ROHM UM6J1N Technical data

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4V Drive Pch MOSFET

UM6J1N

zStructure zDimensions (Unit : mm) Silicon P-channel MOSFET

zFeatures

1) Two RSU002P03 transistors in a single UMT package.

2) The MOSFET elements are independent, eliminating mutual interference.

3) Mounting cost and area can be cut in half.

zApplications

Switching

zPackaging specifications

Package

Type

UM6J1N

Code Basic ordering unit (pieces)

zInner circuit

Taping

3000

zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for Tr1 and Tr2.>

Parameter Drain-source voltage Gate-source voltage

Drain current

Continuous

Pulsed Total power dissipation Channel temperature

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

Each terminal mounted on a recommended land

∗2

Symbol

DSS GSS

∗1

∗2

Limits Unit

−30

±20 ±0.2 ±0.4

150

mW / ELEMENT120

150

−55 to +150

zThermal resistance

Parameter

hannel to ambient

∗ Each terminal mounted on a recommended land

Symbol Limits Unit

∗

Rth(ch-a)

833

1042

°C/W / ELEMENT

UMT6

(6)

∗2

(1)

∗1 ESD PROTECTION DIODE ∗2 BODY DIODE

VV VV AI AI

mW / TOTAL

°CTch °CTstg

°C/W / TOTAL

1pin mark

∗1

2.0

1.3

0.65

(5)

(4)

(6)

2.1

1.25

(3)

(1)

(2)

0.2

Abbreviated symbol : J01

(5)

(2)

0.15

Each lead has same dimensions

(4)

∗1

(3)

0.9

0.7

∗2

(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain

0.1Min.

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CAPACITANCE : C (pF)

SWITCHING TIME : t (ns)

STATIC DRAIN-SOURCE

Source-Drain Voltage

UM6J1N

zElectrical characteristics (Ta=25°C) <It is the same characteristics for Tr1 and Tr2.>

Parameter Symbol Gate-source leakage Drain-source breakdown voltage

(BR) DSS

Zero gate voltage drain current Gate threshold voltage

Static drain-source on-state resistance

Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time

∗ Pulsed

zBody diode characteristics (source-drain)

Parameter Symbol

∗Pulsed

zElectrical characteristic curves

100

0.01

0.1 1 10 10

DRAIN-SOURCE VOLTAGE : −VDS (V)

Fig.1 Typical Capacitance

vs. Drain-Source Voltag

Ta=25°C f=1MHz V

(A)

Ta=125°C

0.1

75°C 25°C

−25°C

VDS= −10V Pulsed

Min.−Typ. Max.

GSS

− ±10 µAV

−30 −−VI

DSS

GS (th)

DS (on)

C C

d (on)

d (off)

−−−1 µAV

−1.0 −−2.5 V V

− 0.9 1.4 I

∗

− 1.4 2.1 ΩΩI

− 1.6 2.4 Ω I

∗

0.2 −−SV

− 30 − pF V

iss

− 4

oss

−

rss

∗

5 8

−

−−ns

Min. Typ. Max.

∗

−−−1.2 V IS= −0.1A, VGS=0VForward voltage

1000

=0V

Ciss

Crss Coss

100

0.01

Fig.2 Switching Characteristics

(Ω)

Unit

= −1mA, VGS=0V

DS DS

= −0.2A, VGS= −10V

= −0.15A, VGS= −4.5V

= −0.15A, VGS= −4V

DS DS

− pF V

− pF f=1MHz

− ns

VDD −15V

ID= −0.15A

100Ω

=10Ω

Unit

td(off)

td(on)

0.1

DRAIN CURRENT : −ID (A)

ID= −125mA

ID= −200mA

Conditions

=±20V, VDS=0V

= −30V, VGS=0V = −10V, ID= −1mA

= −10V, ID= −0.15A = −10V =0V

= −10V

Conditions

Ta=25°C

DD= −15V

GS= −10V

G=10Ω

R Pulsed

Ta=25°C Pulsed

(V)

GATE-SOURCE VOLTAGE : −V

(A)

Ta=25°C

= −15V

=−200mA

=10Ω

Pulsed

1 0

0.2 0.4 0.6 0.8

TOTAL GATE CHARGE : Qg (nC)

Fig.3 Dynamic Input Characteristi

Ta=125°C

75°C 25°C

0.1

−25°C

Data Sheet

VGS=0V Pulsed

0.01

DRAIN CURRENT : −I

0.001

1.4 1.6 2.01.8 2.8 3.0 3.2 3.42.2 2.4 2.6

GATE-SOURCE VOLTAGE : −VGS (V)

Fig.4 Typical Transfer Characteristi

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ON-STATE RESISTANCE : R

46819357

GATE-SOURCE VOLTAGE : −VGS (V)

Fig.5 Static Drain-Source

REVERSE DRAIN CURRENT : −I

0.01

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1

SOURCE-DRAIN VOLTAGE : −VSD (V)

Fig.6 Reverse Drain Current vs.

On-State Resistance vs

Gate-Source Voltage

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STATIC DRAIN-SOURCE

)

UM6J1N

(Ω)

DS (on)

Ta=125°C

75°C 25°C

−25°C

VGS= −10V Pulsed

(Ω)

DS (on)

Ta=125°C

75°C 25°C

−25°C

VGS= −4.5V Pulsed

(Ω)

DS (on)

Ta=125°C

75°C 25°C

−25°C

VGS= −4V Pulsed

Data Sheet

ON-STATE RESISTANCE : R

0.1

0.01

DRAIN CURRENT : −ID (A)

0.1

Fig.7 Static Drain-Source

On-State Resistance

vs. Drain Current ( Ι )

ON-STATE RESISTANCE : R

0.1

0.01

DRAIN CURRENT : −ID (A)

0.1

Fig.8 Static Drain-Source

On-State Resistance

vs. Drain Current ( ΙΙ )

ON-STATE RESISTANCE : R

0.1

0.01

DRAIN CURRENT : −ID (A)

Fig.9 Static Drain-Source

On-State Resistance

vs. Drain Current ( ΙΙΙ )

(Ω)

DS (on)

ON-STATE RESISTANCE : R

0.01

DRAIN CURRENT : −ID (A)

VGS= −4V

VGS= −4.5V

0.1

Fig.10 Static Drain-Source

On-State Resistance

vs. Drain Current ( Ι

VGS= −10V

Ta=25°C Pulsed

zNotice

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.

0.1

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Notes

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Notice

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ROHM UM6J1N Technical data

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