Sanyo EC3H09B Specifications

Ordering number : ENN7269

EC3H09B

NPN Epitaxial Planar Silicon Transistor

EC3H09B

High-Frequency Low-Noise Amplifier

and OSC Applications

Features

•

Low noise : NF=1.5dB typ (f=2GHz).

• High cut-off frequency : f

=6.5GHz typ (VCE=1V).

T

: fT=11.2GHz typ (VCE=3V).

• Low operating voltage.

• Ultraminiature (1006 size) and thin (0.5mm) leadless

package.

Specifications

Package Dimensions

unit : mm

2183

[EC3H09B]

0.35

0.2

0.15

2

0.05

3

0.05

0.5

0.5

0.6

0.65

0.25

0.25

0.15

0.05

1

0.4

0.05

(Bottom view)

1.0

1 : Base
2 : Emitter
3 : Collector

SANYO : E-CSP1006

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to- Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

C

9V
4V
2V

70 mA

100 mW

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

Gain-Bandwidth Product
Output Capacitance Cob VCB=1V, f=1MHz 0.95 1.2 pF

Reverse Transfer Capacitance Cre VCB=1V, f=1MHz 0.7 0.9 pF

Marking : J Continued on next page.

CBO
EBO

FE

fT1VCE=1V, IC=5mA 5 6.5 GHz
fT2VCE=3V, IC=30mA 9.5 11.2 GHz

VCB=5V, IE=0 1.0 µA
VEB=1V, IC=0 10 µA
VCE=1V, IC=5mA 100 160

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

72502 TS IM TA-100021

No.7269-1/7

EC3H09B

This product adopts a
high-frequency process.
Please be careful when
handling it beause it is
susceptible to static
electricity.

Continued from preceding page.

Parameter Symbol Conditions

2

S21e

1VCE=1V, IC=5mA, f=2GHz 5 6 dB



Forward Transfer Gain
Noise Figure NF VCE=1V, IC=5mA, f=2GHz 1.5 2.3 dB



2

S21e

2VCE=3V, IC=30mA, f=2GHz 7.0 8.5 dB





Electrical Connection (Top view)

Polarity mark (Top)

Base

Collector

Emitter

Base

*Electrodes : Bottom

I

50

40

C -- VCE

0.30mA

0.25mA

-- mA
C

30

20

Collector Current, I

10

0

012345

0.20mA

Collector-to-Emitter Voltage, VCE -- V

h

FE -- IC

V

=3V

CE

FE

1000

7
5

3

2

1V

100

DC Current Gain, h

7
5

3

357

1.0

23 57

10

Collector Current, IC -- mA

10

7
5

Cob -- V

CB

Polarity mark (Top)

Emitter

0.15mA

0.10mA

0.05mA

23 57

f=1MHz f=1MHz

Collector

70

60

50

-- mA
C

40

30

20

Collector Current, I

10

IB=0

IT04818 IT04819

0

0 0.2 0.4 0.6 0.8 1.0 1.2

Base-to-Emitter V oltage, VBE -- V

3

2

-- GHz
T

10

7

5

3

2

Gain-Bandwidth Product, f

100

IT04820 IT04821

1.0

1.0

10

7
5

23 57

Collector Current, IC -- mA

Ratings

min typ max

I

C -- VBE

=3V

CE

V

fT -- I

C

=3V

V

CE

1V

23 57

10

Cre -- V

CB

1V

Unit

100

1.0

Output Capacitance, Cob -- pF

0.1

3
2

7
5

3
2

3
2

1.0
7
5

3
2

Reverse Transfer Capacitance, Cre -- pF

0.1

23 57

1.0

Collector-to-Base Voltage, V

23 57

V

CB --

IT04822 IT04823

0.1

10

0.1

23 57

1.0

Collector-to-Base Voltage, V

23 57

V

CB --

10

No.7269-2/7

EC3H09B

16

14

-- dB

2

12

10

8

6

4

Forward Transfer Gain, S21e

2

1.0

5.0

VCE=1V

4.5

f=2GHz

4.0

dB

3.5

--

3.0

2.5

2.0

1.5

Noise Figure, NF

1.0

0.5
0

1.0

120

S21e2 -- I

23 57

Collector Current, IC -- mA

10

NF -- I

23 57

Collector Current, IC -- mA

10

P

-- Ta

C

C

=3V

V

CE

1V

23 57

C

Zs=50Ω

Zsopt

23 57

f=1GHz

2

-- dB

12

10

8

6

4

2

S21e2 -- I

C

f=2GHz

=3V

V

CE

1V

Forward Transfer Gain, S21e

100

IT04824 IT04825

100

IT04826

0

1.0

5.0

4.5

4.0

dB

3.5

--

3.0

2.5

2.0

1.5

Noise Figure, NF

1.0

0.5
0

1.0

23 57

10

Collector Current, IC -- mA

NF -- I

23 57

Collector Current, IC -- mA

10

23 57

C

VCE=3V
f=2GHz

Zs=50Ω

Zsopt

23 57

100

100

IT04827

100

-- mW

80

C

60

40

20

Collector Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

IT04828

No.7269-3/7