SAMSUNG SGH-E820 Schematic Block Diagram
5. SGH-E820 Block Diagrams
1. RF Solution Block Diagram
HITACHI METAL ANT S/W
ESHS-C090T
Imax = 8 mA
Freq (MHz) Loss
880 - 915 1.28 dB
925 - 960 0.8 dB
1710 -1785 1.6 dB
1805 -1880 0.97 dB
Atten 2xfo : 43dB,26dB(GSM,DCS)
3xfo : 40dB,20dB(GSM,DCS)
FUJITSU EGSM RX SAW Filter
FAR-F5EB-942M50-B28CH (2.0X1.4)
IL=1.5dB typ 2.1dB max
Ripple=0.6dB typ 1.2dB max
Pins IA,IB,QA and QB
VIQ : 1.25Vtyp. , 1.15Vmin, 1.35Vmax
Vmod : 0.5Vpp
+
I OUT
-
I OUT
EGSM_MODE_SW
DCS_MODE_SW
VCC_RX_TX
Vc_EGSM
Vc_DCS
Inverter circuits
PANASONIC DCS RX SAW Filter
Vcc_Tx_BURST
EFCH1842TCA7 (2.0X1.4)
IL=1.8dB typ 2.5dB max
Ripple=0.6dB typ 1.5dB max
Vcc_RF_LO
Vcc_RF_VCO
GSM/DCS/PCS
Discrete
3rd Order
Loop Filter
fc = ? kHz
OFFSET Mixer input power
-16dBm max, -22dBm min
~
~
GSM S/W
DCS S/W
FESW1
FESW2
CP
VREG
~
QUAD
DIV
FracN
DIV
CP
PFD
DIV
QUAD
fTXIF
60/114MHz
PFD
Philips Transceiver
UAA3536
fcompRF =26MHz
I+
I-
Q+
Q-
fmod
VREG
1:1/
2
3W
BUS
CTL
REG
PWR
EN
100 kHz+fmod
+
Q OUT
-
Q OUT
Vcc_SYN
Vcc_REF(2.4V typ.)
REFIN
26MHz
DATA
CLK
EN
RXON
TXON
SYNON
FESWON
VC-TCXO
GSM
VAPC
DCS/PCS
VBAT
Micro Devices Quadband PAM
RF3146 (7 X 7)
GSM: Pout = 35.0 dBm Eff = 60%
DCS: Pout= 33.0 dBm Eff = 55%
?㉥???TX VCO
VOG1810F27KRA (5.7X5.0X1.5)
GSM = 880 ~ 915MHz
(Vt=0.5V ~ 3.0V )
kV = 55+-11 MHz/V Typ
DCS = 1710 ~ 1785MHz
(Vt=0.5V ~ 3.0V )
kV = 115+-23 MHz/V Typ
Pout= 6.5+-3 dBm typ.,Ic <= 30mA
Harmonics <= -10dBc
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VCC_SYN (2.7V , 100mA )
VCC_RX_TX (2.7V ,100mA )
VCC_RF_VCO
VCC_TX_BURST
(2.7V , 100mA )
(2.7V , 100mA )
VCC_CP (4.0V , 25mA )
5-1
VBat (3.6V typ 3.0V min)
RF1_VDD
RF2_VDD
RF1_VDDS
RF2_VDDS
HVS
PMU
VDD1 (1.35V min 2.95V max , 150mA )
VDD2 (1.35V min 3.45V max , 150mA )
VDD3 (1.35V min 3.45V max , 100mA )
VDD4 (1.35V min 3.45V max , 150mA )
PON_TX
PON_SYNT
V_MODE
AVDD(1.35V min 2.65V max , 100mA )
Block Diagrams
2. Base Band Solution Block Diagram
MIC
SPK
VIBRATOR
MELODY IC (64POLY)
SYSTEM CLOCK (13MHz)
OM6359
BB interface
Serial Data
Interface
I/O
Interface
A/D
Interface
Battery Type
Battery Voltage
Battery Temperature
VCC_CP
VCC_SYN
VCC_RX_TX
VCC_RF_VCO
VCC_TX_BURST
VDD1
FLASH
(NOR 128M bit
NAND 256M bit)
SRAM (64M bit)
CAMERA
MV317SAQ
LCD
LI-ION Battery
(Standard)
Charging
Circuit
RF interface
RTC_CLOCK
(32.768Khz)
AFC
RAMP
PMU
VDD2
VDD3
VDD_KEY
MIC_BIAS
VIBVDD
SENSOR_VDD
MV317_VDD
LCD_VDD
AVDD_TEMP
SIMCARD
AVDD
KEY_PAD
5-2
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This Document can not be used without Samsung's authorization
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