SAMSUNG K6F4008U2E Technical data

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K6F4008U2E Family

Document Title

512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM

Revision History

Revision No.

0.0

1.0

History

Initial Draft

Finalize

Draft Date

October 25, 2000

March 12, 2001

CMOS SRAM

Remark

Preliminary

Final

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

- 1 -

Revision 1.0

March 2001

K6F4008U2E Family

CMOS SRAM

512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM

FEATURES

• Process Technology: Full CMOS

• Organization: 512K x8 bit

• Power Supply Voltage: 2.7~3.3V

• Low Data Retention Voltage: 1.5V(Min)

• Three State Outputs

• Package Type: 48(36)-TBGA-6.00x7.00

PRODUCT FAMILY

Product Family Operating Temperature Vcc Range Speed

K6F4008U2E-F Industrial(-40~85°C) 2.7~3.3V

1. The parameter is measured with 30pF test load.

2. Typical value are at VCC=3.0V, TA=25°C and not 100% tested.

551)/70ns 1.0µA

PIN DESCRIPTION

1 2 3 4 5 6

A

A0 A1 CS2 A3 A6 A8

B

I/O5 A2 WE A4 A7 I/O1

C

I/O6 DNU A5 I/O2

D

VSS VCC

48(36)-TBGA

E

VCC VSS

F

I/O7 A18 A17 I/O3

GENERAL DESCRIPTION

The K6F4008U2E families are fabricated by SAMSUNG′s
advanced full CMOS process technology. The families support
industrial temperature range and Chip Scale Package for user
flexibility of system design. The families also supports low data
retention voltage for battery back-up operation with low data
retention current.

Power Dissipation

Standby

(ISB1, Typ.)

2)

Operating

(ICC1, Max)

2mA 48(36)-TBGA-6.00x7.00

PKG Type

FUNCTIONAL BLOCK DIAGRAM

Clk gen.

Row
Address

I/O1 Data
I/O8

Row
select

cont

Precharge circuit.

Memory

Cell

Array

I/O Circuit

Column select

G

I/O8 OE CS1 A16 A15 I/O4

H

A9 A10 A11 A12 A13 A14

Name Function Name Function

CS1, CS2 Chip Select Inputs I/O1~I/O8 Data Inputs/Outputs

OE Output Enable Input Vcc Power

CS1
CS2
WE
OE

Control
logic

Data
cont

Column Address

WE Write Enable Input Vss Ground

A0~A18 Address Inputs DNU Do Not Use

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

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Revision 1.0

March 2001

K6F4008U2E Family

CMOS SRAM

PRODUCT LIST

Industrial Temperature Products(-40~85°C)

Part Name Function

K6F4008U2E-EF55
K6F4008U2E-EF70

48(36)-TBGA, 55ns, 3.0V
48(36)-TBGA, 70ns, 3.0V

FUNCTIONAL DESCRIPTION

CS1 CS2 OE WE I/O Mode Power

H

1)

X

L H H H High-Z Output Disabled Active
L H L H Dout Read Active
L H

1. X means don′t care (Must be in low or high state)

1)

X

L

1)

X

1)

X

1)

X

1)

X

1)

X

L Din Write Active

High-Z Deselected Standby
High-Z Deselected Standby

ABSOLUTE MAXIMUM RATINGS

Item Symbol Ratings Unit

Voltage on any pin relative to Vss VIN, VOUT -0.5 to VCC+0.3V(Max. 3.6V) V
Voltage on Vcc supply relative to Vss VCC -0.3 to 3.6 V
Power Dissipation PD 1.0 W
Storage temperature TSTG -65 to 150 °C
Operating Temperature TA -40 to 85 °C

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

1)

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Revision 1.0

March 2001