SAMSUNG K6F4016U4G Technical data

K6F4016U4G		Preliminary
	K6F4016U4G Family	CMOS SRAM

Document Title

256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Revision History

Revision No.	History	Draft Date	Remark
0.0	Initial Draft	October 15, 2003	Preliminary

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

- 1 -	Revision 0.0
	October 2003

	Preliminary
K6F4016U4G Family	CMOS SRAM

256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM

FEATURES

∙Process Technology: Full CMOS

∙Organization: 256K x16 bit

∙Power Supply Voltage: 2.7~3.3V

∙Low Data Retention Voltage: 1.5V(Min)

∙Three State Outputs

∙Package Type: 48-TBGA-6.00x7.00

GENERAL DESCRIPTION

The K6F4016U4G families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The family also supports low data retention voltage for battery back-up operation with low data retention current.

PRODUCT FAMILY

				Power Dissipation
Product Family	Operating Temperature	Vcc Range	Speed	Standby	Operating	PKG Type
				(ISB1, Typ.)	(ICC1, Max)
K6F4016U4G-F	Industrial(-40~85°C)	2.7~3.3V	551)/70ns	3μA2)	4mA	48-TBGA-6.00x7.00

1.The parameter is measured with 30pF test load.

2.Typical value is measured at VCC=3.0V, TA=25°C and not 100% tested.

PIN DESCRIPTION

FUNCTIONAL BLOCK DIAGRAM

1

2

3

4

5

6

A

LB

OE

A0

A1

A2

DNU

B

I/O9

UB

A3

A4

CS

I/O1

C

I/O10

I/O11

A5

A6

I/O2

I/O3

D

Vss

I/O12

A17

A7

I/O4

Vcc

E

Vcc

I/O13

DNU

A16

I/O5

Vss

F

I/O15

I/O14

A14

A15

I/O6

I/O7

G

I/O16

DNU

A12

A13

WE

I/O8

H

DNU

A8

A9

A10

A11

DNU

48-TBGA: Top View (Ball Down)

Name

Function

Name

Function

CS

Chip Select Inputs

Vcc

Power

OE

Output Enable Input

Vss

Ground

WE

Write Enable Input

UB

Upper Byte(I/O9~16)

A0~A17

Address Inputs

LB

Lower Byte(I/O1~8)

I/O1~I/O16

Data Inputs/Outputs

DNU

Do Not Use

		Clk gen.	Precharge circuit.
			Vcc
			Vss
	Row		Memory
	Addresses	Row
			Cell
		select
			Array
	I/O1~I/O8	Data	I/O Circuit
		cont	Column select
	I/O9~I/O16	Data
		cont
		Data
		cont
			Column Addresses
	CS
	OE	Control Logic
	WE
	UB
	LB

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

- 2 -	Revision 0.0
	October 2003

Preliminary

K6F4016U4G Family

CMOS SRAM

PRODUCT LIST

Industrial Temperature Products(-40~85°C)

Part Name

Function

K6F4016U4G-EF55

48-TBGA, 55ns, 3.0V

K6F4016U4G-EF70

48-TBGA, 70ns, 3.0V

FUNCTIONAL DESCRIPTION

CS

OE

WE

LB

UB

I/O1~8

I/O9~16

Mode

Power

H

X1)

X1)

X1)

X1)

High-Z

High-Z

Deselected

Standby

X1)

X1)

X1)

H

H

High-Z

High-Z

Deselected

Standby

L

H

H

L

X1)

High-Z

High-Z

Output Disabled

Active

L

H

H

X1)

L

High-Z

High-Z

Output Disabled

Active

L

L

H

L

H

Dout

High-Z

Lower Byte Read

Active

L

L

H

H

L

High-Z

Dout

Upper Byte Read

Active

L

L

H

L

L

Dout

Dout

Word Read

Active

L

X1)

L

L

H

Din

High-Z

Lower Byte Write

Active

L

X1)

L

H

L

High-Z

Din

Upper Byte Write

Active

L

X1)

L

L

L

Din

Din

Word Write

Active

1. X means don′t care. (Must be low or high state)

ABSOLUTE MAXIMUM RATINGS1)

Item	Symbol	Ratings	Unit
Voltage on any pin relative to Vss	VIN, VOUT	-0.3 to VCC+0.3V(Max. 3.6V)	V
Voltage on Vcc supply relative to Vss	VCC	-0.3 to 3.6	V
Power Dissipation	PD	1.0	W
Storage temperature	TSTG	-65 to 150	°C
Operating Temperature	TA	-40 to 85	°C

1.Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted within recommended operating condition. Exposure to absolute maximum rating conditions for extended period may affect reliability.

- 3 -	Revision 0.0
	October 2003