SAMSUNG K6F4016U4G Technical data
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Preliminary
K6F4016U4G Family
Document Title
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
0.0
History
Initial Draft
Draft Date
October 15, 2003
CMOS SRAM
Remark
Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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Revision 0.0
October 2003
Preliminary
K6F4016U4G Family
CMOS SRAM
256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
• Process Technology: Full CMOS
• Organization: 256K x16 bit
• Power Supply Voltage: 2.7~3.3V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 48-TBGA-6.00x7.00
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range Speed
K6F4016U4G-F Industrial(-40~85°C) 2.7~3.3V
1. The parameter is measured with 30pF test load.
2. Typical value is measured at VCC=3.0V, TA=25°C and not 100% tested.
PIN DESCRIPTION
1 2 3 4 5 6
A
LB OE A0 A1 A2 DNU
B
I/O9 UB A3 A4 CS I/O1
C
I/O10 I/O11 A5 A6 I/O2 I/O3
GENERAL DESCRIPTION
The K6F4016U4G families are fabricated by SAMSUNG′s
advanced full CMOS process technology. The families support
industrial temperature range and 48 ball Chip Scale Package
for user flexibility of system design. The family also supports
low data retention voltage for battery back-up operation with
low data retention current.
Power Dissipation
Standby
(ISB1, Typ.)
551)/70ns 3µA
Operating
(ICC1, Max)
2)
4mA 48-TBGA-6.00x7.00
PKG Type
FUNCTIONAL BLOCK DIAGRAM
Precharge circuit.
Memory
Cell
Array
Row
Addresses
Clk gen.
Row
select
Vcc
Vss
Vss
D
E
F
G
H
I/O12 A17 A7 I/O4 Vcc
Vcc I/O13 A16 I/O5 Vss
I/O15 I/O14 A14 A15 I/O6 I/O7
I/O16 DNU A12 A13 WE I/O8
DNU A8 A9 A10 A11 DNU
DNU
48-TBGA: Top View (Ball Down)
Name Function Name Function
CS Chip Select Inputs Vcc Power
OE Output Enable Input Vss Ground
WE Write Enable Input UB Upper Byte(I/O9~16)
A0~A17 Address Inputs LB Lower Byte(I/O1~8)
I/O1~I/O16 Data Inputs/Outputs DNU Do Not Use
I/O9~I/O16
I/O1~I/O8
CS
OE
WE
UB
LB
Control Logic
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
Column Addresses
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
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Revision 0.0
October 2003
Preliminary
K6F4016U4G Family
CMOS SRAM
PRODUCT LIST
Industrial Temperature Products(-40~85°C)
Part Name Function
K6F4016U4G-EF55
K6F4016U4G-EF70
48-TBGA, 55ns, 3.0V
48-TBGA, 70ns, 3.0V
FUNCTIONAL DESCRIPTION
CS OE WE LB UB I/O1~8 I/O9~16 Mode Power
H
1)
X
1)
X
1)
X
L H H
L H H
L L H L H Dout High-Z Lower Byte Read Active
L L H H L High-Z Dout Upper Byte Read Active
L L H L L Dout Dout Word Read Active
L
L
L
1. X means don′t care. (Must be low or high state)
1)
X
1)
X
1)
X
1)
X
1)
X
1)
X
1)
X
High-Z High-Z Deselected Standby
H H High-Z High-Z Deselected Standby
1)
L X
1)
X
L
High-Z High-Z Output Disabled Active
High-Z High-Z Output Disabled Active
L L H Din High-Z Lower Byte Write Active
L H L High-Z Din Upper Byte Write Active
L L L Din Din Word Write Active
ABSOLUTE MAXIMUM RATINGS
1)
Item Symbol Ratings Unit
Voltage on any pin relative to Vss VIN, VOUT -0.3 to VCC+0.3V(Max. 3.6V) V
Voltage on Vcc supply relative to Vss VCC -0.3 to 3.6 V
Power Dissipation PD 1.0 W
Storage temperature TSTG -65 to 150 °C
Operating Temperature TA -40 to 85 °C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted within recommended operating condition. Exposure to absolute maximum rating conditions for extended period may affect reliability.
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Revision 0.0
October 2003
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