Sanyo EC3H07B Specifications

Ordering number : ENN6578

EC3H07B

NPN Epitaxial Planar Silicon Transistor

EC3H07B

UHF to S Band Low-Noise Amplifier

and OSC Applications

Features

•

Low noise : NF=1.5dB typ (f=2GHz).

• High cut-off frequency : f

• Low operating voltage.

• High gain : S21e

• Ultraminiature (1006 size) and thin (0.5mm) leadless

2

=10GHz typ (VCE=1V).

T

: fT=12.5GHz typ (VCE=3V).

=9.5dB typ (f=2GHz).

Package Dimensions

unit : mm

2183

0.05

0.25

0.35

0.2

0.15

1

[EC3H07B]

0.15

2

package.

3

0.5

0.6

0.05

0.05

0.5

0.4

0.65

0.25

0.05

(Bottom View)

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to- Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage Temperature T stg --55 to +150 °C

CBO
CEO
EBO

C

C

1.0

1 : Base
2 : Emitter
3 : Collector

SANYO : E-CSP1006-3

9V
4V
2V

30 mA

100 mW

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

Gain-Bandwidth Product
Output Capacitance Cob VCB=1V, f=1MHz 0.55 0.7 pF

Reverse Transfer Capacitance Cre VCB=1V, f=1MHz 0.4 pF
Forward Transfer Gain
Noise Figure NF VCE=1V, IC=3mA, f=2GHz 1.5 2.3 dB

CBO
EBO

FE

fT1VCE=1V, IC=5mA 8 10 GHz
fT2VCE=3V, IC=15mA 12.5 GHz

S21e



S21e



VCB=5V, IE=0 1.0 µA
VEB=1V, IC=0 10 µA
VCE=1V, IC=5mA 100 160

2

1VCE=1V, IC=5mA, f=2GHz 8 9.5 dB



2

2VCE=3V, IC=15mA, f=2GHz 10.5 dB



Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

72100 TS IM TA-2555

No.6578-1/6

Unit

EC3H07B

Type No. Indication (Top view) Electrical Connection (Top view)

Polarity mark (Top)

G

This product adopts a
high-frequency process.
Please be careful when
handling it beause it is
susceptible to static
electricity.

10

8

-- mA
C

6

4

Collector Current, I

2

0

0

1000

7
5

3

FE

2

100

7
5

DC Current Gain, h

3
2

10

357

1.0

7

1

Collector-to-Emitter Voltage, VCE -- V

1.0

I

C -- VCE

0.05mA

0.04mA

0.03mA

0.02mA

0.01mA

IB=0

32

h

FE -- IC

V

=3V

CE

1V

3

2

7

5

10 100

Collector Current, IC -- mA

Cob -- V

CB

2

4

3

f=1MHz

IT02240

5

IT02242

Base

Emitter

Base

5

7

Polarity mark (Top)

Emitter

Collector

*Electrodes : on the bottom

Collector

30

20

-- mA
C

10

Collector Current, I

0

0.2 0.4 0.6 0.8 1.0 1.2

0

Base-to-Emitter V oltage, VBE -- V

100

7
5

3

-- GHz
T

2

10

7
5

3
2

Gain-Bandwidth Product, f

1.0

1.0

2

3

Collector Current, IC -- mA

1.0

7

I

C -- VBE

fT -- I

=3V

V

CE

1V

57

10

Cre -- V

1V

=3V

CE

V

C

2357

CB

IT02241

100

IT02243

f=1MHz

Output Capacitance, Cob -- pF

0.1

5

3

2

5

3

2

Reverse Transfer Capacitance, Cre -- pF

0.1

2

5

3

7

1.0

Collector-to-Base Voltage, V

2

CB --

5

3

7

10

IT02244

V

0.1

0.1

2 3 57 2 3 57

Collector-to-Base Voltage, V

1.0

CB --

IT02245

V

10

No.6578-2/6