ROHM RF4E070BN Schematic [ru]

Datasheet

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© 2013 ROHM Co., Ltd. All rights reserved.

RF4E070BN

Nch 30V 7A Power MOSFET

Junction temperature

T

j

150

°C

Range of storage temperature

T

stg

-55 to +150

°C

Power dissipation

Gate - Source voltage

V

GSS

20

V

P

D

*3

2.0

W

Continuous drain current

I

D

*1

7

A

Pulsed drain current

I

D,pulse

*2

28

A

Drain - Source voltage

V

DSS

30

V

Taping code

TR

Marking

HH

lAbsolute maximum ratings(Ta = 25°C) ,unless otherwise specified

Parameter

Symbol

Value

Unit

lPackaging specifications

Type

Packaging

Taping

lApplication

Reel size (mm)

180

DC/DC converters

Tape width (mm)

10

Load switch

Basic ordering unit (pcs)

3,000

lFeatures

lInner circuit

1) Low on - resistance.

2) High Power Small Mold Package (HUML2020L8).

3) Pb-free lead plating ; RoHS compliant

4) Halogen Free

5) 100% Rg and UIS Tested

lOutline

V

DSS

30V

HUML2020L8

I

D

7A

P

D

2.0W

R

DS(on)

at 4.5V (Max.)

40.0mW

R

DS(on)

at 10V (Max.)

28.6mW

*1 BODY DIODE

(1) Drain

(2) Drain
(3) Gate

(4) Source

(5) Drain

(6) Drain
(7) Drain

(8) Source

(2)

(1)

(4)

(3)

(5)

(6)

(7)

(8)

(2)

(3)

(6)

(1)

(5)

(4)

1/10

2013.04 - Rev.A

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Data Sheet

RF4E070BN

*1 Limited only by maximum temperature allowed.

*2 Pw  10ms, Duty cycle  1%

*3 Mounted on a FR4 (40×40×0.8mm)

*4 Pulsed

-

S

Transconductance

gfs

*4

VDS=5V, ID=7A

4.0--

3.2

-

mW

VGS=4.5V, ID=7A

28.6

-

30.8

40.0

V

Gate threshold voltage

V

GS (th)

V

GS

= VDS, ID = 250mA

1.0-2.0

mA

Gate - Source leakage current

I

GSS

V

GS

= 20V, V

DS

= 0V

-

-

100

nA

Zero gate voltage drain current

I

DSS

V

DS

= 30V, V

GS

= 0V

--1

Min.

Typ.

Max.

V

Drain - Source breakdown
voltage

V

(BR)DSS

V

GS

= 0V, ID = 1mA

30---mV/°C

lThermal resistance

Parameter

Symbol

Values

Unit

Min.

Typ.

Max.

lElectrical characteristics(Ta = 25°C) ,unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

Breakdown voltage
temperature coefficient

ΔV

(BR)DSS

ΔT

j

ID=1mA
referenced to 25°C

-18-

mV/°C

Gate input resistannce

R

G

W

Gate threshold voltage
temperature coefficient

ΔV

(GS)th

ΔT

j

ID=1mA
referenced to 25°C

-

-2.1

Static drain - source
on - state resistance

R

DS(on)

*4

VGS=10V, ID=7A

-

22.0

f = 1MHz, open drain

Thermal resistance, junction - ambient

R

thJA

*3

--62.5

°C/W

R

thJC

---

°C/W

2/10

2013.04 - Rev.A

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Data Sheet

RF4E070BN

V

GS

= 0V, Is =1.67A

-

1.67

A

lGate Charge characteristics(T

a

= 25C)

Parameter

Symbol

Conditions

Values

V

lBody diode electrical characteristics (Source-Drain)(T

a

= 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.-1.2

Ta = 25°C
Forward voltage

V

SD

*4

-

Inverse diode continuous,
forward current

IS

*1

-

6

-

ns

Rise time

t

r

*4

ID = 3.5A

-8-

Turn - off delay time

t

d(off)

*4

RL = 4.29W

-23-

Fall time

t

f

*4

RG = 10W

-5-

C

iss

V

GS

= 0V

Output capacitance

C

oss

V

DS

= 15V

Turn - on delay time

t

d(on)

*4

V

DD

⋍ 15V, V

GS

= 10V

-

1.4

lElectrical characteristics(T

a

= 25°C)

Parameter

Symbol

Conditions

Values

-

50

Unit

Min.

Typ.

Max.pF--410--40-

Reverse transfer capacitance

C

rss

f = 1MHz

Input capacitance

-

Unit

Min.

Typ.

Max.

Total gate charge

Q

g

*4

V

DD

⋍ 15V, ID=7A

VGS = 10V

-

8.9

-

nC

V

DD

⋍ 15V, ID=7A

VGS = 4.5V

-

4.6

-

Gate - Source charge

Q

gs

*4

-

1.9

-

Gate - Drain charge

Q

gd

*4

-

3/10

2013.04 - Rev.A

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Data Sheet

RF4E070BN

lElectrical characteristic curves

1

10

100

1000

0.0001 0.01 1 100

Ta=25ºC
Single Pulse

0.01

0.1

1

10

100

0.1 1 10 100

Ta=25ºC
Single Pulse
Mounted on a cupper board.
(40mm × 40mm × 0.8mm)

Operation in this area

is limited by RDS(on)

(VGS = 10V)

PW = 100ms

PW = 1ms

PW = 10ms

DC Operation

0

20

40

60

80

100

120

0 50 100 150 200

0.001

0.01

0.1

1

10

0.0001 0.01 1 100

top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
bottom Single

Ta=25ºC

Rth(ch-a)=62.5ºC/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on a cupper board.
(40mm × 40mm × 0.8mm)

Fig.1 Power Dissipation Derating Curve

Fig.2 Maximum Safe Operating Area

Power Dissipation : P

D

/P

D

max. [%]

Drain Current : I

D

[A]

Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width

Fig.4 Single Pulse Maximum
Power dissipation

Normalized Transient Thermal Resistance : r

(t)

Pulse Width : PW [s] Pulse Width : PW [s]

Peak Transient Power : P(W)

Junction Temperature : Tj [°C]

Drain - Source Voltage : VDS [V]

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2013.04 - Rev.A