ROHM UM6J1N Technical data
C
4V Drive Pch MOSFET
UM6J1N
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
zFeatures
1) Two RSU002P03 transistors in a single UMT package.
2) The MOSFET elements are independent, eliminating
mutual interference.
3) Mounting cost and area can be cut in half.
zApplications
Switching
zPackaging specifications
Package
Type
UM6J1N
Code
Basic ordering unit (pieces)
zInner circuit
Taping
TN
3000
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
Each terminal mounted on a recommended land
∗2
Symbol
DSS
GSS
D
DP
P
D
∗1
∗2
Limits Unit
−30
±20
±0.2
±0.4
150
mW / ELEMENT120
150
−55 to +150
zThermal resistance
Parameter
hannel to ambient
∗ Each terminal mounted on a recommended land
Symbol Limits Unit
∗
Rth(ch-a)
833
1042
°C/W / ELEMENT
UMT6
(6)
∗2
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
VV
VV
AI
AI
mW / TOTAL
°CTch
°CTstg
°C/W / TOTAL
1pin mark
∗1
2.0
1.3
0.65
0.65
(5)
(4)
(6)
2.1
1.25
(3)
(1)
(2)
0.2
Abbreviated symbol : J01
(5)
(2)
0.15
Each lead has same dimensions
(4)
∗1
(3)
0.9
0.7
∗2
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
0.1Min.
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○
2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.04 - Rev.A
0
CAPACITANCE : C (pF)
e
1
SWITCHING TIME : t (ns)
1
cs
cs
0
STATIC DRAIN-SOURCE
.
.6
Source-Drain Voltage
UM6J1N
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
∗ Pulsed
zBody diode characteristics (source-drain)
Parameter Symbol
∗Pulsed
zElectrical characteristic curves
100
10
1
0.01
0.1 1 10 10
DRAIN-SOURCE VOLTAGE : −VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltag
Ta=25°C
f=1MHz
V
(A)
D
1
Ta=125°C
0.1
75°C
25°C
−25°C
VDS= −10V
Pulsed
Min.−Typ. Max.
I
GSS
− ±10 µAV
−30 −−VI
I
DSS
GS (th)
DS (on)
Y
C
C
C
t
d (on)
t
d (off)
−−−1 µAV
−1.0 −−2.5 V V
− 0.9 1.4 I
∗
− 1.4 2.1 ΩΩI
− 1.6 2.4 Ω I
∗
0.2 −−SV
fs
− 30 − pF V
iss
− 4
oss
−
rss
∗
∗
t
r
∗
∗
t
f
5
8
−
5
−
30
−
40
−−ns
Min. Typ. Max.
∗
V
SD
−−−1.2 V IS= −0.1A, VGS=0VForward voltage
1000
GS
=0V
Ciss
Crss
Coss
100
10
1
0.01
Fig.2 Switching Characteristics
20
(Ω)
DS
15
10
Unit
GS
= −1mA, VGS=0V
D
DS
DS
= −0.2A, VGS= −10V
D
= −0.15A, VGS= −4.5V
D
= −0.15A, VGS= −4V
D
DS
DS
− pF V
GS
− pF f=1MHz
− ns
− ns
− ns
VDD −15V
ID= −0.15A
GS
V
L
100Ω
R
G
=10Ω
R
Unit
tf
td(off)
td(on)
tr
0.1
DRAIN CURRENT : −ID (A)
ID= −125mA
ID= −200mA
Conditions
=±20V, VDS=0V
= −30V, VGS=0V
= −10V, ID= −1mA
= −10V, ID= −0.15A
= −10V
=0V
= −10V
Conditions
Ta=25°C
DD= −15V
V
GS= −10V
V
G=10Ω
R
Pulsed
Ta=25°C
Pulsed
(V)
GS
GATE-SOURCE VOLTAGE : −V
(A)
S
8
Ta=25°C
DD
= −15V
V
7
D
=−200mA
I
G
=10Ω
R
6
Pulsed
5
4
3
2
1
0
0.2 0.4 0.6 0.8
0
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristi
1
Ta=125°C
75°C
25°C
0.1
−25°C
Data Sheet
VGS=0V
Pulsed
0.01
DRAIN CURRENT : −I
0.001
1.4 1.6 2.01.8 2.8 3.0 3.2 3.42.2 2.4 2.6
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.4 Typical Transfer Characteristi
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2009 ROHM Co., Ltd. All rights reserved.
5
ON-STATE RESISTANCE : R
0
0
21
46819357
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.5 Static Drain-Source
REVERSE DRAIN CURRENT : −I
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.6 Reverse Drain Current vs.
On-State Resistance vs
Gate-Source Voltage
2/3
2009.04 - Rev.A
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