Diodes
Switching diode
RLS-73
RLS-73
Applications
!
External dimensions
!!!!
High speed switching
Features
!
1) Small surface mounting type. ( LLDS )
2) High speed. (t
rr
=1.2ns Typ.)
3) High reliability.
Construction
!
Silicon epitaxial planar
Absolute maximum ratings
!!!!
Paramater Symbol Limits Unit
Peak reverse voltage V
DC reverse voltage
Peak forward current I
Mean rectifying current I
Surge current (1s)
Power dissipation P 300 mW
Junction temperature T
Storage temperature T
(Ta=25°C)
RM
R
V
FM
O
I
surge
j
stg
90
80
400
130
600
175 ˚C
ROHM : LLDS
EIAJ : −
JEDEC : LL-34
V
V
mA
mA
mA
˚C−65∼+175
φ1.4±0.1
(Units : mm)
CATHODE BAND (YELLOW)
0.40.4
+0.2
3.4
−0.1
φ1.5Max.
Electrical characteristics
!!!!
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
(Ta=25°C)
F
V
R
I
T
C
rr
t
−−1.2 V I
−−0.5
−
− 2
µA
pF V
−−4nsV
F
=
100mA
V
R
=
80V
R
=
0.5V, f=1MHz
R
=
6V, I
F
=
10mA, R
L
=
50Ω
Diodes
Electrical characteristic curves
!!!!
100
50
(mA)
20
F
10
5
2
1
FORWARD CURRENT : I
0.5
0.2
0
75˚C
25˚C
−25˚C
Ta=125˚C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE : VF (V)
Fig. 1 Forward characteristics
(Ta=25°C)
0.1m
(nA)
R
100n
REVERSE CURRENT : I
1m
10µ
1µ
10n
1n
0 20 40 60 80 100 120 140
Ta=125˚C
Ta=75˚C
Ta=−25˚C
REVERSE VOLTAGE : VR (V)
Fig. 2 Reverse characteristics
3.0
(pF)
T
2.5
2.0
1.5
1.0
0.5
0
CAPACITANCE BETWEEN TERMINALS : C
51525
0
10 20 30
REVERSE VOLTAGE : VR (V)
Fig. 3 Capacitance between
terminals characteristics
RLS-73
f=1MHz
5
(ns)
rr
4
3
2
1
REVERSE RECOVERY TIME : t
0
4 8 12 16 20
0
FORWARD CURRENT : I
Fig. 4 Reverse recovery time
V
R =
6V
rr
=
1/10I
R
I
F
(
mA)
10
5
(A)
surge
2
1
0.5
SURGE CURRENT : I
0.2
0.1
0.01 0.1 1 10 100 1000
Fig.5 Surge current characteristics
characteristcs
PULSE GENERATOR
OUTPUT 50Ω
0.01µF
5kΩ
D.U.T.
SAMPLING
50
Ω
OSCILLOSCOPE
Fig.6 Reverse recovery time (trr) measurement circuit
PULSE
Single pulse
PULSE WIDTH : Tw (ms)