Samsung KM48S16030BT-G-FL, KM48S16030BT-G-FH, KM48S16030BT-G-FA, KM48S16030BT-G-F8, KM48S16030BT-G-F10 Datasheet
KM48S16030B CMOS SDRAM
128Mbit SDRAM
4M x 8Bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 0.1
June 1999
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.1 Jun. 1999
KM48S16030B CMOS SDRAM
Revision History
Revision 0.0 (May 15, 1999)
• Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER.
• Skip ICC4 value of CL=2 in DC characteristics in datasheet.
• Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.
• Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE.
• Symbol Change Notice
Before After
IIL Input leakage current (inputs)
IIL Input leakage current (I/O pins)
I
OL
Output open @ DC characteristic table Io Output open @ DC characteristic table
• Test Condition in DC CHARACTERISTIC Change Notice
Symbol Before After
I
CC2P , ICC3P
I
CC2N , ICC3N
I
CC4
CKE ≤ VIL(max), tCC = 15ns CKE ≤ VIL(max), tCC = 10ns
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns
2 Banks activated 4 Banks activated
I
LI
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
Input leakage current
Revision 0.1 (Jun 28, 1999)
• Added Notes @OPERATING AC PARAMETER
Notes : 5. For -8/H/L, tRDL=1CLK and tDAL=1CLK+20ns is also supported .
SAMSUNG recommands tRDL=2CLK and tDAL=2CLK + 20ns.
• Added -10 bining product.
Rev. 0.1 Jun. 1999
KM48S16030B CMOS SDRAM
4M x 8Bit x 4 Banks Synchronous DRAM
GENERAL DESCRIPTIONFEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system
clock.
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
FUNCTIONAL BLOCK DIAGRAM
The KM48S16030B is 134,217,728 bits synchronous high data
rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits,
fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the
use of system clock I/O transactions are possible on every clock
cycle. Range of operating frequencies, programmable burst
length and programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance memory system applications.
ORDERING INFORMATION
Part No. Max Freq. Interface Package
KM48S16030BT-G/FA 133MHz(CL=3)
KM48S16030BT-G/F8 125MHz(CL=3)
KM48S16030BT-G/FH 100MHz(CL=2)
KM48S16030BT-G/FL 100MHz(CL=3)
KM48S16030BT-G/F10 66MHz(CL=2 &3)
LVTTL
54
TSOP(II)
CLK
ADD
Data Input Register
Bank Select
Refresh Counter
Row Buffer
Address Register
LRAS
LCBR
LCKE
LRAS LCBR LWE LDQM
CLK CKE CS RAS CAS WE DQM
Row Decoder Col. Buffer
Latency & Burst Length
Programming Register
LCAS LWCBR
Timing Register
4M x 8
4M x 8
4M x 8
4M x 8
Column Decoder
LWE
LDQM
Sense AMP
Output BufferI/O Control
DQi
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.1 Jun. 1999
KM48S16030B CMOS SDRAM
PIN CONFIGURATION (Top view)
VDD
A10/AP
PIN FUNCTION DESCRIPTION
DQ0
VDDQ
N.C
DQ1
VSSQ
N.C
DQ2
VDDQ
N.C
DQ3
VSSQ
N.C
VDD
N.C
WE
CAS
RAS
CS
BA0
BA1
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
VSS
DQ7
VSSQ
N.C
DQ6
VDDQ
N.C
DQ5
VSSQ
N.C
DQ4
VDDQ
N.C
VSS
N.C/RFU
DQM
CLK
CKE
N.C
A11
A9
A8
A7
A6
A5
A4
VSS
54Pin TSOP (II)
(400mil x 875mil)
(0.8 mm Pin pitch)
Pin Name Input Function
CLK System clock Active on the positive going edge to sample all inputs.
CS Chip select
CKE Clock enable
A0 ~ A11 Address
BA0 ~ BA1 Bank select address
RAS Row address strobe
CAS Column address strobe
WE Write enable
DQM Data input/output mask
DQ0 ~ 7 Data input/output Data inputs/outputs are multiplexed on the same pins.
VDD/VSS Power supply/ground Power and ground for the input buffers and the core logic.
VDDQ/VSSQ Data output power/ground
N.C/RFU
No connection
/reserved for future use
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA11, Column address : CA0 ~ CA9
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when DQM active.
Isolated power supply and ground for the output buffers to provide improved noise
immunity.
This pin is recommended to be left No Connection on the device.
Rev. 0.1 Jun. 1999
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