Sanyo DL-3148-033 Specifications

Ordering number : EN5860A

DL-3148-033

Red Laser Diode

DL-3148-033

Index Guided AlGaInP Laser Diode

Overview

The DL-3148-033 is index guided 635 nm (Typ.) AlGaInP laser diode with low threshold current and high operating temperature. The low threshold current and short wavelength are achieved by a strained multiple quantum well active layer. The lasing wavelength is 635nm which is 8 times brighter than that of 670nm lasers. The DL-3148-033 is suitable for applications such as bar-code scanners, laser printer, and other optical information systems.

Features

•Short wavelength	: 635 nm (Typ.)
•Low threshold current	: Ith = 40 mA (Typ.)
•High operating temperature	: 5 mW at 50°C
•Small package	: 5.6 mmØ

Absolute Maximum Ratings at Tc=25°C

	Parameter		Symbol	Ratings	Unit
	Light Output		Po	5	mW
	Reverse Voltage	Laser	VR	2	V
		PIN		30
	Operating Temperature		Topr	---10 to +50	°C
	Storage Temperature		Tstg	---40 to +85	°C

Electrical and Optical Characteristics at Tc=25°C

Package Dimensions

0	Tolerance : ±0.2
ø5.6 – 0.025	Unit	: mm

ø4.4

ø3.55 ±0.1

ø1.6

Effective window diameter 1.0min.

		1			3
			2		Top view
				1.0±0.1
					0.4±0.1
	0.25				LD facet
1.27±0.08					1.2±0.1	3.5±0.5
0.5max.					3–ø0.45 ±0.1	±1.06.5
					ø1.4max.
Pin No.		1	2	3	ø2.0

5.6mm ø stem

Electrical Connection

1	3
LD	PD

2

– power supply system

Parameter			Symbol	Condition	Min.	Typ.	Max.	Unit
Threshold Current			Ith	CW	--	40	60	mA
Operating Current			Iop	Po=5mW	--	55	75	mA
Operating Voltage			Vop	Po=5mW	--	2.2	2.4	V
Lasing Wavelength			λ p	Po=5mW	--	635	640	nm
Beam )	Perpendicular		θ	Po=5mW	25	35	40	deg.
Divergence	Parallel		θ //	Po=5mW	6	8	10	deg.
Off Axis	Perpendicular		θ	--	--	--	±3	deg.
Angle	Parallel		θ //	--	--	--	±3	deg.
Differential Efficiency			dPo/dIop	--	--	0.4	--	mW/mA
Monitoring Output Current			Im	Po=5mW	0.1	0.2	0.5	mA
Astigmatism			As	Po=5mW	--	8	--	μm
) Full angle at half maximum		note : The above product specifications are subject to change without notice.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N2798 GI / N2897 GI, (IM) No.5860 1/3

DL-3148-033

Characteristics

Output power vs. Forward current

	6
(mW)	5			25°C			40°C		50°C
Po	4
power	3
Output	2
	1
	0		40		60			80
	0	20								100

Forward current IF (mA)

		Monitor current vs. Output power
	0.5
(mA)Im			Tc=25°C
	0.4		Vr(PD)=5V
current	0.3
	0.2
Monitor
	0.1
	0
	0	1		2		3	4

Output power Po (mW)

Lasing wavelength vs. Temperature

	645
(nm)pλ
		Po=5mW
wavelength	640
	635
Lasing

630
0	10	20	30	40	50

Temperature Tc (°C)

Threshold current vs. Temperature

(mA)	100
	80
Ith	60
current	40
Threshold	20
	10
	0	10	20	30	40	50	60

Temperature Tc (°C)

		Beam divergence
	1.0
		Po=5mW
	0.8	Tc=25°C
intensity				θ
	0.6
Relative
	0.4		θ //
	0.2

0 -40 -30 -20 -10 0 10 20 30 40

Angle θ (deg.)

Output power vs. Lasing wavelength

		Po=5mW		Tc=25°C
intensity
		Po=3mW
Relative
	Po=1mW
630	632	634	636	638	640

Lasing wavelength λp (nm)

No.5860 2/3