SAMSUNG K6X4016T3F Technical data
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K6X4016T3F Family CMOS SRAM
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No
0.0
0.1
1.0
History
Initial draft
Revised
- Added Commercial product
- Deleted 44-TSOP2-400R Package Type.
- Added 55ns product(@ 3.0V~3.6V)
Finalized
Revised
- Changed ICC(Operating power supply current) from 4mA to 2mA
- Changed ICC1(Average operating current) from 4mA to 3mA
- Changed ICC2(Average operating current) from 40mA to 25mA
- Changed ISB1(Standby Current(CMOS), Commercial)
from 15µA to 10µA
- Changed ISB1(Standby Current(CMOS), Industrial)
from 20µA to 10µA
- Changed ISB1(Standby Current(CMOS), Automotive)
from 30µA to 20µA
- Changed IDR(Data retention current, Commercial)
from 15µA to 10µA
- Changed IDR(Data retention current, Industrial)
from 20µA to 10µA
- Changed IDR(Data retention current, Automotive)
from 30µA to 20µA
Draft Date
July 29, 2002
December 2, 2002
August 8, 2003
Remark
Preliminary
Preliminary
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
August 2003
K6X4016T3F Family CMOS SRAM
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
• Process Technology: Full CMOS
• Organization: 256K x16
• Power Supply Voltage: 2.7~3.6V
• Low Data Retention Voltage: 2V(Min)
• Three State Outputs
• Package Type: 44-TSOP2-400F
GENERAL DESCRIPTION
The K6X4016T3F families are fabricated by SAMSUNG′s
advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also
support low data retention voltage for battery back-up operation
with low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range Speed(ns)
(ISB1, Max)
K6X4016T3F-B Commercial(0~70°C)
K6X4016T3F-F Industrial(-40~85°C) 10µA
2.7~3.6V
K6X4016T3F-Q Automotive(-40~125°C)
1. This parameter is measured with 30pF test load (Vcc=3.0~3.6V).
2. The parameter is measured with 30pF test load.
PIN DESCRIPTION
A4
1
A3
2
A2
3
A1
4
A0
5
CS
6
I/OI
7
I/O2
8
I/O3
9
10
I/O4
Vcc
11
44-TSOP2
12
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
13
14
15
16
17
18
19
20
21
22
Forward
Name Function Name Function
CS Chip Select Input Vcc Power
OE Output Enable Input Vss Ground
WE Write Enable Input LB Lower Byte (I/O1~8)
A0~A17 Address Inputs UB Upper Byte (I/O9~16)
I/O1~I/O16 Data Input/Output NC No Connection
44
A5
43
A6
42
A7
41
OE
40
UB
39
LB
38
I/O16
37
I/O15
36
I/O14
I/O13
35
Vss
34
Vcc
33
I/O12
32
I/O11
31
I/O10
30
I/O9
29
NC
28
A8
27
A9
26
A10
25
A11
24
A12
23
551)/702)/85ns
702)/85ns
FUNCTIONAL BLOCK DIAGRAM
Row
Addresses
I/O1~I/O8
I/O9~I/O16
WE
OE
Control
UB
logic
LB
CS
Power Dissipation
Standby
Operating
(ICC2, Max)
10µA
20µA
Clk gen.
Row
select
Data
cont
Data
cont
Data
cont
PKG Type
25mA 44-TSOP2-400F
Precharge circuit.
Vcc
Vss
Memory array
I/O Circuit
Column select
Column Addresses
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 1.0
August 2003
K6X4016T3F Family CMOS SRAM
PRODUCT LIST
Commercial Products(0~70°C) Industrial Products(-40~85°C) Automotive Products(-40~125°C)
Part Name Function Part Name Function Part Name Function
1)
K6X4016T3F-TB55
K6X4016T3F-TB70
K6X4016T3F-TB85
1. Operating voltage range is 3.0~3.6V
44-TSOP2-F, 55ns, LL
44-TSOP2-F, 70ns, LL
44-TSOP2-F, 85ns, LL
K6X4016T3F-TF55
K6X4016T3F-TF70
K6X4016T3F-TF85
FUNCTIONAL DESCRIPTION
CS OE WE LB UB I/O1~8 I/O9~16 Mode Power
H
1)
X
L H H
L
1)
X
L L H L H Dout High-Z Lower Byte Read Active
L L H H L High-Z Dout Upper Byte Read Active
L L H L L Dout Dout Word Read Active
L
L
L
1. X means don′t care. (Must be in low or high state)
1)
X
1)
X
1)
X
1)
X
1)
X
1)
X
1)
X
1)
X
1)
X
H H High-Z High-Z Output Disabled Active
L L H Din High-Z Lower Byte Write Active
L H L High-Z Din Upper Byte Write Active
L L L Din Din Word Write Active
1)
44-TSOP2-F, 55ns, LL
44-TSOP2-F, 70ns, LL
44-TSOP2-F, 85ns, LL
K6X4016T3F-TQ70
K6X4016T3F-TQ85
44-TSOP2-F, 70ns, L
44-TSOP2-F, 85ns, L
High-Z High-Z Deselected Standby
High-Z High-Z Output Disabled Active
ABSOLUTE MAXIMUM RATINGS
1)
Item Symbol Ratings Unit Remark
Voltage on any pin relative to Vss VIN,VOUT -0.2 to VCC+0.3(max. 3.9V) V Voltage on Vcc supply relative to Vss VCC -0.2 to 3.9 V Power Dissipation PD 1.0 W Storage temperature TSTG -65 to 150 °C -
Operating Temperature TA
0 to 70
-40 to 85 K6X4016T3F-F
°C
K6X4016T3F-B
-40 to 125 K6X4016T3F-Q
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3
Revision 1.0
August 2003
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