Samsung BN44-00517C Schematic
General Description Product Summary
V
A
C
C
A
AOD4184A
40V N-Channel MOSFET
The AOD4184A combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
. This device is well suited for high
DS(ON)
current load applications.
DS
ID (at VGS=10V)
R
R
(at VGS=10V)
DS(ON)
(at VGS = 4.5V)
DS(ON)
40V
50A
< 7mΩ
< 9.5mΩ
100% UIS Tested
100% Rg Tested
TO252
DPAK
Top View
D
G
Absolute Maximum Ratings T
A
Drain-Source Voltage 40
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
TC=25°C
=100°C
T
C
C
=25°C
T
A
T
=70°C
A
Avalanche Current
Avalanche energy L=0.1mH
=25°C
T
C
Power Dissipation
Power Dissipation
B
=100°C
C
T
=25°C
A
A
T
=70°C
A
Junction and Storage Temperature Range -55 to 175 °C
Bottom View
D
S
G
S
=25°C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
I
DSM
IAS, I
AR
EAS, E
AR
P
D
P
DSM
TJ, T
STG
G
Maximum UnitsParameter
50
40
120
13
10
61
50
25T
2.3
1.5
D
S
mJ
W
W
V
V±20Gate-Source Voltage
A
A
A35
Thermal Characteristics
Parameter Typ Max
Maximum Junction-to-Ambient
Maximum Junction-to-Case
D
t ≤ 10s
Steady-State
Steady-State
Symbol
R
θJA
R
θJC
18
44
2.4
22
55
3
Units
°C/W
°C/WMaximum Junction-to-Ambient
°C/W
Rev0 : Sep 2009 www.aosmd.com Page 1 of 6
Symbol
Symbol
Typ
Max
Absolute Maximum Ratings T
=25°C unless otherwise noted
C
C
C
A,G
A,G
AOD4189
TO-252
Top View
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4189 uses advanced trench technology and
design to provide excellent R
charge. With the excellent thermal resistance of the
DPAK package, this device is well suited for high
current load applications.
-RoHS Compliant
-Halogen Free*
D-PAK
D
G
Drain-Source Voltage
T
Continuous Drain
Current
B,H
=25°C
C
T
=100°C
C
Pulsed Drain Current
Avalanche Current
Repetitive avalanche energy L=0.1mH
TC=25°C
B
A
TC=100°C
=25°C
T
A
TA=70°C
Power Dissipation
Power Dissipation
Junction and Storage Temperature Range
with low gate
DS(ON)
Bottom View
S
C
S
G
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
TJ, T
STG
Features
VDS (V) = -40V
I
= -40A (VGS = -10V)
D
R
R
100% UIS Tested!
100% Rg Tested!
< 22mΩ (VGS = -10V)
DS(ON)
< 29mΩ (VGS = -4.5V)
DS(ON)
G
Maximum UnitsParameter
-40
-40
-28
-50
-35
61
62.5
31
2.5
1.6
-55 to 175
D
S
V
V±20Gate-Source Voltage
A
mJ
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Alpha & Omega Semiconductor, Ltd.
D,F
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJC
15 20
41 50
2 2.4
°C/W
°C/W
°C/W
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