Samsung MZ-75E250RW User Manual

Samsung SSD 850 EVO

Data Sheet, Rev.3 (May, 2016)

Summary

- SATA 6Gb/s SSD for Client PCs

- 2.5 inch form factor

- Samsung V-NAND 3bit MLC

- Samsung Magician Software for SSD

management

- Samsung Data Migration Software

V-NAND Technology and THE
SAMSUNG SSD 850 EVO

Samsung’s unique and innovative V-NAND
flash memory architecture is a breakthrough
in overcoming the density limitations,
performance and endurance of today’s
conventional planar NAND architecture. V­NAND is fabricated by stacking cell layers
vertically over one another rather than
decreasing the cells dimensions and trying
to fit itself onto a fixed horizontal space
resulting in higher density and better
performance utilizing a smaller footprint.

The 850 EVO is the advanced consumer

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SSD powered by V-NAND technology that
maximizes everyday computing experiences
with optimized performance and enhanced
reliability.

Optimized performance for
everyday computing
experiences

Powered by Samsung's cutting-edge V-NAND
technology, 850 EVO delivers top-class
sequential and random read and write
performance to optimize everyday computing.
With improved performance thanks to
TurboWrite technology the 850 EVO provides
not only more than a 10% better user
experience than 840 EVO but up to 1.9x faster
random write speeds for the 120/250 GB
models as well. In fact, the 850 EVO delivers
top class sequential read (540 MB/s) and write
(520 MB/s) performance in all capacities. This
comes with optimized random read and write
performance on all QD and improved QD1 and
QD2 random performance for Client PC usage.

DATA SHEET
Rev. 3, May, 2016

Reinforcement of TurboWrite
Technology

In the early stages of the 840 EVO, Samsung
adopted sequential write performance first.
With TurboWrite, write speeds are significantly
accelerated during data transfers by creating a
high-performance write buffer in the SSD. If a
consecutive write operation (i.e. no idle time)
exceeds the size of the buffer, the transfer will
exit TurboWrite and be processed at ”After
TurboWrite” speeds. Once the buffer is cleared,
TurboWrite performance will resume. However,
the buffer size for TurboWrite is more than
sufficient for everyday PC use, and you should
experience accelerated speeds for most
workloads.

For the 850 EVO, enhanced TurboWrite
technology applied to random write speeds up
to 1.9x faster for the 120 GB model and 1.25x
faster for the 250GB model over the 840 EVO.

Guaranteed endurance and
reliability for maximum use

Guaranteed endurance

The 850 EVO delivers guaranteed endurance
and reliability by doubling the Tera bytes
Written(TBW) compared to the previous
generation 840 EVO backed by an industry
leading 5 year warranty.

With twice the endurance of a typical NAND
flash SSD, the 850 EVO will keep working as
long as you do. The 850 EVO guarantees a 5
year limited warranty or 75TBW for 120GB,
250GB, 150TBW for 500GB, 1TB and 300TBW
for 2TB and 4TB.

Enhanced reliability with improved
sustained performance

With enhanced reliability through improved
sustained performance, the 850 EVO assures
long-term dependable performance up to 30%
longer than the 840 EVO with minimized
performance degradation. This means you can
use it every day when taking care of work or
entertaining yourself knowing it will keep
performing even with heavy daily workloads
over the years.

Advanced data encryption

The 850 EVO provides the same data
encryption feature as the 840 EVO does. Self­Encrypting Drive (SED) security technology
will help keep data safe at all times. It includes
an AES 256-bit hardware-based encryption
engine to ensure that your personal files
remain secure. Being hardware-based, the
encryption engine secures your data without
performance degradation that you may
experience with a software-based encryption.
Also, 850 EVO is compliant with advanced
security management solutions (TCG Opal and
IEEE 1667). Magician will guide ”How to use
security features”. Furthermore, you can erase
or initialize data with the crypto erase service
with PSID.

Efficient power management
for all PC applications

Power consumption affects everyone. You
actually save of up to 50% more on power than
with the 840 EVO during write operations
thanks to V-NAND consuming half the power
of 2D planar NAND.

Plus, whether it’s preserving battery life for
longer cordless use or just saving on costs,
power management is important. Device sleep
signals the SSD to enter a low power state
which is vital for ultra-books and other battery
powered devices. With 850 EVO’s Device Sleep
at a highly efficient 2mW you get longer
battery life on your notebook thanks to a
controller optimized for V-NAND. With the 850
EVO you can work and play longer without
having to plug in.

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DATA SHEET
Rev. 3, May, 2016

Technical Specifications

Usage Application Client PCs

Capacity 120GB, 250GB, 500GB, 1TB(1,000GB), 2TB(2,000GB), 4TB(4,000GB)

Samsung SSD 850 EVO

Dimensions (LxWxH)

100 x 69.85 x 6.8 (mm)

Interface SATA 6Gb/s (compatible with SATA 3Gb/s and SATA 1.5Gb/s)

Form Factor 2.5 inch

Samsung MGX controller(120GB, 250GB, 500GB & 1TB)

Controller

Samsung MHX controller (2TB & 4TB)

NAND Flash Memory Samsung V-NAND 3bit MLC

256MB(120GB) or 512MB(250GB&500GB) or

DRAM Cache Memory

1GB(1TB) or 2GB(2TB) or 4GB(4TB) LPDDR3 DRAM Cache Memory

Sequential Read: Max. 540 MB/s

Sequential Write**: Max. 520 MB/s

4KB Random Read (QD1): Max. 10,000 IOPS

4KB Random Write(QD1):

Performance*

4KB Random Read(QD32):

Max. 40,000 IOPS(250GB/500GB/1TB/2TB/4TB)
Max. 38,000 IOPS(120GB)
Max. 98,000 IOPS(500GB/1TB/2TB/4TB)
Max. 97,000 IOPS(250GB)
Max. 94,000 IOPS(120GB)

4KB Random Write(QD32):

Max. 90,000 IOPS(500GB/1TB/2TB/4TB)
Max. 88,000 IOPS(120GB/250GB)

Data Security AES 256-bit Full Disk Encryption, TCG/Opal V2.0, Encrypted Drive(IEEE1667)

Weight Max. 55g

Reliability MTBF: 1.5 million hours

120/250GB: 75TBW

TBW

500GB/1TB: 150TBW

2TB/4TB: 300 TBW

Active Read/Write (Average): Max. 3.1W(4TB) / Max. 3.6W(4TB)

Power Consumption***

Idle: Max. 70mW(4TB)
Device Sleep(Typ.): 2mW(120/250/500GB), 4mW(1TB), 5mW(2TB), 10mW(4TB)

Supporting features

Temperature

TRIM(Required OS support), Garbage Collection, S.M.A.R.T

Operating:
Non-Operating:

0°C to 70°C

-40°C to 85°C

Humidity 5% to 95%, non-condensing

Vibration Non-Operating: 20~2000Hz, 20G

Shock Non-Operating:

1500G , duration 0.5m sec, 3 axis

Warranty 5 years limited

* Sequential performance measurements based on CrystalDiskMark v.3.0.1. Random performance measurements based on Iometer1.1.0

Performance may vary based on SSD’s firmware version, system hardware & configuration.
Test system configuration : Intel Core i7-4790K @ 4.0GHz, DDR3 1600MHz 8GB, OS – Windows7 Ultimate x64 SP1, IRST 13.0.3.1001,
Chipset : Intel® Z97PRO

** Sequential Write performance measurements based on TurboWrite technology. , The sequential write performances after TurboWrite

region are 150MB/s(120GB), 300MB/s(250GB) and 500MB/s(500GB/1TB).

*** Power consumption measured with IOmeter 1.1.0 with Intel i7-4770K, DDR3 8GB, Intel®DH87RL OS- Windows7 Ultimate x64 SP1

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DATA SHEET
Rev. 3, May, 2016

Product Lineup

Density

120 GB MZ-75E120

250 GB MZ-75E250

500 GB MZ-75E500

1TB(1,000GB) MZ-75E1T0

2TB(2,000GB) MZ-75E2T0

4TB(4,000GB) MZ-75E4T0

Model Name

Samsung SSD 850 EVO 120GB
Warranty statement
Installation guide
Software CD

Samsung SSD 850 EVO 250GB
Warranty statement
Installation guide
Software CD

Samsung SSD 850 EVO 500GB
Warranty statement
Installation guide
Software CD

Samsung SSD 850 EVO 1TB
Warranty statement
Installation guide
Software CD

Samsung SSD 850 EVO 2TB
Warranty statement
Installation guide
Software CD

Samsung SSD 850 EVO 4TB
Warranty statement
Installation guide
Software CD

For more information, please visit

www.samsung.com/ssd
www.samsungssd.com.

To download the latest software & manuals,
please visit www.samsung.com/samsungssd

DISCLAIMER

SAMSUNG ELECTRONICS RESERVES THE RIGHT TO
CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for
reference purposes only. All information discussed
herein may change without notice and is provided on
an “AS IS” basis, without warranties of any kind. This
document and all information discussed herein
remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask
work, trademark or any other intellectual property
right is granted by one party to the other party under
this document, by implication, estoppels or
otherwise. Samsung products are not intended for
use in life support, critical care, medical, safety
equipment, or similar applications where product
failure could result in loss of life or

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and

Box Contents Model Code

MZ-75E120BW

MZ-75E120B/AM

MZ-75E120B/EU
MZ-75E120B/KR
MZ-75E120B/CN

MZ-75E250BW
MZ-75E250B/AM
MZ-75E250B/EU
MZ-75E250B/KR
MZ-75E250B/CN

MZ-75E500BW

MZ-75E500B/AM

MZ-75E500B/EU
MZ-75E500B/KR
MZ-75E500B/CN

MZ-75E1T0BW
MZ-75E1T0B/AM

MZ-75E1T0B/EU
MZ-75E1T0B/KR
MZ-75E1T0B/CN

MZ-75E2T0BW

MZ-75E2T0B/AM

MZ-75E2T0B/EU

MZ-75E2T0B/KR

MZ-75E2T0B/CN

MZ-75E4T0BW

MZ-75E4T0B/AM

MZ-75E4T0B/EU
MZ-75E4T0B/KR
MZ-75E4T0B/CN

personal or physical harm, or any military or defense
application, or any governmental procurement to
which special terms or provisions may apply. For
updates or additional information about Samsung
products, contact your nearest Samsung office.

COPYRIGHT © 2016

This material is copyrighted by Samsung Electronics.
Any unauthorized reproductions, use or disclosure of
this material, or any part thereof, is strictly
prohibited and is a violation under copyright law.

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Incorporated. All other company and product names
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which they are associated.

DATA SHEET
Rev. 3, May, 2016