SAMSUNG K6T1008C2C Technical data

K6T1008C2C

K6T1008C2C Family	CMOS SRAM

Document Title

128K x8 bit Low Power CMOS Static RAM

Revision History

Revision No.	History	Draft Date	Remark
0.0	Initial draft	November 22, 1995	Design target
0.1	First revision	April 15, 1996	Preliminary
	- Seperate read and write at ICC,	ICC1
	ICC = ICC1 → Read : 15mA, Write : 35mA
1.0	Finalized	September 5, 1996	Final

-Add 70ns speed bin for commercial product and 85ns speed bin for industrial.

2.0

Revised

November 5, 1997

Final

-Improved operating current Add typical value.

ICC Read : 15mA → 10mA(Remove write current) ICC2 : 90mA → 60mA

-Speed bin change

Remove 45ns from commercial part Remove 55ns and 100ns from industrial part.

The attached data sheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

1	Revision 2.0

November 1997

K6T1008C2C Family	CMOS SRAM

128K x8 bit Low Power CMOS Static RAM

FEATURES

∙Process Technology: TFT

∙Organization: 128K x8

∙Power Supply Voltage: 4.5~5.5V

∙Low Data Retention Voltage: 2V(Min)

∙Three state output and TTL Compatible

∙Package Type: 32-DIP-600, 32-SOP-525,

32-TSOP1-0820F/R

GENERAL DESCRIPTION

The K6T1008C2C families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery backup operation with low data retention current.

PRODUCT FAMILY

					Power Dissipation
	Product Family	Operating Temperature	Vcc Range	Speed	Standby	Operating	PKG Type
					(ISB1, Max)	(ICC2, Max)
	K6T1008C2C-L	Commercial(0~70°C)		55/70ns	50μA		32-DIP, 32-SOP
	K6T1008C2C-B				10μA		32-TSOP1-F/R
			4.5~5.5V			60mA
	K6T1008C2C-P	Industrial(-40~85°C)		70ns	50μA		32-SOP
	K6T1008C2C-F				15μA		32-TSOP1-F/R
	PIN DESCRIPTION			FUNCTIONAL BLOCK DIAGRAM

												A11
															1		32		OE
													A9		2		31		A10
													A8
															3		30		CS1
N.C		1				32		VCC A13							4		29		I/O8
A16		2				31		A15					WE		5		28		I/O7
												CS2			6		27		I/O6
A14		3				30		CS2				A15			7	32-TSOP	26		I/O5
												VCC			8		25		I/O4
A12		4				29		WE				N.C			9	Type1 - Forward	24		VSS
A7		5				28		A13				A16			10		23		I/O3
A6		6				27		A8				A14			11		22		I/O2
								A9				A12			12		21		I/O1
A5		7	32-DIP			26							A7		13		20		A0
A4		8				25		A11					A6		14		19		A1
			32-SOP										A5		15		18		A2
A3		9				24		OE					A4		16		17		A3
A2		10				23		A10
A1		11				22		CS1					A4		16		17			A3
A0		12				21		I/O8
													A5		15		18			A2
I/O1		13				20		I/O7					A6		14		19			A1
I/O2		14				19		I/O6					A7		13		20			A0
												A12			12		21			I/O1
I/O3		15				18		I/O5				A14			11		22			I/O2
VSS		16				17		I/O4				A16			10	32-TSOP	23			I/O3
												N.C			9		24			VSS
												VCC			8	Type1 - Reverse	25			I/O4
															7		26
												A15								I/O5
												CS2			6		27			I/O6
															5		28			I/O7
													WE
												A13			4		29			I/O8
													A8		3		30
																				CS1
													A9		2		31			A10
												A11			1		32
																				OE

	Name				Function	Name	Function
	CS1,CS2				Chip Select Inputs	I/O1~I/O8	Data Inputs/Outputs
		OE			Output Enable	Vcc	Power
		WE			Write Enable Input	Vss	Ground
	A0~A16				Address Inputs	N.C	No Connection

		Clk gen.	Precharge circuit.
	A4						VCC
	A5						VSS
	A6
	A7	Row	Memory array
	A8		1024 rows
		select
	A12		128×8 columns
	A13
	A14
	A15
	A16
I/O1		Data		I/O Circuit
I/O8		cont	Column select
		Data
		cont
		A0	A1	A2	A3	A9	A10 A11
CS1
CS2	Control
WE	logic
OE

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

2	Revision 2.0

November 1997

	K6T1008C2C Family			CMOS SRAM
	PRODUCT LIST
	Commercial Temperature Products(0~70°C)		Industrial Temperature Products(-40~85°C)
	Part Name	Function	Part Name	Function
	K6T1008C2C-DL55	32-DIP, 55ns, L-pwr	K6T1008C2C-GP70	32-SOP, 70ns, L-pwr
	K6T1008C2C-DL70	32-DIP, 70ns, L-pwr	K6T1008C2C-GF70	32-SOP, 70ns, LL-pwr
	K6T1008C2C-DB55	32-DIP, 55ns, LL-pwr
	K6T1008C2C-DB70	32-DIP, 70ns, LL-pwr	K6T1008C2C-TF70	32-TSOP1-F, 70ns, LL-pwr
		32-SOP, 55ns, L-pwr	K6T1008C2C-RF70
	K6T1008C2C-GL55			32-TSOP1-R, 70ns, LL-pwr
	K6T1008C2C-GL70	32-SOP, 70ns, L-pwr
		32-SOP, 55ns, LL-pwr
	K6T1008C2C-GB55
		32-SOP, 70ns, LL-pwr
	K6T1008C2C-GB70
	K6T1008C2C-TB55	32-TSOP1-F, 55ns, LL-pwr
		32-TSOP1-F, 70ns, LL-pwr
	K6T1008C2C-TB70
	K6T1008C2C-RB55	32-TSOP1-R, 55ns, LL-pwr
	K6T1008C2C-RB70	32-TSOP1-R, 70ns, LL-pwr

FUNCTIONAL DESCRIPTION

CS1

CS2

OE

WE

I/O Pin

Mode

Power

H

X1)

X1)

X1)

High-Z

Deselected

Standby

X1)

L

X1)

X1)

High-Z

Deselected

Standby

L

H

H

H

High-Z

Output Disable

Active

L

H

L

H

Dout

Read

Active

L

H

X1)

L

Din

Write

Active

1. X means don′t care(Must be in high or low status.)

ABSOLUTE MAXIMUM RATINGS1)

	Item	Symbol	Ratings	Unit	Remark
	Voltage on any pin relative to Vss	VIN, VOUT	-0.5 to 7.0	V	-
	Voltage on Vcc supply relative to Vss	VCC	-0.5 to 7.0	V	-
	Power Dissipation	PD	1.0	W	-
	Storage temperature	TSTG	-65 to 150	°C	-
	Operating Temperature	TA	0 to 70	°C	K6T1008C2C-L
			-40 to 85	°C	K6T1008C2C-P
	Soldering temperature and time	TSOLDER	260°C, 10sec (Lead Only)	-	-

1.Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

3	Revision 2.0

November 1997