Sanyo DL-3147-261 Specifications
Ordering number : EN5864A
DL-3147-161(-261) |
Red Laser Diode |
DL-3147-161(-261)
Index Guided AlGaInP Laser Diode
Overview
DL-3147-161(-261) is index guided 650 nm (Typ.) AlGaInP laser diode with low threshold current and high operating temperature. The low threshold current and high operating temperature are achieved by a strained multiple quantum well active layer. DL-3147-161(-261) is suitable for applications such as optical disc systems (DVD-ROM) and other optical information systems.
Features
•Short wavelength |
: 650 nm (Typ.) |
•Low threshold current |
: Ith = 45 mA (Typ.) |
•High operating temperature |
: 5 mW at 70°C |
•TE mode°C |
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Absolute Maximum Ratings at Tc=25°C
Parameter |
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Symbol |
Ratings |
Unit |
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Light Output |
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Po |
7 |
mW |
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Reverse Voltage |
Laser |
VR |
2 |
V |
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PIN |
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30 |
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Operating Temperature |
Topr |
--10 to +70 |
°C |
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Storage Temperature |
Tstg |
--40 to +85 |
°C |
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Electrical and Optical Characteristics at Tc=25°C
Package Dimensions
0 |
Tolerance : ±0.2 |
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ø5.6--0.025 |
Unit |
: mm |
ø 4.4
ø3.55 ±0.1
ø1.6
Effective window diameter 1.0min.
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1 |
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3 |
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2 |
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Top view |
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1.0±0.1 |
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0.4±0.1 |
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0.25 |
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LD facet |
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1.27±0.08 |
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1.2±0.1 |
3.5±0.5 |
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0.5max. |
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3–ø 0.45±0.1 |
±1.06.5 |
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ø1.4max. |
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Pin No. |
1 |
2 |
3 |
ø2.0 |
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5.6mm ø |
stem |
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Electrical Connection
1 |
3 |
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1 |
3 |
LD |
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PD |
LD |
PD |
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2 |
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2 |
2 power supply system + power supply system
-161 |
-261 |
Parameter |
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Symbol |
Condition |
Min. |
Typ. |
Max. |
Unit |
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Threshold Current |
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Ith |
CW |
-- |
45 |
65 |
mA |
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Operating Current |
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Iop |
Po=5mW |
-- |
60 |
80 |
mA |
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Operating Voltage |
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Vop |
Po=5mW |
-- |
2.2 |
2.5 |
V |
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Lasing Wavelength |
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λ p |
Po=5mW |
-- |
650 |
660 |
nm |
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Beam ) |
Perpendicular |
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θ |
Po=5mW |
25 |
30 |
40 |
deg. |
Divergence |
Parallel |
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θ // |
Po=5mW |
6 |
7.5 |
10 |
deg. |
Off Axis |
Perpendicular |
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θ |
-- |
-- |
-- |
±3 |
deg. |
Angle |
Parallel |
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θ // |
-- |
-- |
-- |
±2 |
deg. |
Differential Efficiency |
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dPo/dIop |
-- |
0.15 |
0.35 |
-- |
mW/mA |
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Monitoring Output Current |
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Im |
Po=5mW |
0.05 |
0.15 |
0.5 |
mA |
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Astigmatism |
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As |
Po=5mW |
-- |
8 |
-- |
μm |
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) Full angle at half maximum |
note : The above product specifications are subject to change without notice. |
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SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2798 GI / N2897 GI, (IM) No.5864 1/3
DL-3147-161(-261)
Characteristics
Output power vs. Forward current
6 
(mW) |
5 |
25°C |
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60°C 70°C |
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Po |
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4 |
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power |
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3 |
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Output |
2 |
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1 |
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0 |
50 |
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100 |
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0 |
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150 |
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Forward current IF (mA)
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Monitor current vs. Output power |
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0.5 |
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(mA)Im |
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Tc=25°C |
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0.4 |
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Vr(PD)=5V |
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current |
0.3 |
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0.2 |
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Monitor |
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0.1 |
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0 |
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0 |
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1 |
2 |
3 |
4 |
5 |
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Output power Po (mW) |
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Lasing wavelength vs. Temperature |
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(nm)p |
665 |
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Po=5mW |
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λ |
660 |
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wavelength |
655 |
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Lasing |
650 |
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645 |
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0 |
10 |
20 |
30 |
40 |
50 |
70 |
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Temperature Tc (°C)
Threshold current vs. Temperature
(mA) |
100 |
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80 |
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Ith |
60 |
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current |
40 |
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Threshold |
20 |
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10 |
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60 |
70 |
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0 |
10 |
20 |
30 |
40 |
50 |
Temperature Tc (°C)
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Beam divergence |
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1.0 |
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Po=5mW |
θ |
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intensity |
0.8 |
Tc=25°C |
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0.6 |
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Relative |
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0.4 
θ //
0.2 
0 
-40 -30 -20 -10 0 10 20 30 40
Angle θ (deg.)
Output power vs. Lasing wavelength
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Po=5mW |
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Tc=25°C |
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intensity |
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Po=3mW |
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Relative |
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Po=1mW |
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646 |
648 |
650 |
652 |
654 |
656 |
Lasing wavelength λp (nm)
No.5864 2/3
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