ROHM EMH9, IMH9A, UMH9N Schematic [ru]

EMH9 / UMH9N / IMH9A

Transistors

General purpose (dual digital transistors)

EMH9 / UMH9N / IMH9A

zFeatures

1) T wo DTC114Ys chips in a EMT or UMT or SMT
package.

2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.

3) Transistor element s are independent, eliminating
interference.

4) Mounting cost and area can be cut in half.

zStructure

Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)

The following characteristics apply to both DTr

1 and DTr2.

zEquivalent circuit

EMH9 / UMH9N IMH9A

DTr

2

(3) (2) (1)

1

R

R

2

DTr

R

2

R

1

(4) (5) (6)

R1=10kΩ

2

=47kΩ

R

1

DTr

2

(4) (5) (6)

1

R

R

2

DTr

R

2

R

1

(3) (2) (1)

1

=10kΩ

R

2

=47kΩ

R

1

zPackaging specifications

Taping

TN

3000

−−

−−

Type
EMH9
UMH9N
IMH9A

Package
Code
Basic ordering unit (pieces)

T2R

8000

−

zExternal dimensions (Unit : mm)

EMH9

(4)

0.22

(6)

1.2

1.6

0.13

Abbreviated symbol : H9

ROHM : EMT6

UMH9N

ROHM : UMT6
EIAJ : SC-88

)

4

(

)

5

(

0.2

)

6

(

1.25

0.15

0.1Min.

Abbreviated symbol : H9

IMH9A

)

6

(

0.3

)

5

(
)

4

(

1.6

2.8

0.15

0.3to0.6

ROHM : SMT6
EIAJ : SC-74

Abbreviated symbol : H9

T110
3000

−

(3)

0.5

1.0

1.6

(2)(5)

0.5

(1)

0.5

Each lead has same dimensions

)

3

(

0.65

)

2

(

1.3

2.0

)

1

(

0.65

2.1

0.9

0.7

0to0.1

Each lead has same dimensions

)

1

(

0.95

2.9

)

1.9

2

(

0.95

)

3

(

1.1

0.8

0to0.1

Each lead has same dimensions

Rev.A 1/3

EMH9 / UMH9N / IMH9A

Transistors

zAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol

Supply voltage

Input voltage

Output current

Power
dissipation

EMH9,UMH9N 150 (TOTAL)
IMH9A 300 (TOTAL)

V

V

I

C (Max.)

Pd

Junction temperature
Storage temperature

1 120mW per element must not be exceeded.

∗

2 200mW per element must not be exceeded.

∗

Tstg −55 to +150

zElectrical characteristics (Ta = 25°C)

CC

IN

O

I

Tj

Limits

50 V
40

−6
70

100

150

Unit

V

mA

mW

°C
°C

1

∗

2

∗

Parameter Symbol

V

Input voltage

Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

Transition frequency of the device

∗

V

V

O (on)

I

O (off)

G

f

R

R2/R

I (off)

I (on)

I

I

T

I

1

zElectrical characteristic curves

100

50

20

(V)

I (on)

10

5

2

1

500m

INPUT VOLTAGE : V

200m
100m

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

Ta=−40°C

25°C

100°C

OUTPUT CURRENT : I

Fig.1 Input voltage vs. output current
(ON characteristics)

O

(A)

VO=0.3V

Min.

Typ. Max. Unit Conditions

−

−

1.4

−

−

−

68

− 250 − VCE=10V, IE= −5mA, f=100MHz

7

1

3.7

10m

5m
2m

(A)

1m

500µ
200µ

100µ

50µ
20µ

10µ

OUTPUT CURRENT : Io

5µ
2µ

1µ

0.3

−

−

0.30.1

−

0.88

−

−

mA

0.5

−

MHz

10

13

4.7

5.7

Ta=100°C

25°C

−40°C

03

0.5 1 1.5 2 2.5

INPUT VOLTAGE : V

Fig.2 Output current vs. input voltage
(OFF characteristics)

CC

=5V, IO=100µA

V

V

O

=0.3V, IO=1mA

V
I

O/II

V

µA

−

kΩ

=5mA/0.25mA

V

I

=5V

CC

=50V, VI=0V

V

O

=5V, IO=5mA

V

−

−−

1k

I (off)

(V)

VCC=5V

VO=5V

500

I

200
100

50

20
10

5

DC CURRENT GAIN : G

2
1

100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m

Fig.3 DC current gain vs. output
current

∗

Ta=100°C

25°C

−40°C

OUTPUT CURRENT : I

O

(A)

Rev.A 2/3