ROHM RHP030N03 Technical data
RHP030N03
Transistors
4V Drive Nch MOSFET
RHP030N03
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) 4V drive.
zApplications
Switching
zPackaging specifications zInner circuit
Type
RHP030N03
Package
Code
Basic ordering unit (pieces)
Taping
T100
1000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain current
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a 40×40×0.7mm ceramic board
Symbol
DSS
GSS
D
DP
DR
DRP
P
D
∗1
∗1
Limits Unit
30
±20
3
10
3
10
500
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a 40×40×0.7mm ceramic board
Symbol Limits Unit
Rth(ch-a)
250
62.5
MPT3
(1)Gate
(2)Drain
(3)Source
4.5
1.6
(1)
(3)(2)
0.5
1.51.5
3.0
Abbreviated symbol : KZ
(2)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
1.5
0.5
2.5
4.0
0.4
1.0
0.40.4
(3)
∗2
(1)
∗1
(1)
(2)
(3)
Source
Gate
Drain
VV
VV
AI
AI
AI
AI
mW
∗2
W2
°CTch
°CTstg
∗
°C/W
°C/W
Rev.A 1/3
Transistors
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
I
V
(BR) DSS
I
V
GS (th)
R
DS (on)
C
C
C
t
d (on)
t
d (off)
Q
Q
GSS
DSS
Y
t
t
Q
fs
iss
oss
rss
r
f
g
gs
gd
Min.−Typ. Max.
Unit
− ±10 µAVGS=±20V, VDS=0V
30 −−VID= 1mA, VGS=0V
−−1 µAV
1.0 − 2.5 V V
− 90 120 I
∗
− 160 210 mΩmΩI
∗
2.0 −−SV
− 160 − pF V
− 9027− pF V
−
∗
−
∗
−
∗
−
∗
−
∗
−
∗
−
∗
−−nC I
− pF f=1MHz
7
− ns
11
− ns
15
− ns
4.5
− ns
6.5
− nC
1.0
− nC V
1.5
= 30V, VGS=0V
DS
= 10V, ID= 1mA
DS
= 3A, VGS= 10V
D
= 3A, VGS= 4V
D
= 10V, ID= 3A
DS
= 10V
DS
=0V
GS
V
DD
15
ID= 1.5A
V
GS
= 10V
R
L
=10Ω
R
G
=10Ω
15V
V
DD
= 10V
GS
= 3A
D
RHP030N03
Conditions
V
Rev.A 2/3
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