ROHM RLS245 Datasheet
Diodes
Switching diode
RLS245
RLS245
Applications
!
External dimensions
!!!!
High voltage switching
General purpose rectification
Features
!
1) Small surface mounting type. (LLDS)
RM
2) V
=250V guaranteed.
3) High reliability
ROHM : LLDS
Construction
!
Silicon epitaxial planar
Absolute maximum ratings
!!!!
Parameter Symbol Limits Unit
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (1s)
Power dissipation 300 mW
Junction temperature 175 °C
Storage temperature °C
(Ta=25°C)
V
RM
V
R
FM
I
I
O
Isurge 1000 mA
P
Tj
Tstg
250 V
220 V
625 mA
200 mA
−65~+175
EIAJ : −
JEDEC : LL-34
φ1.4±0.1
(Units : mm)
CATHODE BAND (WHITE)
0.40.4
+0.2
3.4
−0.1
φ1.5Max.
Electrical characteristics
!!!!
Parameter Symbol Min. Max. Unit Conditions
Forward voltage
Reverse current
Capacitance between terminals −−3pFV
Reverse recovery time
(Ta=25°C)
V
C
Typ.
F
R
I
T
rr
t
−−1.5 V IF=200mA
−−10 µAVR=220V
R
=0V, f=1MHz
−−75 ns IF=20mA, IR=20mA, RL=50Ω
Diodes
Electrical characteristic curves
!!!!
200
100
50
(mA)
F
20
10
5
2
1
FORWARD CURRENT : I
0.5
0.2
˚C
Ta=125˚C
75
25˚C
25˚C
−
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE : VF (V)
Fig. 1 Forward characteristics
(Ta=25°C)
10µ
(A)
R
100n
REVERSE CURRENT : I
10n
100˚C
1µ
0
50 100 150 200 250 300 350
75˚C
50˚C
Ta=25˚C
REVERSE VOLTAGE : VR (V)
Fig. 2 Reverse characteristics
RLS245
1.1
(pF)
T
1.0
0.9
0.8
0.7
0.6
012345
CAPACITANCE BETWEEN TERMINALS : C
REVERSE VOLTAGE : VR (V)
Fig. 3 Capacitance between
terminals characteristics
140
(ns)
120
rr
100
80
60
40
20
REVERSE RECOVERY TIME : t
0
5 101520253035
0
FORWARD CURRENT : IF (mA)
Fig. 4 Reverse recovery time
characteristics
PULSE GENERATOR
OUTPUT 50Ω
0.01µF
D.U.T.
5kΩ
Fig. 6 Reverse recovery time (t
=10mA
=1mA
12
(A)
10
8
6
4
SURGE CURRENT : Isurge
2
0
R
I
I
rr
14
Fig.5 Surge current characteristics
SAMPLING
50
Ω
OSCILLOSCOPE
rr
) measurement circuit
1 10 100 1000
PULSE WIDTH : Tw (ms)
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