SAMSUNG K4S64323LH Technical data

K4S64323LH-FC1H

K4S64323LH - F(H)E/N/G/C/L/F

Mobile-SDRAM

512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

FEATURES

•2.5V power supply.

•LVCMOS compatible with multiplexed address.

•Four banks operation.

•MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

•EMRS cycle with address key programs.

•All inputs are sampled at the positive going edge of the system clock.

•Burst read single-bit write operation.

•Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

•DQM for masking.

•Auto refresh.

•64ms refresh period (4K cycle).

•Commercial Temperature Operation (-25°C ~ 70°C).

•Extended Temperature Operation (-25°C ~ 85°C).

•90Balls FBGA with 0.8mm ball pitch

( -FXXX : Leaded, -HXXX : Lead Free).

GENERAL DESCRIPTION

The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.

ORDERING INFORMATION

	Part No.	Max Freq.	Interface	Package
	K4S64323LH-F(H)E/N/G/C/L/F60	166MHz(CL=3)
	K4S64323LH-F(H)E/N/G/C/L/F75	133MHz(CL=3)	LVCMOS	90 FBGA
				Leaded (Lead Free)
	K4S64323LH-F(H)E/N/G/C/L/F1H	105MHz(CL=2)
	K4S64323LH-F(H)E/N/G/C/L/F1L	105MHz(CL=3)*1

-F(H)E/N/G : Normal/Low/Low Power, Extended Temperature(-25°C ~ 85°C)

-F(H)C/L/F : Normal/Low/Low Power, Commercial Temperature(-25°C ~ 70°C)

NOTES :

1.In case of 40MHz Frequency, CL1 can be supported.

2.Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

February 2004

K4S64323LH - F(H)E/N/G/C/L/F

Mobile-SDRAM

FUNCTIONAL BLOCK DIAGRAM

						Data Input Register
		Bank Select
	Address	CounterRefresh	BufferRow	DecoderRow			512K x 32	AMPSense
							512K x 32
							512K x 32
							512K x 32
CLK	Register
ADD
		LRAS	LCBR	Buffer.Col			Column Decoder
						Latency & Burst Length
LCKE						Programming Register
	LRAS	LCBR		LWE	LCAS		LWCBR
				Timing Register
	CLK	CKE	CS	RAS	CAS	WE	DQM

	I/O					LWE
	Control					LDQM
	Output					DQi
	Buffer

LDQM

February 2004

K4S64323LH - F(H)E/N/G/C/L/F

Mobile-SDRAM

Package Dimension and Pin Configuration

< Bottom View*1 >

E1

9

8

7

6

5

4

3

2

1

A

e

B

C

D

D

E

F

D

G

H

1

J

K

L

D/2

M

N

P

R

E

E/2

A

A1

Substrate(2Layer)		b		z

< Top View*2 >

#A1 Ball Origin Indicator

XXXX-K4S64323LH	Week SAMSUNG

< Top View*2 >

90Ball(6x15) FBGA

1

2

3

7

8

9

A

DQ26

DQ24

VSS

VDD

DQ23

DQ21

B

DQ28

VDDQ

VSSQ

VDDQ

VSSQ

DQ19

C

VSSQ

DQ27

DQ25

DQ22

DQ20

VDDQ

D

VSSQ

DQ29

DQ30

DQ17

DQ18

VDDQ

E

VDDQ

DQ31

NC

NC

DQ16

VSSQ

F

VSS

DQM3

A3

A2

DQM2

VDD

G

A4

A5

A6

A10

A0

A1

H

A7

A8

NC

NC

BA1

NC

J

CLK

CKE

A9

BA0

CS

RAS

K

DQM1

NC

NC

DQM0

CAS

WE

L

VDDQ

DQ8

VSS

VDD

DQ7

VSSQ

M

VSSQ

DQ10

DQ9

DQ6

DQ5

VDDQ

N

VSSQ

DQ12

DQ14

DQ1

DQ3

VDDQ

P

DQ11

VDDQ

VSSQ

VDDQ

VSSQ

DQ4

R

DQ13

DQ15

VSS

VDD

DQ0

DQ2

Pin Name

Pin Function

CLK

System Clock

Chip Select

CS

CKE

Clock Enable

A0 ~ A10

Address

BA0 ~ BA1

Bank Select Address

Row Address Strobe

RAS

Column Address Strobe

CAS

Write Enable

WE

DQM0 ~ DQM3

Data Input/Output Mask

DQ0 ~ 31

Data Input/Output

VDD/VSS

Power Supply/Ground

VDDQ/VSSQ

Data Output Power/Ground

[Unit:mm]

Symbol

Min

Typ

Max

A

-

1.30

1.40

A1

0.30

0.35

0.40

E

-

8.00

-

E1

-

6.40

-

D

-

13.00

-

D1

-

11.20

-

e

-

0.80

-

b

0.40

0.45

0.50

z

-

-

0.10

February 2004

K4S64323LH - F(H)E/N/G/C/L/F			Mobile-SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter		Symbol	Value	Unit
Voltage on any pin relative to Vss		VIN, VOUT	-1.0 ~ 3.6	V
Voltage on VDD supply relative to Vss		VDD, VDDQ	-1.0 ~ 3.6	V
Storage temperature		TSTG	-55 ~ +150	°C
Power dissipation		PD	1.0	W
Short circuit current		IOS	50	mA

NOTES:

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC OPERATING CONDITIONS

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 85°C for Extended, -25 to 70°C for Commercial)

Parameter	Symbol	Min	Typ	Max	Unit	Note
	VDD	2.3	2.5	2.7	V
Supply voltage
	VDDQ	2.3	2.5	2.7	V
		1.65	-	2.7	V	1
Input logic high voltage	VIH	0.8 x VDDQ	-	VDDQ + 0.3	V	2
Input logic low voltage	VIL	-0.3	0	0.3	V	3
Output logic high voltage	VOH	VDDQ -0.2	-	-	V	IOH = -0.1mA
Output logic low voltage	VOL	-	-	0.2	V	IOL = 0.1mA
Input leakage current	ILI	-10	-	10	uA	4

NOTES :

1.Samsung can support VDDQ 2.5V(in general case) and 1.8V(in specific case) for VDD 2.5V products.

Please contact to the memory marketing team in Samsung Electronics when considering the use of VDDQ 1.8V(Min 1.65V).

2.VIH (max) = 3.0V AC.The overshoot voltage duration is ≤ 3ns.

3.VIL (min) = -1.0V AC. The undershoot voltage duration is ≤ 3ns.

4.Any input 0V ≤ VIN ≤ VDDQ.

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.

5.Dout is disabled, 0V ≤ VOUT ≤ VDDQ.

CAPACITANCE (VDD = 2.5V, TA = 23°C, f = 1MHz, VREF =0.9V ± 50 mV)

Pin

Symbol

Min

Max

Unit

Note

Clock

CCLK

-

4.0

pF

CKE

CIN

-

4.0

pF

RAS,

CAS,

WE,

CS,

DQM

CIN

-

4.0

pF

Address

CADD

-

4.0

pF

DQ0 ~ DQ31

COUT

-

6.0

pF

February 2004