Ordering number:EN1334C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1319/2SC3332
High-Voltage Switching Applications
Features
· Hgih breakdown voltage.
· Excellent h linearity.
FE
·Wide ASO and highly resistant to breakdown.
·Adoption of MBIT process.
Switching Test Circuit
Package Dimensions
unit:mm
2003A
[2SA1319/2SC3332]
JEDEC : TO-92
(For PNP, the polarity is reversed)
EIAJ : SC-43
Unit (resistance : Ω, capacitance : F)
SANYO : NP
( ) : 2SA1319
B : Base
C : Collector
E : Emitter
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
(–)180 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
(–)160 |
V |
Emitter-to-Base Voltage |
VEBO |
|
(–)6 |
V |
Collector Current |
IC |
|
(–)0.7 |
A |
Collector Current (Pulse) |
ICP |
|
(–)1.5 |
A |
Collector Dissipation |
PC |
|
700 |
mW |
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
|
|
|
|
|
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
VCB=(–)120V, IE=0 |
|
|
(–)0.1 |
µA |
Emitter Cutoff Current |
IEBO |
VEB=(–)4V, IC=0 |
|
|
(–)0.1 |
µA |
DC Current Gain |
hFE1 |
VCE=(–)5V, IC=(–)100mA |
100* |
|
400* |
|
|
hFE2 |
VCE=(–)5V, IC=(–)10mA |
80 |
|
|
|
Gain Bandwidth Product |
fT |
VCE=(–)10V, IC=(–)50mA |
|
120 |
|
MHz |
Common Base Output Capacitance |
Cob |
VCB=(–)10V |
|
(11)8 |
|
pF |
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(–)250mA, IB=(–)25mA |
|
(0.20) |
(0.5) |
V |
|
|
|
|
0.12 |
0.4 |
|
Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=(–)250mA, IB=(–)25mA |
|
(–)0.85 |
(–)1.2 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(–)10µA, IE=0 |
(–)180 |
|
|
V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(–)1mA, RBE=∞ |
(–)160 |
|
|
V |
Emitter-to-Base Breakdown Voltage |
V(BR)EBO |
IE=(–)10µA, IC=0 |
(–)6 |
|
|
V |
Turn-ON Time |
ton |
See specified Test Circuit |
|
(60)50 |
|
ns |
Storage Time |
tstg |
See specified Test Circuit |
|
(900) |
|
ns |
|
|
|
|
1000 |
|
|
Fall Time |
tf |
See specified Test Circuit |
|
(60)60 |
|
ns |
* : The 2SA1319/2SC3332 are classified by 100mA hFE as follows :
100 R 200 140 S 280 200 T 400
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3207KI/N257KI/3135KI/O183KI, TS No.1334-1/3
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