SAMSUNG K6T1008C2E Technical data
查询K6T1008C2E供应商
Document Title
128Kx8 bit Low Power CMOS Static RAM
Revision History
CMOS SRAMK6T1008C2E Family
Revision No.
0.0
1.0
1.01
2.0
3.0
History
Design target
Finalize
- Improve tWP form 55ns to 50ns for 70ns product.
- Remove 55ns speed bin from industrial product.
Errata correction
Revise
Revise
- Add 55ns parts to industrial products.
Draft Data
October 12, 1998
August 30, 1999
December 1, 1999
February 14, 2000
March 3, 2000
Remark
Preliminary
Final
Final
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 3.0
March 2000
128Kx8 bit Low Power CMOS Static RAM
CMOS SRAMK6T1008C2E Family
FEATURES
• Process Technology: TFT
• Organization: 128Kx8
• Power Supply Voltage: 4.5~5.5V
• Low Data Retention Voltage: 2V(Min)
• Three state output and TTL Compatible
• Package Type: 32-DIP-600, 32-SOP-525,
32-TSOP1-0820F/R
GENERAL DESCRIPTION
The K6T1008C2E families are fabricated by SAMSUNG′s
advanced CMOS process technology. The families support
various operating temperature ranges and have various package types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range Speed
K6T1008C2E-L
K6T1008C2E-B 10µA
K6T1008C2E-P
Commercial(0~70°C)
4.5~5.5V 551)/70ns
Industrial(-40~85°C)
K6T1008C2E-F 15µA
1. The parameters are tested with 50pF test load
PIN DESCRIPTION
N.C
A16
A14
A12
I/O1
I/O2
I/O3
VSS
1
2
3
4
A7
5
6
A6
32-SOP
A5
7
32-DIP
A4
8
9
A3
A2
10
A1
11
12
A0
13
14
15
16
VCC
32
A15
31
CS2
30
WE
29
A13
28
A8
27
26
A9
A11
25
24
OE
23
A10
22
CS1
21
I/O8
20
I/O7
19
I/O6
18
I/O5
17
I/O4
A11
A13
WE
CS2
A15
VCC
A16
A14
A12
A12
A14
A16
VCC
A15
CS2
WE
A13
A11
1
A9
2
A8
3
4
5
6
7
8
NC
9
10
11
12
A7
13
A6
14
A5
15
A4
16
A4
16
A5
15
A6
14
A7
13
12
11
10
NC
9
8
7
6
5
4
A8
3
A9
2
1
32-TSOP
Type1-Forward
32-TSOP
Type1-Reverse
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
FUNCTIONAL BLOCK DIAGRAM
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
I/O4
I/O5
I/O6
I/O7
I/O8
CS1
A10
OE
Name Function
CS1, CS2 Chip Select Input
OE Output Enable Input
WE Write Enable Input
I/O1~I/O8 Data Inputs/Outputs
A0~A16 Address Inputs
Vcc Power
Vss Ground
N.C. No Connection
CS1
CS2
WE
OE
Standby
(ISB1, Max)
Raw
Address
I/O1
I/O8
Control
logic
Power Dissipation
Operating
(ICC2, Max)
50µA
50mA
50µA
Clk gen.
Row
select
Data
cont
Data
cont
PKG Type
32-DIP-600, 32-SOP-525
32-TSOP1-0820F/R
32-SOP -525
32-TSOP1-0820F/R
Precharge circuit.
Memory array
1024 rows
128×8 columns
I/O Circuit
Column select
Column Address
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 3.0
March 2000
PRODUCT LIST
Commercial Temperature Products(0~70°C) Industrial Temperature Products(-40~85°C)
Part Name Function Part Name Function
K6T1008C2E-DL55
K6T1008C2E-DL70
K6T1008C2E-DB55
K6T1008C2E-DB70
32-DIP, 55ns, Low Power
32-DIP, 70ns, Low Power
32-DIP, 55ns, Low Low Power
32-DIP, 70ns, Low Low Power
K6T1008C2E-GP55
K6T1008C2E-GP70
K6T1008C2E-GF55
K6T1008C2E-GF70
CMOS SRAMK6T1008C2E Family
32-SOP, 55ns, Low Power
32-SOP, 70ns, Low Power
32-SOP, 55ns, Low Low Power
32-SOP, 70ns, Low Low Power
K6T1008C2E-GL55
K6T1008C2E-GL70
K6T1008C2E-GB55
K6T1008C2E-GB70
K6T1008C2E-TB55
K6T1008C2E-TB70
K6T1008C2E-RB55
K6T1008C2E-RB70
32-SOP, 55ns, Low Power
32-SOP, 70ns, Low Power
32-SOP, 55ns, Low Low Power
32-SOP, 70ns, Low Low Power
32-TSOP F, 55ns, Low Low Power
32-TSOP F, 70ns, Low Low Power
32-TSOP R, 55ns, Low Low Power
32-TSOP R, 70ns, Low Low Power
K6T1008C2E-TF55
K6T1008C2E-TF70
K6T1008C2E-RF55
K6T1008C2E-RF70
32-TSOP F, 55ns, Low Low Power
32-TSOP F, 70ns, Low Low Power
32-TSOP R, 55ns, Low Low Power
32-TSOP R, 70ns, Low Low Power
FUNCTIONAL DESCRIPTION
CS1 CS2 OE WE I/O Mode Power
H
1)
X
1)
X
L
L H H H High-Z Output Disabled Active
L H L H Dout Read Active
L H
1. X means don′t care (Must be in high or low states)
ABSOLUTE MAXIMUM RATINGS
Item Symbol Ratings Unit Remark
Voltage on any pin relative to Vss VIN,VOUT -0.5 to 7.0 V Voltage on Vcc supply relative to Vss VCC -0.5 to 7.0 V Power Dissipation PD 1.0 W Storage temperature TSTG -65 to 150 °C -
Operating Temperature TA
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
1)
X
1)
X
1)
X
1)
X
1)
X
High-Z Deselected Standby
High-Z Deselected Standby
L Din Write Active
1)
0 to 70 °C K6T1008C2E-L/-B
-40 to 85 °C K6T1008C2E-P/-F
3
Revision 3.0
March 2000
Loading...