RLD-78PP-G1 / RLD-78NP-G1
Laser Diodes
Title AlGaAs, double-heterojunction,
visible laser diodes
RLD-78PP-G1 / RLD-78NP-G1
RLD-78PP-G1 and RLD-78NP-G1 are the semiconductor laser developed for the laser beam printer application.
We have achieved the very small variations of the optical characteristics and low droop by ROHM original Epitaxial
growth technology using Molecular Beam Epitaxy.
In addition, they have the appropriate characteristics for sensor application as well.
Applications
!!!!
Laser beam printers
Sensors
Features
!
1) Minimum variation of radiation
beam angle.
2) Low droop.
3) High stability wave length.
4) Can be driven by single power
supply.
Absolute maximum ratings
!!!!
Parameter Symbol
Output
Laser
PIN photodiode
Reverse
voltage
Operating temperature
Storage temperature
(Tc=25°C)
Po
R
V
R(PIN)
V
Topr
Tstg
External dimensions
!!!!
90˚±2˚
0.4±0.1
1.0±0.1
φ5.6
2.3
(1.27)
1.2±0.1
6.5±0.5
(3)
Limits
5
2
30
-10~+60
-40~+85
(Units : mm)
+0
−0.025
3−φ0.45
(2)
(1)
Unit
mW
V
V
˚C
˚C
φ1.0Min.
φ3.6
Glass window
Chip
φ4.4+0
P
T
y
p
e
N
T
y
p
e
(3)
L.D. P.D.
(1) (2)
(3)
L.D. P.D.
(1) (2)
Laser Diodes
Electrical and optical characteristics
!!!!
RLD-78PP-G1 / RLD-78NP-G1
(Ta=25°C)
Parameter Symbol
Threshold current
Operating current
Operating voltage
Differential efficiency
Monitor current
Parallel divergence
angle
Perpendicular
divergence angle
Parallel deviation angle
Perpendicular deviation
angle
Emission point
accuracy
Peak emission
wavelength
Droop
θ
//
and
θ ⊥
*
are defined as the angle within which the intensity is 50% of the peak value.
I
th
I
op
V
η
I
m
θ
θ
∆φ
∆φ ⊥
∆X
∆Y
∆Z
λ
∆P
Min.
Typ.
Max.
10
25
15
45
op
//
⊥
-
1.9
0.1
0.2
0.3
0.55
*
8
11
*
25
30
-
//
-
-
-
-
770
-
±80
--
795
785
5
45
65
2.3
0.3
0.9
15
38
±2
±3
10
Unit
mA
mA
V
mW/mA
mA
deg
deg
deg
deg
µm
nm
%
Conditions
-
Po=
3mW
Po=
3mW
2mW
I(3mW)−I(1mW
Po=
3mW
Po=
3mW
Po=
3mW
Po=
3mW
)
Electrical and optical curves
!!!!
5
25˚C
40˚C
50˚C
60˚C
10
20 30 40 50 60 70 80
OPERATING CURRENT : IF (mA)
OPTICAL POWER : PO (mW)
4
3
2
1
0
Fig. 1 Optical output vs. operating current
100
90
80
70
mA)
(
60
th
50
40
30
20
THRESHOLD CURRENT : I
10
-10 0 10-20 20 30 40 50 60 70
PACKAGE TEMPERATURE : T
Fig. 2 Dependence of threshold current
on temperature
1.0
θ direction
θ direction
0.5
RELATIVE OPTICAL INTENSITY
0
-40
C
(˚C)
040
ANGLE (deg)
Fig. 3 Far field pattern