Samsung MZ-76E960E User Manual

Improve your read-intensive, data-streaming data center: Read this.

860 DCT 2.5" Solid State Drives

960 GB	MZ-76E960E
1920 GB (1.9 TB)	MZ-76E1T9E
3840 GB (3.8 TB)	MZ-76E3T8E

Advanced 2.5" SSD designed for readintensive, data-streaming data centers.

You can easily increase the performance, value and reliability of your read-intensive, data-streaming data centers. Simply use Samsung 860

DCTSeriesSSD.Specificallyengineeredforlong-lastingperformance, they’re designed to meet and exceed the unique requirements of all types of read-intensive, data-streaming data centers. With our groundbreaking V-NAND technology, best-in-class TBW levels, and a reinforced controller, they’re the right drive for the right job.

Key Features

Data Center SSDs, Advanced V-NAND

Keep your business running 24/7. Attain optimal performance, value and reliability with advanced Samsung V-NAND technology SSDs. They’re producedin-housetostringentstandardsandaredesignedspecifically to enhance your read-intensive, data-streaming data center.

Optimal Read-Intensive Performance

Give speed to your business presence. Boost performance with faster sequential and random read speeds. They’re ideal for all types of readintensive, data-streaming data centers, including content delivery network systems.

EnhancedOperationsEfficiency

Accomplishfarmorewithless.Achievehigherefficiencyandperformance compared to legacy storage systems, with fewer servers, reduced power andcooling,andlowerTCO.Maintenanceismoreefficient,too,withthe provided Samsung SSD Toolkit software.

Samsung Quality and Reliability

Keep going with less downtime. In-house production utilizing our own Samsung-built components allows us greater quality control and manufacturing efficiencies, to produce SSDs of superiorqualityand reliability. Empoweryourbusinessto runfaster, more efficiently, and with the reduced costs that come from world-class dependability.

Contact Us: samsung.com/b2bssd

Samsung 860 DCT 2.5"

Solid State Drives

	Usage Application
	Capacity1
	Dimensions (WxHxD)
	Interface
	Form Factor
	Controller
	NAND Flash Memory
	DRAM Cache Memory
		4KB Sequential Read (Max.)
	Performance2	4KB Sequential Write (Max.)
		4KB Random Read (QD32) (Max.)
		4KB Random Write (QD32) (Max.)
	Weight (Max.)
	Reliability (MTBF)
	TBW3
	Power	Active Read/Write (Max.)
	Consumption4	Idle (Max.)
	Supporting Features
		Operating
	Temperature5	Non-Operating
	Humidity
	Vibration (Non-Operating)
	Shock (Non-Operating)6
	Limited Warranty7

MZ-76E960E

Data Center

960 GB

3.94" x 2.75" x 0.27"

SATA 6 Gb/s (Compatible with SATA 3 Gb/s and SATA 1.5 Gb/s)

2.5"

Samsung MJX Controller

Samsung V-NAND 3-bit MLC

Samsung 1 GB LPDDR4 SDRAM

550 MB/s

520 MB/s

98,000 IOPS

19,000 IOPS

60 g.

1.5 Million Hours

349 TBW

2.02 W / 2.95 W

1.05 W

TRIM Support, Garbage Collection, S.M.A.R.T., AES 256-bit Encryption (Class 0), WWN Support

32˚~158˚F(0˚C~70˚C)

-49˚~185˚F(-40˚Cto85˚C)

5% to 95%, Non-Condensing

20~2000Hz,20G

1500G, Duration 0.5 m/sec, Half-Sine

3 Years or 349 TBW

MZ-76E1T9E

Data Center

1920 GB (1.9 TB)

3.94" x 2.75" x 0.27"

SATA 6 Gb/s (Compatible with SATA 3 Gb/s and SATA 1.5 Gb/s)

2.5"

Samsung MJX Controller

Samsung V-NAND 3-bit MLC

Samsung 2 GB LPDDR4 SDRAM

550 MB/s

520 MB/s

98,000 IOPS

19,000 IOPS

60 g.

1.5 Million Hours

698 TBW

2.02 W / 2.95 W

1.05 W

TRIM Support, Garbage Collection, S.M.A.R.T., AES 256-bit Encryption (Class 0), WWN Support

32˚~158˚F(0˚C~70˚C) -49˚~185˚F(-40˚Cto85˚C)

5% to 95%, Non-Condensing

20~2000Hz,20G

1500G, Duration 0.5 m/sec, Half-Sine

3 Years or 698 TBW

MZ-76E3T8E

Data Center

3840 GB (3.8 TB)

3.94" x 2.75" x 0.27"

SATA 6 Gb/s (Compatible with SATA 3 Gb/s and SATA 1.5 Gb/s)

2.5"

Samsung MJX Controller

Samsung V-NAND 3-bit MLC

Samsung 4 GB LPDDR4 SDRAM

550 MB/s

520 MB/s

98,000 IOPS

19,000 IOPS

60 g.

1.5 Million Hours

1,396 TBW

2.02 W / 2.95 W

1.05 W

TRIM Support, Garbage Collection, S.M.A.R.T., AES 256-bit Encryption (Class 0), WWN Support

32˚~158˚F(0˚C~70˚C) -49˚~185˚F(-40˚Cto85˚C)

5% to 95%, Non-Condensing

20~2000Hz,20G

1500G, Duration 0.5 m/sec, Half-Sine

3 Years or1,396 TBW

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©2018 Samsung Electronics America, Inc. Samsung and 860 DCT are registered marks of Samsung Electronics Corp., Ltd. Specifications and design are subject to change without notice. Non-metric weights and measurements are approximate. Simulated screen images. All brand, product, service names and logos are trademarks and/or registered trademarks of their respective manufacturers and companies. See samsung.com for detailed information. Printed in USA. SSD-860DCTDSHT-OCT18T

11 GB=1,000,000,000 bytes, unformatted capacity. User accessible capacity may vary depending on operating environment and formatting. 2Performance measured using FIO 2.18 with queue depth 32, Z170 Intel SATA 6G port. Measurements are performed on entire LBA range. Write cache enabled. Performance varies depending on capacity. 3All documented endurance test results are obtained in compliance with JESD218 standards. Please visit jedec.org for detailed information on JESD218 standards. 4Power consumption measured using FIO 2.14 with Z270 Intel SATA 6G port, CentOS 7.2, Kernel 3.10.0/327, CPU (Intel® Core™ i7-6700K CPU @ 4.20 GHz) and 16 GB RAM. Active Read power is measured on 4KB random read. Active Write power is measured on 128 KB sequential write. Idle power is measured with DIPM off. 5Operating temperature is measured by SSD temperature sensor (SMART Attribute 194). Proper airflow recommended. 6Internal free fall shock test conducted under controlled conditions. 7Warranty 3 years or TBW, whichever comes first. For more information on the warranty, please find the warranty statement enclosed in the package.