ROHM RLS4148, RLS4150, RLS4448 Schematics

RLS4148 / RLS4150 / RLS4448

Diodes

Switching diode

RLS4148 / RLS4150 / RLS4448

∗

This product is available only outside of Japan.

Applications

!!!!

High-speed switching

Features

!!!!

1) Small surface mounting type. (LLDS)

2) High speed.

3) For surface mounting.

4) High reliability.

Construction

!!!!

Silicon epitaxial planar

Absolute maximum ratings

!!!!

Type

RLS4148
RLS4150

RLS4448

V

(V)

100

50

100

RM

(Ta = 25°C)

V

R

(V)

75
50

75

I

(mA)

450
600

450

External dimensions

!!!!

φ1.4±0.1

(Units : mm)

CATHODE BAND

0.40.4

+0.2

3.4

−0.1

φ1.5Max.

ROHM : LLDS
EIAJ : −
JEDEC : LL-34

I

FM

I

O

(mA)

150
200

150

(mA)

200
250

200

FSM

I

F

1µs

(A)

P

(mW)

2
4

2

500
500

500

(°C)

200
200

200

Tj

Topr

(°C)

−65~+200

−65~+200

−65~+200

Tstg
(°C)

−65~+200

−65~+200

−65~+200

Electrical characteristics

!!!!

Type

RLS4148

RLS4150

RLS4448

The upper figure is the minimum VF and the lower figure is the maximum VF value.

@

1mA

0.54

0.62

(Ta = 25°C)

VF (V)

@

5mA@10mA@50mA@100mA@200mA

1.0

0.66

0.76

0.82

0.87

0.86

0.62

0.74

0.72

0.92

1.0

B
@

5µA

75

1.0

V

(V)Min.

−

−

@

100µA

100

50

100

25°C

@

0.025

5.02075

0.1

0.025

5.0

I

R

(µA)Max.

VR (V)

50
20

75

@

50.0

100.0

50.0

150°C

V

t

rr

Cr (pF)

V

R

f=1MHz

R

(V)

20

50

20

4

2.5

4

(ns)

V

R

I

F

=10mA

R

L

=100Ω

=6V

4

4

4

=0

Diodes

Electrical characteristic curves

!!!!

100

50

(mA)

20

F

10

5

2
1

0.5

FORWARD CURRENT : I

0.2
0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE : VF (V)

Fig.1 Forward characteristics

°C

°C

°C

Ta=125°C

Ta=75

Ta=−25

Ta=25

(Ta = 25°C)

3 000

(nA)

1 000

R

300

100

REVERSE CURRENT : I

RLS4148 / RLS4150 / RLS4448

100°C

50°C

30

10

3

0

20 40 60 80 100 120

REVERSE VOLTAGE : VR (V)

Fig.2 Reverse characteristics

Ta=25°C

70°C

3.0

(pF)

T

2.5

2.0

1.5

1.0

0.5

0

CAPACITANCE BETWEEN TERMINALS : C

51525

0

10 20 30

REVERSE VOLTAGE : VR (V)

Fig.3 Capacitance between

terminals characteristics

f=1MHz

3

(ns)

rr

2

1

REVERSE RECOVERY TIME : t

0

0

10 20 30

FORWARD CURRENT : IF (mA)

Fig.4 Reverse recovery time

characteristics

0.01µF

PULSE GENERATOR

OUTPUT 50Ω

INPUT

100ns

100

V

rr

I

R

=6V

=1/10I

50

R

(A)

surge

20

10

5

SURGE CURRENT : I

2

1

0.1 1 10 100 1 000 10 000
PULSE WIDTH : Tw (ms)

PULSE
Single pulse

Fig.5 Surge current characteristics

D.U.T.

5Ω

SAMPLING

50Ω

OSCILLOSCOPE

OUTPUT

R

I

t

rr

0

R

0.1I

Fig.6 Reverse recovery time (trr) measurement circuit

Appendix

No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.

Notes

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.0