ROHM RLS4148, RLS4150, RLS4448 Datasheet

RLS4148 / RLS4150 / RLS4448

Diodes

Switching diode

RLS4148 / RLS4150 / RLS4448

∗

This product is available only outside of Japan.

Applications

!!!!

High-speed switching

Features

!!!!

1) Small surface mounting type. (LLDS)

2) High speed.

3) For surface mounting.

4) High reliability.

Construction

!!!!

Silicon epitaxial planar

Absolute maximum ratings

!!!!

Type

RLS4148
RLS4150

RLS4448

V

(V)

100

50

100

RM

(Ta = 25°C)

V

R

(V)

75
50

75

I

(mA)

450
600

450

External dimensions

!!!!

φ1.4±0.1

(Units : mm)

CATHODE BAND

0.40.4

+0.2

3.4

−0.1

φ1.5Max.

ROHM : LLDS
EIAJ : −
JEDEC : LL-34

I

FM

I

O

(mA)

150
200

150

(mA)

200
250

200

FSM

I

F

1µs

(A)

P

(mW)

2
4

2

500
500

500

(°C)

200
200

200

Tj

Topr

(°C)

−65~+200

−65~+200

−65~+200

Tstg
(°C)

−65~+200

−65~+200

−65~+200

Electrical characteristics

!!!!

Type

RLS4148

RLS4150

RLS4448

The upper figure is the minimum VF and the lower figure is the maximum VF value.

@

1mA

0.54

0.62

(Ta = 25°C)

VF (V)

@

5mA@10mA@50mA@100mA@200mA

1.0

0.66

0.76

0.82

0.87

0.86

0.62

0.74

0.72

0.92

1.0

B
@

5µA

75

1.0

V

(V)Min.

−

−

@

100µA

100

50

100

25°C

@

0.025

5.02075

0.1

0.025

5.0

I

R

(µA)Max.

VR (V)

50
20

75

@

50.0

100.0

50.0

150°C

V

t

rr

Cr (pF)

V

R

f=1MHz

R

(V)

20

50

20

4

2.5

4

(ns)

V

R

I

F

=10mA

R

L

=100Ω

=6V

4

4

4

=0

Diodes

Electrical characteristic curves

!!!!

100

50

(mA)

20

F

10

5

2
1

0.5

FORWARD CURRENT : I

0.2
0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE : VF (V)

Fig.1 Forward characteristics

°C

°C

°C

Ta=125°C

Ta=75

Ta=−25

Ta=25

(Ta = 25°C)

3 000

(nA)

1 000

R

300

100

REVERSE CURRENT : I

RLS4148 / RLS4150 / RLS4448

100°C

50°C

30

10

3

0

20 40 60 80 100 120

REVERSE VOLTAGE : VR (V)

Fig.2 Reverse characteristics

Ta=25°C

70°C

3.0

(pF)

T

2.5

2.0

1.5

1.0

0.5

0

CAPACITANCE BETWEEN TERMINALS : C

51525

0

10 20 30

REVERSE VOLTAGE : VR (V)

Fig.3 Capacitance between

terminals characteristics

f=1MHz

3

(ns)

rr

2

1

REVERSE RECOVERY TIME : t

0

0

10 20 30

FORWARD CURRENT : IF (mA)

Fig.4 Reverse recovery time

characteristics

0.01µF

PULSE GENERATOR

OUTPUT 50Ω

INPUT

100ns

100

V

rr

I

R

=6V

=1/10I

50

R

(A)

surge

20

10

5

SURGE CURRENT : I

2

1

0.1 1 10 100 1 000 10 000
PULSE WIDTH : Tw (ms)

PULSE
Single pulse

Fig.5 Surge current characteristics

D.U.T.

5Ω

SAMPLING

50Ω

OSCILLOSCOPE

OUTPUT

R

I

t

rr

0

R

0.1I

Fig.6 Reverse recovery time (trr) measurement circuit