Samsung K6T4008C1C-GL70, K6T4008C1C-GL55, K6T4008C1C-GF70, K6T4008C1C-GF55, K6T4008C1C-GB70 Datasheet

K6T4008C1C Family

Document Title

512Kx8 bit Low Power CMOS Static RAM

Revision History

CMOS SRAM

Revision No.

0.0

1.0

History

Initial draft

Finalize

Draft Date

October 20,1998

April 12, 1999

Remark

Preliminary

Final

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

1

Revision 1.0

April 1999

K6T4008C1C Family

512Kx8 bit Low Power CMOS Static RAM

CMOS SRAM

FEATURES

• Process Technology: TFT

• Organization: 512Kx8

• Power Supply Voltage: 4.5~5.5V

• Low Data Retention Voltage: 2V(Min)

• Three state output and TTL Compatible

• Package Type: 32-DIP-600, 32-SOP-525,

32-TSOP2-400F/R

GENERAL DESCRIPTION

The K6T4008C1C families are fabricated by SAMSUNG′s
advanced CMOS process technology. The families support
various operating temperature ranges and various package
types for user flexibility of system design. The family also
support low data retention voltage for battery back-up oper­ation with low data retention current.

PRODUCT FAMILY

Power Dissipation

Product Family Operating Temperature Vcc Range Speed

K6T4008C1C-L
K6T4008C1C-B 20µA
K6T4008C1C-P

Commercial (0~70°C)

Inderstrial (-40~85°C)

4.5~5.5V

551)/70ns

K6T4008C1C-F 30µA

1. The parameter is measured with 50pF test load.

PIN DESCRIPTION

A18
A16
A14
A12

I/O1
I/O2
I/O3
VSS

A7
A6
A5
A4
A3
A2
A1
A0

1

2

3

4

5

6

32-DIP

7

32-SOP

8

32-TSOP2

9

(Forward)

10

11

12

13

14

15

16

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4

VCC

A15
A17

WE

A13

A11

OE

A10

CS
I/O8
I/O7
I/O6
I/O5
I/O4

32

31

30

29

28

A8

27

A9

26

32-TSOP2

25

(Reverse)

24

23

22

21

20

19

18

17

1

A18
A16

2

A14

3

A12

4

5

6

7

8

9

10

11

12

13

14

15

VSS

16

FUNCTIONAL BLOCK DIAGRAM

A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3

Standby

(ISB1, Max)

80µA

100µA

I/O1 Data
I/O8

Clk gen.

(ICC2, Max)

Row
select

cont

Data
cont

Operating

55mA

PKG Type

32-DIP,32-SOP
32-TSOP2-F/R

32-SOP
32-TSOP2-F/R

Precharge circuit.

Memory array
1024 rows
512×8 columns

I/O Circuit

Column select

Pin Name Function

WE Write Enable Input

CS Chip Select Input

OE Output Enable Input

A0~A18 Address Inputs

CS

WE

OE

Control
logic

I/O1~I/O8 Data Inputs/Outputs

Vcc Power
Vss Ground

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

2

Revision 1.0

April 1999

K6T4008C1C Family

PRODUCT LIST

Commercial Temperature Products(0~70°C) Industrial Temperature Products(-40~85°C)

Part Name Function Part Name Function

K6T4008C1C-DL55
K6T4008C1C-DB55
K6T4008C1C-DL70
K6T4008C1C-DB70

32-DIP, 55ns, Low Power
32-DIP, 55ns, Low Low Power
32-DIP, 70ns, Low Power
32-DIP, 70ns, Low Low Power

K6T4008C1C-GP55
K6T4008C1C-GF55
K6T4008C1C-GP70
K6T4008C1C-GF70

32-SOP, 55ns, Low Power
32-SOP, 55ns, Low Low Power
32-SOP, 70ns, Low Power
32-SOP, 70ns, Low Low Power

CMOS SRAM

K6T4008C1C-GL55
K6T4008C1C-GB55
K6T4008C1C-GL70
K6T4008C1C-GB70

K6T4008C1C-VB55
K6T4008C1C-VB70
K6T4008C1C-MB55
K6T4008C1C-MB70

32-SOP, 55ns, Low Power
32-SOP, 55ns, Low Low Power
32-SOP, 70ns, Low Power
32-SOP, 70ns, Low Low Power

32-TSOP2-F, 55ns, Low Low Power
32-TSOP2-F, 70ns, Low Low Power
32-TSOP2-R, 55ns, Low Low Power
32-TSOP2-R, 70ns, Low Low Power

K6T4008C1C-VF55
K6T4008C1C-VF70
K6T4008C1C-MF55
K6T4008C1C-MF70

32-TSOP2-F, 55ns, Low Low Power
32-TSOP2-F, 70ns, Low Low Power
32-TSOP2-R, 55ns, Low Low Power
32-TSOP2-R, 70ns, Low Low Power

FUNCTIONAL DESCRIPTION

CS OE WE I/O Pin Mode Power

H
L H H High-Z Output disbaled Active
L L H Dout Read Active
L

1. X means don′t care.( Must be in low or high state.)

1)

X

1)

X

ABSOLUTE MAXIMUM RATINGS

Item Symbol Ratings Unit Remark

Voltage on any pin relative to Vss VIN,VOUT -0.5 to 7.0 V ­Voltage on Vcc supply relative to Vss VCC -0.5 to 7.0 V ­Power Dissipation PD 1.0 W ­Storage temperature TSTG -65 to 150 °C -

Operating Temperature TA

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

1)

X

L Din Write Active

1)

High-Z Deselected Standby

0 to 70 °C K6T4008C1C-L/-B

-40 to 85 °C K6T4008C1C-P/-F

3

Revision 1.0

April 1999