ROHM RN731V Datasheet

Diodes

PIN diode

RN731V

RN731V

Applications

!

External dimensions

!!!!

VHF/UHF band variable attenuators and AGC.

Features

!

1) Small surface mounting type. (UMD2)

2) Low high-frequency forward resistance (r
capacitance (C

T

).

3) High reliability.

F

) / low

2.5±0.2

1.7±0.1

1.25±0.1

ROHM : UMD2

Construction

!

EIAJ : SC - 76
JEDEC : SOD - 323

Silicon diffusion junction

Absolute maximum ratings

!!!!

Parameter Symbol Limits Unit

DC reverse voltage V
DC forward current I
Power dissipation 100 mW
Junction temperature Tj 125 ˚C
Storage temperature Tstg −55∼+125 ˚C

(Ta=25°C)

R

F

Pd

50 V
50 mA

9

0.3±0.2

CATHODE MARK

+0.2

0.7

−0.1

(Units : mm)

2.5±0.2

1.7±0.1

+0.1

0.1

−0.05

1.25±0.1

∗ There are two different markings.

9

0.3±0.2

CATHODE MARK

+0.2

0.7

−0.1

+0.1

0.1

−0.05

Electrical characteristics

!!!!

(Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

F

Forward voltage
Reverse current
Capacitance between terminals −−0.4 pF V
Forward operating resistance

V

I

R

T

C

F

r

−−1.0 V IF=50mA

−−100 nA VR=50V

−−7 Ω IF=10mA, f=100MHz

R

=35V, f=1MHz

Diodes

Electrical characteristic curves

!!!!

100m

A)

(

F

10m

1m

FORWARD CURRENT : I

0 0.5 1.0

Fig.1 Forward characteristics

1.0

pF)

(

T

0.7

0.5

V

R

=

0.4

0.3

V

R

=

0.2

CAPACITANCE BETWEEN TERMINALS : C

0.1
100 200 300 400 500 600

Fig 4 Capacitance between

terminals characteristics (II)

125˚C

75˚C

FORWARD VOLTAGE : V

0V

3V

HIGH FREQUENCY : f (MHz)

25˚C

−25˚C

F

(

V)

(Ta=25°C)

10µ

1µ

A)

100n

(

R

10n

1n

100p

10p

REVERSE CURRENT : I

1p

10 20 30 40 50 60 70

0

REVERSE : VOLTAGE : V

Fig.2 Reverse characteristics

(Ω)

F

100

DYNAMIC FOWARD RESISTANCE : r

f=1MHz

f=100MHz

10

1.0

FORWARD CURRENT : I

Fig.5 High frequency characteristics

RN731V

1.0

pF)

(

T

125˚C

75˚C

25˚C

R

(

V)

f=10MHz

0.1

1.0 10

F

(

mA)

0.7

0.5

0.4

0.3

0.2

CAPACITANCE BETWEEN TERMINALS : C

0.1
10 20 30

REVERSE VOLTAGE : V

Fig.3 Capacitance between

terminals characteristics (I)

20

(Ω)

F

I

F

=

10

DYNAMIC FORWARD RESISTANCE : r

10 100 1000

2mA

FORWARD CURRENT : f (MHz)

Fig.6 Forward operating

resistance characteristics

f=1MHz

f=10MHz

R (

V)

100

80

60

40

Io CURRENT (%)

20

0

0

25 50 75 100 125

AMBIENT TEMPERATURE : Ta (˚C)

Fig.7 Derating curve

(mounting on glass epoxy PCBs)