 25 2 2 2.6 0.8
TND314S Dual inverter 25 0.3 4.5 to 25 1 1 2.6 0.8
TND315S Dual buffer 25 0.3 4.5 to 25 1 1 2.6 0.8
TND316S Inverter buffer 25 0.3 4.5 to 25 1 1 2.6 0.8

* TND30x series: input terminal Hi Z (high impedance); TND31x/TND32x series: input pull-down resistor in.

Drive capability

Source [A] Sink[A]

V

min

IH

[V]

V

IL

[V]

max

2) High Voltage Driver ExPD

[ExPD Use Example]

• High withstand voltage driver (600V)

• Under-voltage protection function is built in

ExPDs

V

Type No. Package

TND516SS

●

TND507S 600 250 500

SOP8

TND508S 600 250 500

TND512MD

●

TND505MD 600 250 500

MFP16

TND506MD 600 250 500

S

Source

[V]

[mA]

600 200 400 Single-phase high side driver

600 200 400 3-phase high side driver 3-phase motor drive applicatioon

HIN

L

SD

Control IC

LIN

I

O

Sink

[mA]

HOUT

MOSFET 1

TND506MD

VS

LOUT

Features Applications

MOSFET 2

Load

Ballasts, PDP maintenance drive, DC/AC
motor drive, induction heaters, charging

Single input/two output half bridge
driver circuits

Two input/output half bridge driver
circuits.
Built-in shutdown function and
low-side priority circuit.

Two input/output half bridge driver
circuits.
Built-in shutdown function.

circuits, high-frequency switching power
supplies, switching amplifi ers, and other
general-purpose driver applications

PDP maintenance drive, DC/AC motor
drive, ballasts, charging circuits,
high-frequency switching power supplies,
induction heaters, switching amplifi ers,
and other general-purpose driver
applications

22

23

Devices for SW Power Supply

3) LCD-Backlight Inverter: ExPD

[TND3xx Use Example: MOSFET Driver]

Half-Bridge MOSFET Full-Bridge MOSFET Push-Pull MOSFET

TND3xx

V

V

DD

TND3xx

GND

P1

N1

CCFL

DD

GND

TND3xx

V

DD

GND

P1

N1

CCFL

P2

N2

V

DD

TND3xx

GND

[TND3xx Use Example: High-side FET Drive, Various Applications]

12V Power Supply Variation 24V Power Supply Variation

24V 24V

TND3xx

12V

P1

N1

12V

TND3xx

P1

N1

TND3xx

N1

N2

P1

CCFL

5) Air conditioner fan motor drive: ExPD

[TND512MD Use Example]

VM

GND

V

CC

C1

1000μF

C3

10μF

Z3

DZD6.8

C2
104

1.1kΩ

470Ω

C6

682C5682C4682

C16
104

T1

UOUT

T2

C23
472

R8 R7 R9 R10 R11 R12 R4

C10

105

16

15 14 13 12 11 10 9

D1 D2

TND512MD

1

2 34567 8

D3

VOUT

C24

C11
105

C13

105

472

C17

T4

T4

C12 105

104

WOUT

C25
472

T5

T6

C18
104

GND

4) PDP Sustain Driver: ExPD

[TND5xx, TND3xx Use Example]

TND3XX

INA

OUTA

INB

OUTB

V

GND

DD

R5

R6

C0

Control IC

D2

D3

GND

TND5XX

HOUT

V

DD

HIN

SD

LIN

LOUT

VH

HFG

VL

GND

C3

D1

R3

R4

R1

R2

N

GND

12V

N1

1

23456789101112131415

LB11696V

CTL

2928272625242322212019181716

30

C19
104

C21
104

T1 to T6: 2SK2624
D1 to D3: DFD05TC

PDP Panel

Vp

Cp

R21

10kΩ

R22

100kΩ

R23

100kΩ

C8

104

C7

182

RD

C9

4.7μF

R24

20kΩ

PWMIN HP

J4 J5

F/R

J6 J7

R24

20kΩ

24

25

Devices for SW Power Supply

[Proposal]

1. Simplification of circuits

2. Common-ization of circuits

3. Helps reduce designing time

6) Bipolar Transistors: Separately-excited Inverter (MOSFET for Gate Drive)

[Bipolar Transistor Use Example]

• IC with large IC is recommended for driving large-capacitance MOSFET

• Composite type (PNP+NPN) is recommended for miniaturization purpose

Push-PullFull-Bridge

V

P

[W]

GND

C

DD

Buffer TR

Buffer TR

V

CE

[V]

N1

N2

Electrical characteristics/Ta=25˚C

h

FE

IC

min max

[A]

V

DD

Buffer TR

Buffer TR

V

GND

DD

Buffer TR

Buffer TR

GND

Bipolar Transistors

Type No. Package Polarity

MCH5541 MCPH5

MCH6542

MCPH6

MCH6545

CPH5541

CPH5506

CPH5516

CPH5518

CPH5524

CPH5

P1

P2

N2

N1

CCFL

Absolute maximum ratings/Ta=25˚C

V

CEO
[V]

I

[A]

I

C

CP
[A]

PNP 30 0.7 3 0.5 2 0.01 200 500 0.2 10 0.11 0.22
NPN 30 0.7 3 0.5 2 0.05 300 800 0.2 10 0.085 0.19
PNP 30 0.3 0.9 0.5 2 0.01 200 500 0.1 5 0.11 0.22
NPN 30 0.3 0.9 0.5 2 0.01 300 800 0.1 5 0.1 0.2
PNP 50 0.5 1 0.5 2 0.01 200 500 0.1 10 0.06 0.12
NPN 50 0.5 1 0.5 2 0.01 300 700 0.1 10 0.05 0.1
PNP 30 0.7 3 0.6 2 0.01 200 500 0.2 10 0.11 0.22
NPN 30 0.7 3 0.6 2 0.05 300 800 0.2 10 0.085 0.19
PNP 30 1.5 5 0.9 2 0.1 200 560 0.75 15 0.25 0.375
NPN 30 1.5 5 0.9 2 0.1 200 560 0.75 15 0.15 0.225
PNP 30 2 6 0.9 2 0.1 200 560 1.5 75 0.17 0.26
NPN 30 2 6 0.9 2 0.1 200 560 1.5 75 0.16 0.24
PNP 50 1 3 0.9 2 0.1 200 560 0.5 10 0.23 0.38
NPN 50 1 3 0.9 2 0.1 200 560 0.5 10 0.13 0.19
PNP 50 3 6 0.9 2 0.1 200 560 1 50 0.115 0.23
NPN 50 3 6 0.9 2 0.1 200 560 1 50 0.09 0.13

IC

[A]

CCFL

VCE (sat) [V]

IB

[mA]

Buffer Transistor Circuit

Buffer TR

Internal chip

equivalent

typ max

product

30A02MH

+30C02MH

30A01M

+30C01M

50A02CH

+50C02CH

30A02CH

+30C02CH

CPH3115

+CPH3215

CPH3144

+CPH3244

CPH3116

+CPH3216

CPH3123

+CPH3223

Electrical

connection

B14

B13

B13

B14

B14

B14

B14

B14

DC-DC Converter IC

■

TN8D41A/51A, TN5D41A/51A/61A: Separately-excited step-down switching regulator

[Functions/Features]

• Large current IO max 8A (TN8D41A/51A)
I

max 5A (TN5D41A/51A/61A)

O

• High effi ciency Vertical-type P-channel power MOSFET built-in

• High withstand voltage VIN max 57V

• Five external parts

Type No. Type Input voltage Output voltage/current Channels Power stage Package

• Built-in reference oscillator (150kHz)

• Built-in current limiter

• Built-in thermal shutdown circuit

• Built-in soft start circuit

• ON/OFF function (shared with soft start pin)

TN5D41A Step-down 10V to 40V 5V/5A 1ch Built-in (PMOS) TO-220FI5H-HB
TN8D41A Step-down 10V to 40V 5V/8A 1ch Built-in (PMOS) TO-220FI5H-HB
TN5D51A Step-down 20V to 48V 12V/5A 1ch Built-in (PMOS) TO-220FI5H-HB
TN8D51A Step-down 20V to 48V 12V/8A 1ch Built-in (PMOS) TO-220FI5H-HB
TN5D61A Step-down 30V to 48V 24V/5A 1ch Built-in (PMOS) TO-220FI5H-HB

[ExPD Use Example]

V

GND

V

IN

GND

1

Under Voltage

Protect

SS

5

SOFTSTART

2

Temperature

Protect

Band Gap

Over

OSC

Over Current

+

AMP

--

Protect

-­COMP

+

Pch MOSFET

SENSE

OUTPUT

IN

+

SW

OUT

3

FB

4

+

[Application Example for Power Supply Makers: Allows High Design Freedom]

ACIN

PFC

Control

24V Output

V

OUT

GND

B13 B14

C1 B2

E1 B1E2C2

C2

B2

C1

5/3.3V

Output

ACIN

[Proposal]

1. Simplification of circuits

2. Common-ization of circuits

PFC

Control

3. Helps reduce designing time

24V Output

B1EC

26

27

TN5D/8D

Series

5to8AOutput

5/3.3V

Output

Devices for Lighting

Inverter light

■

[Bipolar Transistor Use Example: Ball Lamp]

[MOSFET Use Example]

H

DB1

N

DB

R2

C2

Q1
NPN

C

+

C1

R

Q2
NPN

R

R

Bipolar Transistors

Absolute maximum ratings/Ta=25˚C

Type No. Package

TT2264

2SC6083A NPN 700 400 1 5 0.1 50 100 5 0.5

SPA

Polarity

V

CBO

[V]

V

CEO

[V]

I

[A]

C

NPN 700 400 0.3 5 0.03 50 100 5 0.15

TT2240NMP NMP NPN 700 400 1 1 0.1 15 30 5 0.5
TT2188
TT2146 NPN 500 400 8 5 0.8 20 50 5 4

TO-220

NPN 500 400 5 5 0.5 20 50 5 3

TT2196 NPN 500 400 12 5 1.2 20 50 5 6

Electrical characteristics/Ta=25˚C

1

h

FE

V

IC

CE

[V]

[A]

min max

V

CE

[V]

[MOSFET Use Example: Ball Lamp]

H

N

NFR1

C1

DB1

Q1

C4

+

C2

R4

ZD1 ZD2

C7

Q2

L1

Inductor

C5

hFE2

IC

[A]

Merit

at least 10 hFE of low current side is high

at least 10

at least 10
at least 10
at least 10
at least 10

C3R3 R2

hFE of low current side
is high, package is small

Package is small 20 to 60
tf=0.3μs 20 to 60
tf=0.3μs
tf=0.3μs

C5

C6

T1

L2

OUT1

OUT2

OUT3

OUT4

NTC1

PTC1

NTC2

power

up to 20

20 to 60

65 to 130

OUT1

OUT2

OUT3

OUT4

Set

[W]

D2

L1

D3

RD1006LS(600V/10A)

D4

Q2

V1
AC

for PFC circuit

+

+

C4C1

TND506

to

TND509

Control IC

Recommended Devices and Spec: Surface Mount Type

Recommended devices by inverter lighting set [AC=200V input]

Set output

(Fluorescent tube) [W]

32×2

40×2

86×2

PFC circuit Inverter circuit Remarks

2SK4136×2
2SK4181×2

2SK4137×2
2SK4182×2

2SK4138×2
2SK4183×2

2SK4136×2
2SK4181×2

2SK4136×2
2SK4181×2

2SK4138×2
2SK4183×2

525V device is recommended when a
larger margin is needed.

[ZP Package]

good surface radiation due to thin body

w

PD up better radiation than that of
SMP package. 10% PD up.

MOSFETs

Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C

P

Type No. Package

2SK4136

●

2SK4137 500 30 9.5 80 0.5 0.65 750

●

2SK4138 500 30 14 100 0.4 0.52 1000

●

2SK4181 525 30 7.5 70 0.71 0.92 600

●

2SK4182 525 30 9 80 0.58 0.75 750

●

2SK4183 525 30 13 100 0.45 0.58 1000

●

ZP

V

DSS
[V]

V

GSS
[V]

I

[A]

D

500 30 8 70 0.65 0.85 600

D

Tc=25˚C

[W]

RDS (on) [Ω]

VGS=10(15)V

typ max

Recommended Devices and Spec: Lead Type

Recommended devices by inverter lighting set [AC=200V input]

Set output

(Fluorescent tube) [W]

40×2 2SK4186LS 2SK4198LS×2

86×2 2SK4186LS×2 2SK4199LS×2

86×3 2SK4187LS×2 2SK4187LS×2

PFC circuit Inverter circuit Remarks

[TO-220FI(LS) Package]

C3

: New products

●

Ciss

[pF]

for Inverter circuit use
(2 devices are used)

Q3

L2

C2

Q4

8.2

7.8

6.2

0.4

0.2
3

4.2

1

2

1.0

2.54

5.08

10.0

6.0

2.5

10.0

1

.
6
1

3.6

Light

Light

0.6

8.4

10.0

1.2

1.0

2.54

6.2

5.2

3.2

3.5

7.2

16.0

0.9

1.2

0.75

14.0

0.7

0.3

0.6

7.8

4.5

2.8

0.6

1.2

0.7

MOSFETs

Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C

Type No. Package Polarity

2SJ281
2SK3979 Nch 200 30 6 20 0.32 0.45 - - 1090 18.2

●

PCP

V

DSS

[V]

V

GSS
[V]

I

[A]

D

P

[W]

D

VGS=10(15)V VGS=4(4.5)V

typ max typ max

Pch 250 30 3 30 1.5 2 - - 420 -

2SK1920 Nch 250 30 4 30 0.5 0.7 - - 420 -

28

RDS (on) [Ω]

Ciss
[pF]

: New products

●

Qg

[nC]

MOSFETs

Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C

I

Type No. Package

2SK4098LS

●

2SK4099LS 600 30 8.5 35 0.72 0.94 815 -

●

2SK4086LS 600 30 11.5* 37 0.58 0.75 1000 38.2

●

2SK4087LS 600 30 14* 40 0.47 0.61 1200 46

●

TO-220FI(LS)

V

V

DSS

GSS

[V]

[V]

600 30 7 33 0.9 1.1 660 -

D

IDc*

[A]

P

D

Tc=25˚C

[W]

RDS (on) [Ω]

VGS=10(15)V

typ max

●

Ciss

[pF]Qg[nC]

29

: New products

2.55

123

2.4

2.55

Devices for Lighting

Devices for Modem and Infrared Sensor

Emergency Lamp

■

[2SK4043LS Use Example]

FUSE

AC

T1

+

C1

Q2

Control IC

RS

+

Lamp

Q1

D9

MOSFETs

Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C

P

Type No. Package

2SK4043LS TO-220FI(LS) 30 10 20 20 0.016 0.021 0.017 0.024 3000 37

●

HID Lamp

■

V

DSS
[V]

V

GSS
[V]

I

[A]

D

D

Tc =2 5 ˚C

[W]

VGS=2.5V VGS=4V

typ max typ max

RDS (on) [Ω]

Ciss
[pF]

[MOSFET Use Example]

VL=15V

FUSE

Battery

: New products

●

[nC]

Qg

Devices for Modem

■

[High-Voltage Transistor Use Example for MODEM Circuit]

High-voltage TR

TIP

Modular Jack

RING

Safety

&

Protection

High-voltage TR

High-voltage

Modem

Controller

TR

Transistors for Modem Circuit

Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C

Type No. Package Polarity

V

CEO
[V]

I

[A]

C

P

[W]

C

FE

min max

f

T

typ

[MHz]

h

2SA1740 PCP PNP 400 0.2 1.3 60 200 70 50 5 0.8
2SA1699 NP PNP 400 0.2 0.6 60 200 70 50 5 0.8
2SA1785 NMP PNP 400 1 1 40 200 50 200 20 1
CPH3249A CPH NPN 400 1 0.6 50 100 20 10 100 0.8

●

2SC4548 PCP NPN 400 0.2 1.3 60 200 70 50 5 0.6
2SC4002 NP NPN 400 0.2 0.5 60 200 70 50 5 0.6

SOP8501 SOP8

*1: When mounted on ceramic substrate (250mm2×0.8mm)

PNP 400 1 1.3 40 200 70 0.2 20 1
NPN 400 0.2 1.3 60 200 70 0.05 5 0.6

IC

[mA]

VCE (sat) [V]

IB

[mA]

: New products

●

max

FRD

V

H

V

L

HOUT

TND507S
TND508S

IN

SD

GND

HFG

LOUT

GND

VCCReset

DISC OUT

Thre

Trig

LB8555
Timer IC

GND

MOSFETs

Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C

P

Type No. Package

2SK4136 ZP 500 30 8 70 0.65 0.85 600 -

●

2SK2617ALS

●

2SK2618ALS 500 30 6.5 30 0.95 1.25 700 20

●

2SK2625ALS 600 30 5 30 1.5 2 700 20

●

2SK4098LS 600 30 7 33 0.9 1.1 660 -

●

TO-220FI(LS)

V

DSS
[V]

V

GSS
[V]

I
[A]

D

500 30 5 25 1.2 1.6 550 15

D

Tc=25˚C

[W]

RDS (on) [Ω]

VGS=10(15)V

typ max

Ciss

[pF]

: New products

●

Qg

[nC]

Devices for infrared sensor

■

[Junction FET Use Example]

Optical lens

Signal
(Infrared rays etc.)

Thermal energy

+

-

+

­R

-

+

D

1

Sensor

2

S

G

3

Amplifier Comparator

Junction FET

Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C

V

Type No. Package

EC3A04B ECSP1006-3B 30 30 10 100 0.6 3 5 4 1.1

●

V

DSX

[V]

V

GDS
GDO

[V]

I

D

[mA]

P

D

[mW]

I

DSS

[mA]

min max

|yfs|

typ

[mS]

Ciss

typ

[pF]

Output

Crss

typ

[pF]

Typical Applications

humanbody detection, temp.
detection, automatic switching, etc.

: New products

●

30

31

Devices for Satellite/GPS

FM Transmitter

Satellite LNB

■

[Satellite LNB]

Frequency: 9 to 14GHz

RF IN

IF Amp.LNA.

MIX

IF OUT

Lo

LO

Ultrahigh-Frequency Transistors

Absolute maximum ratings/Ta=25˚C

f

Type No. Package

MCH4009
MCH4011 3.5 100 350 24 2 1.1 2 3 50 14.5 Lo/IF Amp.
MCH4012 3.5 200 500 20 2 1.0 2 3 100 12 Lo/IF Amp.

MCPH4

V

CEO
[V]

I

C

[mA]

P

C

[mW]

3.5 40 120 25 2 1.1 2 3 20 17 Lo/IF Amp.

T

typ

[GHz]

MCH4020 8 150 500 16.5 2 1.2 1 5 50 17.5 Lo/IF Amp.

High-Frequency Schottky Barrier Diodes

Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C

Type No. Package

SBX201C CP 2 50 - 280 8.6 0.25 Mixer

●

GPS/XM Antenna Module

■

V
[V]

R

I

F

[mA]

P

[mW]

Electrical characteristics/Ta=25˚C

NF |S21e|

f

typ

[GHz]

V

[mV]

F

[dB]f[GHz]

Conversion Loss

[dB]

2

V

CE

[V]

I

C

[mA]

C

typ [pF]

typ

[dB]

: New products

●

[GPS/XM Antenna Module]

Frequency: 1.57 to 2.3GHz

RF IN

ANTENNA

MODULE

LNA.

ESD

LNA.

NAVIGATION

SECTION

IF Amp.MIX

IF
OUT

Lo

LO

High-Frequency Transistors

Absolute maximum ratings/Ta=25˚C

f

Type No. Package

MCH4009
MCH4011 3.5 100 350 24 2 1.1 2 3 50 14.5 LNA
MCH4012 3.5 200 500 20 2 1.0 2 3 100 12 LNA

MCPH4

V

CEO
[V]

I

C

[mA]

P

C

[mW]

3.5 40 120 25 2 1.1 2 3 20 17 LNA

T

typ

[GHz]

MCH4013 3.5 15 120 22.5 2 1.5 2 5 5 16 LNA
EC4H08C
EC4H09C 3.5 40 120 26 2 1.3 2 3 20 16.5 LNA

ECSP1008

3.5 15 50 24 2 1.5 2 3 10 17 LNA

Electrical characteristics/Ta=25˚C

NF |S21e|

f

typ

[GHz]

[dB]f[GHz]

2

V

CE

[V]

I

C

[mA]

typ

[dB]

Block

Block

Block

FM Transmitter

■

[Varactor Diode Use Example]

VCC=+14.4V (From cigarette Lighter in a car)

V_Reg

f_Ref

CONT.

3LN02M✕5

AS

CLK

DATA

ATT

PON

RF OUT

V

DD

LV2282VA

VCO

3.3V

Varactor Diode

Absolute maximum

ratings/Ta=25˚C

Type No. Package

V
[V]

R

V
[V]

R

C1 C2

min max

EC2C01C ECSP1008-2 15 1 18.5 21.5 4 3.5 4.5 5.0
SVC710 MCPH3 15 1 18.5 21.5 4 3.5 4.8 4.8
SVC707 SPA 15 1 18.58 21.26 4 3.61 4.73 3.0

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.

SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.

In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.

Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.

Electrical characteristics/Ta=25˚C

V

R

[V]

min max

∆Cm [%]

C1.0V/C4.0V

max

32

33

Ordering number : EP124

SANYO Semiconductor Co.,Ltd. Website

http://www.semic.sanyo.co.jp/index_e.htm

This catalog provides information as of June, 2008.
Specifications and information herein are subject to change without notice.

SANYO Semiconductor Co., Ltd.