Samsung K5T6432YTM-T310, K5T6432YBM-T310 Datasheet

MCP MEMORYK5T6432YT(B)M

Revision 1.0

November 2001

- 1 -

Document Title

Multi-Chip Package MEMORY

64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision History

Revision No.

1.0

Remark

Final

History

Final Specification

Draft Date

November 27, 2001

MCP MEMORYK5T6432YT(B)M

Revision 1.0

November 2001

- 2 -

Multi-Chip Package MEMORY

64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM

The K5T6432YT(B)M featuring single 3.0V power supply is a Multi Chip Package Memory which combines 64Mbit Four Bank Flash and 32Mbit UtRAM. The 64Mbit Flash memory is organized as 4M x16 bit and 32Mbit UtRAM is organized as 2M x16 bit. The 64Mbit Flash memory is the high performance non-volatile memory fabricated by CMOS technology for peripheral circuit and DINOR IV(Diveded bit-line NOR IV) architecture for the memory cell. All memory blocks are locked and can be programmed or erased, when F-WP is low. Using Software Lock Release function, program erase operation can be executed. The 32Mbit UtRAM is fabricated by SAMSUNG’s advanced CMOS technology using one transistor memory cell. The device also supports deep power down mode for low standby current. The K5T6432YT(B)M is suitable for use in program and data memory of mobile communication system to reduce mount area. This device is available in 81-ball TBGA Type package.

FEATURES

• Power Supply voltage : 2.7 to 3.3 V

• Organization

- Flash : 4,194,304 x 16 bit

- UtRAM : 2,097,152 x 16 bit

• Access Time (@2.7V)

- Flash : 85 ns, UtRAM : 100 ns

• Power Consumption (typical value)

- Flash Read Current : 20 mA (@5MHz) Sequential Page Read Current : 5 mA (@5MHz) Program/Erase Current : 35 mA (Max.) Standby mode/Deep Power mode : 0.1 µA

- UtRAM Operating Current : 18 mA Standby Current :120 µA Deep Power Down : 5 µA

• Secode(Security Code) Block : Extra 32KW Block (Flash)

• Block Group Protection / Unprotection (Flash)

• 128 words Page Program (Flash)

• Flash Bank Size : 4Mb / 4Mb / 28Mb / 28Mb

• Flash Endurance : 100,000 Program/Erase Cycles

• Ambient Temperature : -25°C ~ 85°C

• Endurance : 100,000 Program/Erase Cycles

• Package :81 - ball TBGA Type - 10.8 x 10.4 mm, 0.8 mm pitch

GENERAL DESCRIPTION

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

BALL CONFIGURATION BALL DESCRIPTION

Top View (Ball Down)

A3A

A19

A2A5A18

-RY/B

A20A9

DQ6

F-CEO

DQ9DQ3DQ4DQ

A10

DQ1

A17

A11

12A15

A13A2

A14

N.C

A16

DQ1

F-Vcc

DQ8DQ2D

DQ5

DQ1

DQ0DQ10

VccDQ

12DQ7

Vss

N.C

910

81 Ball TBGA , 0.8mm Pitch

N.C

N.CN.

N.C

N.CN.

N.C

N.CN.

N.C

N.CN.

N.C

N.CN.

N.C

N.CN.

N.C

N.CN.

N.C

F-W

F-R

F-Vcc

A B

C D E

Ball Name Description

A0 to A20 Address Input Balls (Common)

A21 Address Input Ball (Flash Memory)

DQ0 to DQ15 Data Input/Output Balls (Common)

F-RP Hardware Reset (Flash Memory)

F-WP Write Protect (Flash Memory) F-Vcc Power Supply (Flash Memory)

Vcc Power Supply (UtRAM)) Vss Ground (Common)

UB Upper Byte Enable (UtRAM)

LB Lower Byte Enable (UtRAM)

F-CE Chip Enable (Flash Memory)

ZZ Deep Power Down (UtRAM)

WE Write Enable (Common)

OE Output Enable (Common)

F-RY/BY Ready/Busy (Flash memory)

N.C No Connection

MCP MEMORYK5T6432YT(B)M

Revision 1.0

November 2001

- 3 -

ORDERING INFORMATION

K 5 T 64 32 Y T M - T 3 10

Samsung MCP Memory

Device Type

Mitsubishi NOR Flash + UtRAM

NOR Flash Density (Organization) , (BankSize) 64 : 64Mbit (x16 Selectable)

(4Mb, 4Mb, 28Mb,2 8Mb)

Block Architecture

T = Top Boot Block B = Bottom Boot Block

Version

M = 1st Generation

UtRAM Access Time

10 = 100 ns

Operating Voltage Range

2.7V to 3.3V

Package

T = 81 TBGA

UtRAM Density , Organization

32Mbit , x16 Selectable

Flash Access Time

3 = 85 ns

MCP MEMORYK5T6432YT(B)M

Revision 1.0

November 2001

- 4 -

A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 A11 A10

A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

F-CE

F-WP

F-RP

Command

User

Interface

Write State

Machine

Status/ ID Register

Y-Decorder

X-decorder

Address

Input

Chip Enable

Output Enable

Write Enable

Write Protect

Reset

/PowerDown

Main Block 14 32K-word

Main Block 8 32K-word Parameter Block 7 4K-word

Parameter Block 2 4K-word Boot Block 1 4K-word Bppt Block 0 4K-word

Main Block 22 32K-word

Main Block 15 32K-word

Main Block 78 32K-word

Main Block 23 32K-word

Main Block 134 32K-word

Main Block 79 32K-word

Y-Gate / Sense Amp.

Bank4 56 blocks

Bank3 56 blocks

Bank2 8 blocks

Bank1 15 blocks

Multi Plexer

I/O Buffer

DQ15 DQ14 DQ1 DQ0

Data I/O

128-word Page Buffer

F-Vcc

Vss

FUNCTIONAL BLOCK DIAGRAM (64Mbit Flash Memory)

Flash Memory Part

MCP MEMORYK5T6432YT(B)M

Revision 1.0

November 2001

- 5 -

Table 1. Flash Memory Top Boot Block Address (K5T6432YT)

K5T6432YT Block Block Size

Address Range

Word Mode (x16)

Bank4

BA134 4 Kwords 3FF000H-3FFFFFH BA133 4 Kwords 3FE000H-3FEFFFH BA132 4 Kwords 3FD000H-3FDFFFH BA131 4 Kwords 3FC000H-3FCFFFH BA130 4 Kwords 3FB000H-3FBFFFH BA129 4 Kwords 3FA000H-3FAFFFH BA128 4 Kwords 3F9000H-3F9FFFH BA127 4 Kwords 3F8000H-3F8FFFH BA126 32 Kwords 3F0000H-3F7FFFH BA125 32 Kwords 3E8000H-3EFFFFH BA124 32 Kwords 3E0000H-3E7FFFH BA123 32 Kwords 3D8000H-3DFFFFH BA122 32 Kwords 3D0000H-3D7FFFH BA121 32 Kwords 3C8000H-3CFFFFH BA120 32 Kwords 3C0000H-3C7FFFH

Bank3

BA119 32 Kwords 3B8000H-3BFFFFH BA118 32 Kwords 3B0000H-3B7FFFH BA117 32 Kwords 3A8000H-3AFFFFH BA116 32 Kwords 3A0000H-3A7FFFH BA115 32 Kwords 398000H-39FFFFH BA114 32 Kwords 390000H-397FFFH BA113 32 Kwords 388000H-38FFFFH BA112 32 Kwords 380000H-387FFFH

Bank2

BA111 32 Kwords 378000H-37FFFFH BA110 32 Kwords 370000H-377FFFH BA109 32 Kwords 368000H-36FFFFH BA108 32 Kwords 360000H-367FFFH BA107 32 Kwords 358000H-35FFFFH BA106 32 Kwords 350000H-357FFFH BA105 32 Kwords 348000H-34FFFFH BA104 32 Kwords 340000H-347FFFH BA103 32 Kwords 338000H-33FFFFH BA102 32 Kwords 330000H-337FFFH BA101 32 Kwords 328000H-32FFFFH BA100 32 Kwords 320000H-327FFFH

BA99 32 Kwords 318000H-31FFFFH BA98 32 Kwords 310000H-317FFFH BA97 32 Kwords 208000H-20FFFFH BA96 32 Kwords 300000H-307FFFH BA95 32 Kwords 2F8000H-2FFFFFH BA94 32 Kwords 2F0000H-2F7FFFH BA93 32 Kwords 2E8000H-2EFFFFH BA92 32 Kwords 2E0000H-2E7FFFH BA91 32 Kwords 2D8000H-2DFFFFH BA90 32 Kwords 2D0000H-2D7FFFH

MCP MEMORYK5T6432YT(B)M

Revision 1.0

November 2001

- 6 -

Table 1. Flash Memory Top Boot Block Address (K5T6432YT)

K5T6432YT Block Block Size

Address Range

Word Mode (x16)

Bank2

BA89 32 Kwords 2C8000H-2CFFFFH BA88 32 Kwords 2C0000H-2C7FFFH BA87 32 Kwords 2B8000H-2BFFFFH BA86 32 Kwords 2B0000H-2B7FFFH BA85 32 Kwords 2A8000H-2AFFFFH BA84 32 Kwords 2A0000H-2A7FFFH BA83 32 Kwords 298000H-29FFFFH BA82 32 Kwords 290000H-297FFFH BA81 32 Kwords 288000H-28FFFFH BA80 32 Kwords 280000H-287FFFH BA79 32 Kwords 278000H-27FFFFH BA78 32 Kwords 270000H-277FFFH BA77 32 Kwords 268000H-26FFFFH BA76 32 Kwords 260000H-267FFFH BA75 32 Kwords 258000H-25FFFFH BA74 32 Kwords 250000H-257FFFH BA73 32 Kwords 248000H-24FFFFH BA72 32 Kwords 240000H-247FFFH BA71 32 Kwords 238000H-23FFFFH BA70 32 Kwords 230000H-237FFFH BA69 32 Kwords 228000H-22FFFFH BA68 32 Kwords 220000H-227FFFH BA67 32 Kwords 218000H-21FFFFH BA66 32 Kwords 210000H-217FFFH BA65 32 Kwords 208000H-20FFFFH BA64 32 Kwords 200000H-207FFFH BA63 32 Kwords 1F8000H-1FFFFFH BA62 32 Kwords 1F0000H-1F7FFFH BA61 32 Kwords 1E8000H-1EFFFFH BA60 32 Kwords 1E0000H-1E7FFFH BA59 32 Kwords 1D8000H-1DFFFFH BA58 32 Kwords 1D0000H-1D7FFFH BA57 32 Kwords 1C8000H-1CFFFFH BA56 32 Kwords 1C0000H-1C7FFFH

Bank1

BA55 32 Kwords 1B8000H-1BFFFFH BA54 32 Kwords 1B0000H-1B7FFFH BA53 32 Kwords 1A8000H-1AFFFFH BA52 32 Kwords 1A0000H-1A7FFFH BA51 32 Kwords 198000H-19FFFFH BA50 32 Kwords 190000H-197FFFH BA49 32 Kwords 188000H-18FFFFH BA48 32 Kwords 180000H-187FFFH BA47 32 Kwords 178000H-17FFFFH BA46 32 Kwords 170000H-177FFFH BA45 32 Kwords 168000H-16FFFFH

MCP MEMORYK5T6432YT(B)M

Revision 1.0

November 2001

- 7 -

Table 1. Flash Memory Top Boot Block Address (K5T6432YT)

K5T6432YT Block Block Size

Address Range

Word Mode (x16)

Bank1

BA44 32 Kwords 160000H-167FFFH BA43 32 Kwords 158000H-15FFFFH BA42 32 Kwords 150000H-157FFFH BA41 32 Kwords 148000H-14FFFFH BA40 32 Kwords 140000H-147FFFH BA39 32 Kwords 138000H-13FFFFH BA38 32 Kwords 130000H-137FFFH BA37 32 Kwords 128000H-12FFFFH BA36 32 Kwords 120000H-127FFFH BA35 32 Kwords 118000H-11FFFFH BA34 32 Kwords 110000H-117FFFH BA33 32 Kwords 108000H-10FFFFH BA32 32 Kwords 100000H-107FFFH BA31 32 Kwords F8000H-FFFFFH BA30 32 Kwords F0000H-F7FFFH BA29 32 Kwords E8000H-EFFFFH BA28 32 Kwords E0000H-E7FFFH BA27 32 Kwords D8000H-DFFFFH BA26 32 Kwords D0000H-D7FFFH BA25 32 Kwords C8000H-CFFFFH BA24 32 Kwords C0000H-C7FFFH BA23 32 Kwords B8000H-BFFFFH BA22 32 Kwords B0000H-B7FFFH BA21 32 Kwords A8000H-AFFFFH BA20 32 Kwords A0000H-A7FFFH BA19 32 Kwords 98000H-9FFFFH BA18 32 Kwords 90000H-97FFFH BA17 32 Kwords 88000H-8FFFFH BA16 32 Kwords 80000H-87FFFH BA15 32 Kwords 78000H-7FFFFH BA14 32 Kwords 70000H-77FFFH BA13 32 Kwords 68000H-6FFFFH BA12 32 Kwords 60000H-67FFFH BA11 32 Kwords 58000H-5FFFFH BA10 32 Kwords 50000H-57FFFH

BA9 32 Kwords 48000H-4FFFFH BA8 32 Kwords 40000H-47FFFH BA7 32 Kwords 38000H-3FFFFH BA6 32 Kwords 30000H-37FFFH BA5 32 Kwords 28000H-2FFFFH BA4 32 Kwords 20000H-27FFFH BA3 32 Kwords 18000H-1FFFFH BA2 32 Kwords 10000H-17FFFH BA1 32 Kwords 08000H-0FFFFH BA0 32 Kwords 00000H-07FFFH

MCP MEMORYK5T6432YT(B)M

Revision 1.0

November 2001

- 8 -

Table 2. Flash Memory Bottom Boot Block Address (K5T6432YB)

K5T6432YB Block Block Size

Address Range

Word Mode (x16)

Bank4

BA134 32 Kwords 3F8000H-3FFFFFH BA133 32 Kwords 3F0000H-3F7FFFH BA132 32 Kwords 3E8000H-3EFFFFH BA131 32 Kwords 3E0000H-3E7FFFH BA130 32 Kwords 3D8000H-3DFFFFH BA129 32 Kwords 3D0000H-3D7FFFH BA128 32 Kwords 3C8000H-3CFFFFH BA127 32 Kwords 3C0000H-3C7FFFH BA126 32 Kwords 3B8000H-3BFFFFH BA125 32 Kwords 3B0000H-3B7FFFH BA124 32 Kwords 3A8000H-3AFFFFH BA123 32 Kwords 3A0000H-3A7FFFH BA122 32 Kwords 398000H-39FFFFH BA121 32 Kwords 390000H-397FFFH BA120 32 Kwords 388000H-38FFFFH BA119 32 Kwords 380000H-387FFFH BA118 32 Kwords 378000H-37FFFFH BA117 32 Kwords 370000H-377FFFH BA116 32 Kwords 368000H-36FFFFH BA115 32 Kwords 360000H-367FFFH BA114 32 Kwords 358000H-35FFFFH BA113 32 Kwords 350000H-357FFFH BA112 32 Kwords 348000H-34FFFFH BA111 32 Kwords 340000H-347FFFH BA110 32 Kwords 338000H-33FFFFH BA109 32 Kwords 330000H-337FFFH BA108 32 Kwords 328000H-32FFFFH BA107 32 Kwords 320000H-327FFFH BA106 32 Kwords 318000H-31FFFFH BA105 32 Kwords 310000H-317FFFH BA104 32 Kwords 208000H-20FFFFH BA103 32 Kwords 300000H-307FFFH BA102 32 Kwords 2F8000H-2FFFFFH BA101 32 Kwords 2F0000H-2F7FFFH BA100 32 Kwords 2E8000H-2EFFFFH

BA99 32 Kwords 2E0000H-2E7FFFH BA98 32 Kwords 2D8000H-2DFFFFH BA97 32 Kwords 2D0000H-2D7FFFH BA96 32 Kwords 2C8000H-2CFFFFH BA95 32 Kwords 2C0000H-2C7FFFH BA94 32 Kwords 2B8000H-2BFFFFH BA93 32 Kwords 2B0000H-2B7FFFH BA92 32 Kwords 2A8000H-2AFFFFH BA91 32 Kwords 2A0000H-2A7FFFH BA90 32 Kwords 298000H-29FFFFH

MCP MEMORYK5T6432YT(B)M

Revision 1.0

November 2001

- 9 -

Table 2. Flash Memory Bottom Boot Block Address (K5T6432YB)

K5T6432YB Block Block Size

Address Range

Word Mode (x16)

Bank4

BA89 32 Kwords 290000H-297FFFH BA88 32 Kwords 288000H-28FFFFH BA87 32 Kwords 280000H-287FFFH BA86 32 Kwords 278000H-27FFFFH BA85 32 Kwords 270000H-277FFFH BA84 32 Kwords 268000H-26FFFFH BA83 32 Kwords 260000H-267FFFH BA82 32 Kwords 258000H-25FFFFH BA81 32 Kwords 250000H-257FFFH BA80 32 Kwords 248000H-24FFFFH BA79 32 Kwords 240000H-247FFFH

Bank3

BA78 32 Kwords 238000H-23FFFFH BA77 32 Kwords 230000H-237FFFH BA76 32 Kwords 228000H-22FFFFH BA75 32 Kwords 220000H-227FFFH BA74 32 Kwords 218000H-21FFFFH BA73 32 Kwords 210000H-217FFFH BA72 32 Kwords 208000H-20FFFFH BA71 32 Kwords 200000H-207FFFH BA70 32 Kwords 1F8000H-1FFFFFH BA69 32 Kwords 1F0000H-1F7FFFH BA68 32 Kwords 1E8000H-1EFFFFH BA67 32 Kwords 1E0000H-1E7FFFH BA66 32 Kwords 1D8000H-1DFFFFH BA65 32 Kwords 1D0000H-1D7FFFH BA64 32 Kwords 1C8000H-1CFFFFH BA63 32 Kwords 1C0000H-1C7FFFH BA62 32 Kwords 1B8000H-1BFFFFH BA61 32 Kwords 1B0000H-1B7FFFH BA60 32 Kwords 1A8000H-1AFFFFH BA59 32 Kwords 1A0000H-1A7FFFH BA58 32 Kwords 198000H-19FFFFH BA57 32 Kwords 190000H-197FFFH BA56 32 Kwords 188000H-18FFFFH BA55 32 Kwords 180000H-187FFFH BA54 32 Kwords 178000H-17FFFFH BA53 32 Kwords 170000H-177FFFH BA52 32 Kwords 168000H-16FFFFH BA51 32 Kwords 160000H-167FFFH BA50 32 Kwords 158000H-15FFFFH BA49 32 Kwords 150000H-157FFFH BA48 32 Kwords 148000H-14FFFFH BA47 32 Kwords 140000H-147FFFH BA46 32 Kwords 138000H-13FFFFH BA45 32 Kwords 130000H-137FFFH

MCP MEMORYK5T6432YT(B)M

Revision 1.0

November 2001

- 10 -

Table 2. Flash Memory Bottom Boot Block Address (K5T6432YB)

K5T6432YB Block Block Size

Address Range

Word Mode (x16)

Bank3

BA44 32 Kwords 128000H-12FFFFH BA43 32 Kwords 120000H-127FFFH BA42 32 Kwords 118000H-11FFFFH BA41 32 Kwords 110000H-117FFFH BA40 32 Kwords 108000H-10FFFFH BA39 32 Kwords 100000H-107FFFH BA38 32 Kwords F8000H-FFFFFH BA37 32 Kwords F0000H-F7FFFH BA36 32 Kwords E8000H-EFFFFH BA35 32 Kwords E0000H-E7FFFH BA34 32 Kwords D8000H-DFFFFH BA33 32 Kwords D0000H-D7FFFH BA32 32 Kwords C8000H-CFFFFH BA31 32 Kwords C0000H-C7FFFH BA30 32 Kwords B8000H-BFFFFH BA29 32 Kwords B0000H-B7FFFH BA28 32 Kwords A8000H-AFFFFH BA27 32 Kwords A0000H-A7FFFH BA26 32 Kwords 98000H-9FFFFH BA25 32 Kwords 90000H-97FFFH BA24 32 Kwords 88000H-8FFFFH BA23 32 Kwords 80000H-87FFFH

Bank2

BA22 32 Kwords 78000H-7FFFFH BA21 32 Kwords 70000H-77FFFH BA20 32 Kwords 68000H-6FFFFH BA19 32 Kwords 60000H-67FFFH BA18 32 Kwords 58000H-5FFFFH BA17 32 Kwords 50000H-57FFFH BA16 32 Kwords 48000H-4FFFFH BA15 32 Kwords 40000H-47FFFH

Bank1

BA14 32 Kwords 38000H-3FFFFH BA13 32 Kwords 30000H-37FFFH BA12 32 Kwords 28000H-2FFFFH BA11 32 Kwords 20000H-27FFFH BA10 32 Kwords 18000H-1FFFFH

BA9 32 Kwords 10000H-17FFFH BA8 32 Kwords 08000H-0FFFFH BA7 4 Kwords 07000H-07FFFH BA6 4 Kwords 06000H-06FFFH BA5 4 Kwords 05000H-05FFFH BA4 4 Kwords 04000H-04FFFH BA3 4 Kwords 03000H-03FFFH BA2 4 Kwords 02000H-02FFFH BA1 4 Kwords 01000H-01FFFH BA0 4 Kwords 00000H-00FFFH

MCP MEMORYK5T6432YT(B)M

Revision 1.0

November 2001

- 11 -

Flash MEMORY COMMAND DEFINITION

Table 3. Command List (F-WP = VIH or VIL)

Notes : 1. Upper byte data (DQ15-DQ8) is ignored.

2. Bank=Bank address (bank1-Bank4:A21-18)

3. IA=ID code address:A0=VIL (Manufacture’s code):A0=VIH (Device code), ID=ID code

4. SRD=Status Register Data

5. SA=Sequential page Address:A21-A3, A2-A0:0h

6. SA+i;A21-A3 must be flxed and A2-A0 must be incremented from 0h to 7h.

Command

1st Cycle 2nd Cycle 3rd Cycle

Mode Address

Data

(DQ0-15)

Mode

Address

Data

(DQ0-15)

Mode Address

Data

(DQ0-15)

A21-A18 A0

Read Array Write

FFH

Sequential Page Read Write

F3H Read

RD0 Read

SA+i

RDi

Device Identifier Write

Bank

90H Read

Bank

Read Status Register Write

Bank

70H Read

Bank

SRD

Clear Status Register Write X 50H Suspend Write

Bank

B0H

Resume Write

Bank

D0H

Table 4. Command List (F-WP = VIH)

Notes : 1. Upper byte data (DQ15-DQ8) is ignored.

2. WA=Write Address, WD=Write Data

3. WA0, WAn=Write Address, WD0, WDn=Write Data, Write address and write data must be provided sequentially from 00H to 7FH for A6-A0. Page size is 128 words (128-word x 16-bit), and also A21-A7(block address, page address) must be valid.

4. WA=Write Address:A21-A7 (block address, page address) must be valid.

5. BA=Block Address:A21-A12(Bank1), A21-A15(Bank2, Bank3, Bank4)

6. RA=Read Address:A21-A7 (block address, page address) must be valid.

Command

1st Cycle 2nd Cycle 3rd Cycle

Mode Address

Data

(DQ0-15)

Mode Address

Data

(DQ0-15)

Mode Address

Data

(DQ0-15)

Word Program Write Bank 40H Write

Page Program Write Bank 41H Write

WA0

WD0

Write

WAn

WDn

Page Buffer to Flash Write Bank 0EH Write

Block Erase / Confirm Write Bank 20H Write

Erase All Unlocked Blocks Write X A7H Write X

Clear Page Buffer Write X 55H Write X

Single Date Load to Page Buffer Write Bank 74H Write WA WD Flash to Page Buffer Write Bank F1H Write

MCP MEMORYK5T6432YT(B)M

Revision 1.0

November 2001

- 12 -

Flash MEMORY COMMAND DEFINITION

Software lock release operation needs following consecutive 7bus cycles. Moreover, additional 127 bus cycles are needed for page program operation.

Table 5. Command List (F-WP = VIH or VIL)

Setup Command for

Software Lock Release

1st Cycle 2nd Cycle 3rd Cycle

Mode Address

Data

(DQ0-15)

Mode Address

Data

(DQ0-15)

Mode Address

Data

(DQ0-15)

Word Program Write Bank 60H Write Bank

Block

Write Bank ACH

Page Program

Write Bank 60H Write Bank

Block

Write Bank ACH

Page Buffer to Flash Write Bank 60H Write Bank

Block

Write Bank ACH

Block Erase / Confirm Write Bank 60H Write Bank

Block

Write Bank ACH

Erase All Unlocked Blocks Write Bank 60H Write Bank

Block

Write Bank ACH

Clear Page Buffer Write Bank 60H Write Bank

Block

Write Bank ACH

Single Data Load to Page Buffer Write Bank 60H Write Bank

Block

Write Bank ACH

Flash to Page Buffer Write Bank 60H Write Bank

Block

Write Bank ACH

Setup Command for

Software Lock Release

4th Cycle 5th Cycle

Mode Address

Data

(DQ0-15)

Mode Address

Data

(DQ0-15)

Word Program Write Bank

Block

Write Bank 78H

Page Program

Write Bank

Block

Write Bank 78H

Page Buffer to Flash Write Bank

Block

Write Bank 78H

Block Erase / Confirm Write Bank

Block

Write Bank 78H

Erase All Unlocked Blocks Write Bank

Block

Write Bank 78H

Clear Page Buffer Write Bank

Block

Write Bank 78H

Single Data Load to Page Buffer Write Bank

Block

Write Bank 78H

Flash to Page Buffer Write Bank

Block

Write Bank 78H

Notes : 1. Upper byte data (DQ15-DQ8) is ignored.

2. WA=Write Address, WD=Write Data

3. WA0, WAn=Write Address, WD0, WDn=Write Data, Write address and write data must be provided sequentially from 00H to 7FH for A6-A0. Page size is 128 words (128 word x 16 bit), and also A21-A7(block address, page address) must be valid.

4. WA=Write Address:A21-A7 (block address, page address) must be valid.

5. BA=Block Address:A21-A12(Bank1), A21-A15(Bank2, Bank3, Bank4)

6. Block=Block Address:A21-A15, Block=A21-A15

Setup Command for

Software Lock Release

6th Cycle 7th Cycle 8th-134th Cycle

Mode Address

Data

(DQ0-15)

Mode Address

Data

(DQ0-15)

Mode Address

Data

(DQ0-15)

Word Program Write Bank 40h Write

Page Program

Write Bank 41h Write

WA0

WD0

Write

WAn

WDn

Page Buffer to Flash Write Bank 0Eh Write

Block Erase / Confirm Write Bank 20H Write

Erase All Unlocked Blocks Write X A7H Write X

Clear Page Buffer Write X 55H Write X

Single Data Load to Page Buffer Write Bank 74H Write WA WD Flash to Page Buffer Write Bank F1H Write

Address DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0

Block Fixed0 A21 A20 A19 A18 A17 A16 A15 Block Fixed0 A21 A20 A19 A18 A17 A16 A15

7. RA=Read Address: A21-A7 (block address, page address) must be valid.

+ 28 hidden pages