ROHM RHU002N06 Schematic [ru]

RHU002N06

Transistors

Switching (60V, 200mA)

RHU002N06

zFeatures

1) Low on-resistance.

2) High ESD.

3) High-speed switching.

4) Low-voltage drive (4V).

5) Easily designed drive circuits.

6) Easy to use in parallel.

zStructure

Silicon N-channel
MOSFET transistor

zEquivalent circuit

(3)

zExternal dimensions (Unit : mm)

)

1

(

0.65

)

2

1.3

(

0.65

0.2

0.9

0.7

Each lead has same dimensions

ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323

)

3

(

0.3

1.25

2.1

0.15

0.1Min.

0~0.1

Abbreviated symbol : KP

2.0

(1) Source
(2) Gate
(3) Drain

(2)

(1)

Source

(2)

Gate Protection Diode.

∗

∗

A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when fixed voltages are
exceeded.

(1)

(3)

Gate
Drain

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature
Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended

Symbol Limits Unit

V
V

I

P

Tch

Tstg ˚C

DSS

GSS

D

DP

I

S

I

SP

60 V

±20

200I

∗1

200

∗1

∗2

D

800
200
150

V
mA
mA800
mA
mA

mW

˚C

−55 to +150

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RHU002N06

Transistors

zElectrical characteristics (Ta=25°C)

Parameter

Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage

Drain-source on-state resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗1 P

W

≤300µs, Duty cycle≤1%

∗2 Pulsed

zPackaging specifications

Package
Code

Type

Basic ordering unit (pieces)

RHU002N06

zElectrical characteristic curves

0.8
10V

0.7

8V

0.6

(A)

D

0.5

0.4

0.3

0.2

DRAIN CURRENT : I

0.1

0.0

0.0 0.5 1.0 1.5 2.0 2.5 4.03.0 3.5
DRAIN-SOURCE VOLTAGE : V

6V

Fig.1 Typical Output Characteristics

Ta=25°C
Pulsed

4V

3.5V

VGS=3V

DS

(V)

Symbol

V

(BR) DSS

V

R

DS (on)

l Yfs l

t

d (on)

t

d (off)

Q
Q
Q

Min.

Typ.

Max.

I

GSS

I

DSS

GS (th)

C

iss

oss

C
C

rss

∗

t

r

∗

t

f

g

gs

gd

−

60

−

1

−

1

∗

−

1

∗

100

−

−

−

2

∗

−

2

−

2

∗

−

2

−

2

∗

−

2

∗

−

2

∗

−

±10

−

−

−

2.5

−

1.7

2.4

2.8 4.0

−

15

8
4
6

5
12
95

2.2 4.4

0.6

0.3

−

1

−

−

−

−

−

−

−

−

−

−

Taping

T106
3000

1

VDS=

10V

Pulsed

(A)

D

0.1

0.01

DRAIN CURRENT : I

0.001

Fig.2 Typical Transfer Characteristics

Ta=−25˚C

25˚C
75˚C

125˚C

1.00.50.0

1.5 2.0 2.5 3.0 3.5

GATE-SOURCE VOLTAGE : V

Unit

V

GS

µA

V

I

D

=10µA, VGS=0V

V

DS

µA

DS

V

V

I

D

=200mA, VGS=10V

Ω

D

=200mA, VGS=4V

I
VDS=10V, ID=200mA

mS

pF

V

DS

VGS=0V

pF

f=1MHz

pF
ns

D

=100mA, V

I

ns

VGS=10V
RL=300Ω

ns

GS

R

ns
nC

VDD 30V
V

GS

nC

D

=200mA

I

nC

4.54.0

GS

(V)

Test Conditions

=±20V, VDS=0V

=60V, VGS=0V
=10V, ID=1mA

=10V

DD

30V

=10Ω

=10V

2.5

(V)

GS (th)

2.0

1.5

1.0

0.5

GATE THRESHOLD VOLTAGE : V

0.0

CHANNEL TEMPERATURE : Tch

Fig.3 Gate Threshold Voltage

vs. Channel Temperature

(°C)

10V

150−50 −25 0

VDS=
ID=1mA

Pulsed

50 75 100 12525

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