Sanyo DL-3149-054 Specifications
Ordering number : EN5867A
DL-3149-054 |
Red Laser Diode |
DL-3149-054
Index Guided AlGaInP Laser Diode
Overview
DL-3149-054 is 670 nm (Typ.) index guided AlGaInP laser diode with low threshold current and high operating temperature. The low threshold current and high operating temperature are achieved by the use of a strained multiple quantum well active layer. DL-3149-054 is suitable for applications such as bar-code scanners, laser pointers and other optical information systems.
Features
•Short wavelength |
: 670 nm (Typ.) |
•High operating temperature |
: 5 mW at 60°C |
•Low threshold current |
: Ith = 30 mA (Typ.) |
•Small package |
: 5.6 mmØ |
Absolute Maximum Ratings at Tc=25°C
Parameter |
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Symbol |
Ratings |
Unit |
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Light Output |
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Po |
5 |
mW |
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Reverse Voltage |
Laser |
VR |
2 |
V |
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PIN |
30 |
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Operating Temperature |
Topr |
---10 to +60 |
°C |
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Storage Temperature |
Tstg |
---40 to +85 |
°C |
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Electrical and Optical Characteristics at Tc=25°C
Package Dimensions
0 |
Tolerance : ±0.2 |
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ø5.6--0.025 |
Unit |
: mm |
ø4.4
ø3.55 ±0.1
ø1.6
Effective window diameter 1.0min.
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1 |
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3 |
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2 |
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Top view |
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1.0±0.1 |
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0.4±0.1 |
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0.25 |
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LD facet |
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1.27±0.08 |
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1.2±0.1 |
3.5±0.5 |
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0.5max. |
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3–ø 0.45±0.1 |
±1.06.5 |
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ø1.4max. |
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Pin No. |
1 |
2 |
3 |
ø2.0 |
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5.6mm ø stem
Electrical Connection
1 |
3 |
LD |
PD |
2
– power supply system
Parameter |
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Symbol |
Condition |
Min. |
Typ. |
Max. |
Unit |
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Threshold Current |
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Ith |
CW |
-- |
30 |
50 |
mA |
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Operating Current |
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Iop |
Po=5mW |
-- |
45 |
60 |
mA |
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Operating Voltage |
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Vop |
Po=5mW |
-- |
2.3 |
2.6 |
V |
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Lasing Wavelength |
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λ p |
Po=5mW |
660 |
670 |
680 |
nm |
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Beam ) |
Perpendicular |
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θ |
Po=5mW |
25 |
33 |
40 |
deg. |
Divergence |
Parallel |
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θ // |
Po=5mW |
6 |
8 |
10 |
deg. |
Off Axis |
Perpendicular |
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θ |
-- |
-- |
-- |
±3 |
deg. |
Angle |
Parallel |
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θ // |
-- |
-- |
-- |
±3 |
deg. |
Differential Efficiency |
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dPo/dIop |
-- |
0.15 |
0.3 |
-- |
mW/mA |
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Monitoring Output Current |
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Im |
Po=5mW |
0.4 |
1.2 |
2.0 |
mA |
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Astigmatism |
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As |
Po=5mW |
-- |
8 |
-- |
μm |
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) Full angle at half maximum |
note : The above product specifications are subject to change without notice. |
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SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2798 GI / N2897 GI, (IM) No.5867 1/3
DL-3149-054
Characteristics
Output power vs. Forward current
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6 |
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(mW) |
5 |
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25°C |
60°C |
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Po |
4 |
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power |
3 |
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2 |
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Output |
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1 |
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0 |
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60 |
80 |
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0 |
20 |
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100 |
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Forward current IF (mA)
Monitor current vs. Output power
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1.4 |
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(mA) |
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1.2 |
Tc=25°C |
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Vr(PD)=5V |
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Im |
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1.0 |
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current |
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0.8 |
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Monitor |
0.6 |
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0.4 |
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0.2 |
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0 |
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0 |
1 |
2 |
3 |
4 |
5 |
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Output power Po (mW) |
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Lasing wavelength vs. Temperature
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678 |
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(nm) |
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Po=5mW |
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λp |
676 |
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wavelength |
674 |
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Lasing |
672 |
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670 |
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668 |
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0 |
10 |
20 |
30 |
40 |
50 |
60 |
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Temperature Tc (°C)
Threshold current vs. Temperature
(mA) |
100 |
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80 |
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Ith |
60 |
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current |
40 |
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Threshold |
20 |
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10 |
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70 |
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0 |
10 |
20 |
30 |
40 |
50 |
60 |
Temperature Tc (°C)
Beam divergence
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1.0 |
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Po=5mW |
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0.8 |
Tc=25°C |
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intensity |
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θ |
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0.6 |
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Relative |
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0.4 |
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θ // |
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0.2 |
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0 
-40 -30 -20 -10 0 10 20 30 40
Angle θ (deg.)
Output power vs. Lasing wavelength
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Po=5mW |
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Tc=25°C |
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intensity |
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Po=3mW |
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Relative |
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Po=1mW |
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666 |
668 |
670 |
672 |
674 |
676 |
Lasing wavelength λp (nm)
No.5867 2/3
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