Transistors
Switching (30V, 3.5A)
RDS035L03
z
Features
1) Low Qg.
2) Low on-resistance.
3) Exellent resistance to damage from static electricity.
zzzz
Application
Switching
z
zStructure
zz
Silicon N-channel
MOS FET
zzzz
Equivalent circuit
(8) (7) (6) (5)
(5)(6)(7)(8)
z
zExternal dimensions (Units : mm)
zz
Max.1.75
(4)
(1)
+
3.9
0.15
−
+
6.0
0.3
−
+
0.1
0.5
−
+
1.5
−
0.1
+
−
0.2
Each lead has same dimensions
0.15
0.1
ROHM : SOP8
(5)
0.2
+
−
5.0
(8)
RDS035L03
0.1
+
−
0.4
0.1
1.27
(1) (2) (3) (4)
(1) Tr1
Source
(2) Tr1
Gate
(3) Tr2
Source
(4) Tr2
∗ ∗
(1) (2) (3)
Gate Protection Diode.
∗
A protection diode is included between the gate
∗
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
z
zAbsolute maximum ratings (Ta=25°C)
zz
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Reverse Drain
Current
Source Current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Continuous
Pulsed
Total Power Dissipation(Tc=25˚C)
Channel Temperature
Storage Temperature
Pw≤10ms, Duty cycle≤1%
∗
(4)
(5) Tr2
(6) Tr2
(7) Tr1
(8) Tr1
Gate
Drain
Drain
Drain
Drain
Symbol Limits Unit
VDSS
VGSS
DP
I
IDR
IDRP
I
Isp
PD
Tch
Tstg ˚C −55∼+150
30 V
±20
D
3.5I
∗
3.5
∗
s
∗
14
1.3
5.2
2
150
V
A
A14
A
A
A
A
W
˚C
Transistors
z
zThermal resistance (Ta=25°C)
zz
RDS035L03
Parameter
Channel to Ambient
zzzz
Electrical characteristics
Parameter
Gate-Source Leakage
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Pulsed
∗
Symbol Limits Unit
Rth(ch-A) 62.5 ˚C / W
(T a=25°C)
Symbol
(BR) DSS
V
V
R
l Yfs l
t
t
I
GSS
I
DSS
GS (th)
DS (on)
C
C
oss
C
rss
d (on)
∗
t
r
d (off)
∗
t
f
Q
g
Q
gs
gd
Q
Min.
∗
iss
∗
∗
∗
∗
∗
Typ.
−
−
30
−
−
−
1.0
2.5
−
−
62
132
−
−
−
180
−
95
−
38
6
−
12
−
20
−
6
−
− 6.5 −
1.2
−
1.8
−
Unit
Max.
±10
−
10
2.5
80
µA
V
µA
V
mΩ
V
I
V
V
I
I
Test Conditions
GS
=±20V, VDS=0V
D
=1mA, VGS=0V
DS
=30V, VGS=0V
DS
=10V, ID=1mA
D
=3.5A, VGS=10V
D
=3.5A, VGS=4.5V− 105 134
172 ID=3.5A, VGS=4V
S
D
=3.5A, VDS=10V
pF
pF
pF
ns
ns
ns
ns
nC V
nC
nC
I
V
DS
=10V
VGS=0V
f=1MHz
I
D
=2A, V
VGS=10V
RL=7.5Ω
R
GS
=10Ω
DD
=15V
V
GS
=10V
I
D
=3.5A
DD
15V
−
−
−
−
−
−
−
−
−
−
z
zBody diode characteristics (Source-Drain Characteristics) (T a=25°C)
zz
Parameter
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Pulsed
∗
Symbol
SD
V
∗
t
rr
∗
Q
rr
Min.
Typ.
∗
−
−
−
26
−
24
Max.
1.5
−
−
Unit
V
ns
nC
Test Conditions
I
s
=3.5A, VGS=0V
I
DR
=3.5A, VGS=0V
di/dt=50A/µs
Transistors
z
zElectrical characteristic curves
zz
10
(A)
DR
Ta=125˚C
75˚C
25˚C
1
−25˚C
0.1
REVERSE DREIN CURRENT : I
0.01
0.0 0.5 1.0 1.5
SOURCE - DRAIN VOLTAGE : V
Fig.1 Reverse Drein Current
vs. Source - Drain Voltage
VDS=
Pulsed
GS
0V
(V)
10
VDS=
10V
(S)
I
Pulsed
fS
1
0.1
0.01
FORWARD TRANSFER ADMITTANCE : I Y
0.10.01
DRAIN CURRENT : I
Fig.2 Forward Transfer Admittance
vs. Drain Current
Ta=−25˚C
1
D
(A)
25˚C
75˚C
125˚C
10
1
(Ω)
DS (on)
0.1
0.01
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.001
Fig.3 Static Drain-Source
On-State Resistance
vs. Drain Current ( )
RDS035L03
Ta=125˚C
75˚C
25˚C
−25˚C
1
DRAIN CURRENT : I
D
VGS=
Pulsed
(A)
4.5V
100.1
1
(Ω)
DS (on)
0.1
Ta=125˚C
75˚C
0.01
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.001
25˚C
−25˚C
1
DRAIN CURRENT : I
Fig.4 Static Drain-Source
On-State Resistance
vs. Drain Current ( )
4
(V)
GS (th)
3
2
1
GATE THRESHOLD VOLTAGE : V
0
−25 0 75 100 125
CHANNEL TEMPERATURE : T
Fig.7 Gate Threshold Voltage
vs. Channel Temperature
VGS=
Pulsed
D
(A)
VDS=
ID=
Pulsed
ch
10V
1mA
(˚C)
10V
100100.1
150−50 25 50
0.1
VGS=10V
Pulsed
0.09
(Ω)
0.08
DS (on)
0.07
0.06
0.05
0.04
0.03
0.02
0.01
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
−50
0
25
−25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (˚C)
Fig.5 Static Drain-Source
On-State Resistance vs.
Channel Temperature
1000
(pF)
100
CAPACITANCE : C
10
0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V
Fig.8 Typical Capacitance
vs. Drain-Source Voltage
Ta=25˚C
f=1MHz
V
GS
=0V
C
C
C
DS
(V)
0.6
0.5
(Ω)
DS (on)
0.4
0.3
0.2
0.1
ON-STATE RESISTANCE : R
STATIC DRAIN-SOURCE
0
01051520
ID =3.5A
GATE-SOURCE VOLTAGE : V
Ta=25˚C
Pulsed
GS
(V)
Fig.6 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
40
(V)
DS
30
iss
oss
rss
24V
V
20
10
DRAIN-SOURCE VOLTAGE : V
DS
15V
10V
0
01
TOTAL GATE CHARGE : Qg (
24V
15V
10V
32456
V
Ta=25˚C
D
=3.5A
I
Pulsed
nC)
14
(V)
12
GS
10
GS
8
6
4
2
GATE-SOURCE VOLTAGE : V
0
7
Fig.9 Dynamic Input Characteristics
Transistors
RDS035L03
10000
1000
(ns)
SWITCHING TIME : t
t
f
t
d (off)
100
t
10
1
0.01 0.1 101
r
t
d (on)
DRAIN CURRENT : I
Fig.10 Switching Characteristics
Ta=25˚C
V
V
R
Pulsed
D
(A)
DD
GS
G
15V
=10V
=10Ω
10
(t)
: r
D=1
1
D=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
D=0.01
0.01
D=Single
NORMALIZED TRANSIENT
THERMAL RESISTANCE
0.001
10µ 100µ 1m 10m 100m 1 10 100
PULSE WIDTH : PW
Tc=25˚C
θ
θ
(s)
th (ch-c)
th (ch-c)
PW
(t)=r (t) θ
=6.25˚C / W
Fig.12 Normalized Transient Thermal
Resistance vs. Pulse Width
D (A)
10
10V
8.0V
6.0V
5.0V
Ta=25˚C
Pulsed
4.0V
5
3.5V
DRAIN CURRENT : I
0
0
DRAIN-SOURCE VOLTAGE : V
3.0V
VGS=2.5V
DS (V)
Fig.11 Typical Output Characteristics
th (ch-c)
PW
D=
T
T
54321
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