Samsung KM684000CLTI-7L, KM684000CLTI-5L, KM684000CLT-7L, KM684000CLT-5L, KM684000CLRI-7L Datasheet
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KM684000C Family
Document Title
512Kx8 bit Low Power CMOS Static RAM
Revision History
CMOS SRAM
Revision No.
0.0
1.0
History
Initial draft
Finalize
Draft Date
October 20,1998
April 12, 1999
Remark
Preliminary
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
April 1999
KM684000C Family
512Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
FEATURES
• Process Technology: TFT
• Organization: 512Kx8
• Power Supply Voltage: 4.5~5.5V
• Low Data Retention Voltage: 2V(Min)
• Three state output and TTL Compatible
• Package Type: 32-DIP-600, 32-SOP-525,
32-TSOP2-400F/R
GENERAL DESCRIPTION
The KM684000C families are fabricated by SAMSUNG′s
advanced CMOS process technology. The families support
various operating temperature ranges and various package
types for user flexibility of system design. The family also
support low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product Family Operating Temperature Vcc Range Speed
KM684000CL
KM684000CL-L 20µA
KM684000CLI
Commercial (0~70°C)
Inderstrial (-40~85°C)
4.5~5.5V
551)/70ns
KM684000CLI-L 30µA
1. The parameter is measured with 50pF test load.
PIN DESCRIPTION
A18
A16
A14
A12
I/O1
I/O2
I/O3
VSS
A7
A6
A5
A4
A3
A2
A1
A0
1
2
3
4
5
6
32-DIP
7
32-SOP
8
32-TSOP2
9
(Forward)
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VCC
A15
A17
WE
A13
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
A8
27
A9
26
32-TSOP2
25
(Reverse)
24
23
22
21
20
19
18
17
1
A18
A16
2
A14
3
A12
4
5
6
7
8
9
10
11
12
13
14
15
VSS
16
FUNCTIONAL BLOCK DIAGRAM
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Standby
(ISB1, Max)
80µA
100µA
I/O1 Data
I/O8
Clk gen.
(ICC2, Max)
Row
select
cont
Data
cont
Operating
55mA
PKG Type
32-DIP,32-SOP
32-TSOP2-F/R
32-SOP
32-TSOP2-F/R
Precharge circuit.
Memory array
1024 rows
512×8 columns
I/O Circuit
Column select
Pin Name Function
WE Write Enable Input
CS Chip Select Input
OE Output Enable Input
A0~A18 Address Inputs
CS
WE
OE
Control
logic
I/O1~I/O8 Data Inputs/Outputs
Vcc Power
Vss Ground
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 1.0
April 1999
KM684000C Family
PRODUCT LIST
Commercial Temperature Products(0~70°C) Industrial Temperature Products(-40~85°C)
Part Name Function Part Name Function
KM684000CLP-5
KM684000CLP-5L
KM684000CLP-7
KM684000CLP-7L
32-DIP, 55ns, Low Power
32-DIP, 55ns, Low Low Power
32-DIP, 70ns, Low Power
32-DIP, 70ns, Low Low Power
KM684000CLGI-5
KM684000CLGI-5L
KM684000CLGI-7
KM684000CLGI-7L
32-SOP, 55ns, Low Power
32-SOP, 55ns, Low Low Power
32-SOP, 70ns, Low Power
32-SOP, 70ns, Low Low Power
CMOS SRAM
KM684000CLG-5
KM684000CLG-5L
KM684000CLG-7
KM684000CLG-7L
KM684000CLT-5L
KM684000CLT-7L
KM684000CLR-5L
KM684000CLR-7L
32-SOP, 55ns, Low Power
32-SOP, 55ns, Low Low Power
32-SOP, 70ns, Low Power
32-SOP, 70ns, Low Low Power
32-TSOP2-F, 55ns, Low Low Power
32-TSOP2-F, 70ns, Low Low Power
32-TSOP2-R, 55ns, Low Low Power
32-TSOP2-R, 70ns, Low Low Power
KM684000CLTI-5L
KM684000CLTI-7L
KM684000CLRI-5L
KM684000CLRI-7L
32-TSOP2-F, 55ns, Low Low Power
32-TSOP2-F, 70ns, Low Low Power
32-TSOP2-R, 55ns, Low Low Power
32-TSOP2-R, 70ns, Low Low Power
FUNCTIONAL DESCRIPTION
CS OE WE I/O Pin Mode Power
H
L H H High-Z Output disbaled Active
L L H Dout Read Active
L
1. X means don′t care.( Must be in low or high state.)
1)
X
1)
X
ABSOLUTE MAXIMUM RATINGS
Item Symbol Ratings Unit Remark
Voltage on any pin relative to Vss VIN,VOUT -0.5 to 7.0 V Voltage on Vcc supply relative to Vss VCC -0.5 to 7.0 V Power Dissipation PD 1.0 W Storage temperature TSTG -65 to 150 °C -
Operating Temperature TA
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
1)
X
L Din Write Active
1)
High-Z Deselected Standby
0 to 70 °C KM684000CL/L-L
-40 to 85 °C KM684000CLI/LI-L
3
Revision 1.0
April 1999
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