ROHM RDS035L03 Schematics
Transistors
Switching (30V, 3.5A)
RDS035L03
z
Features
1) Low Qg.
2) Low on-resistance.
3) Exellent resistance to damage from static electricity.
zzzz
Application
Switching
z
zStructure
zz
Silicon N-channel
MOS FET
zzzz
Equivalent circuit
(8) (7) (6) (5)
(5)(6)(7)(8)
z
zExternal dimensions (Units : mm)
zz
Max.1.75
(4)
(1)
+
3.9
0.15
−
+
6.0
0.3
−
+
0.1
0.5
−
+
1.5
−
0.1
+
−
0.2
Each lead has same dimensions
0.15
0.1
ROHM : SOP8
(5)
0.2
+
−
5.0
(8)
RDS035L03
0.1
+
−
0.4
0.1
1.27
(1) (2) (3) (4)
(1) Tr1
Source
(2) Tr1
Gate
(3) Tr2
Source
(4) Tr2
∗ ∗
(1) (2) (3)
Gate Protection Diode.
∗
A protection diode is included between the gate
∗
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
z
zAbsolute maximum ratings (Ta=25°C)
zz
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Reverse Drain
Current
Source Current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Continuous
Pulsed
Total Power Dissipation(Tc=25˚C)
Channel Temperature
Storage Temperature
Pw≤10ms, Duty cycle≤1%
∗
(4)
(5) Tr2
(6) Tr2
(7) Tr1
(8) Tr1
Gate
Drain
Drain
Drain
Drain
Symbol Limits Unit
VDSS
VGSS
DP
I
IDR
IDRP
I
Isp
PD
Tch
Tstg ˚C −55∼+150
30 V
±20
D
3.5I
∗
3.5
∗
s
∗
14
1.3
5.2
2
150
V
A
A14
A
A
A
A
W
˚C
Transistors
z
zThermal resistance (Ta=25°C)
zz
RDS035L03
Parameter
Channel to Ambient
zzzz
Electrical characteristics
Parameter
Gate-Source Leakage
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Pulsed
∗
Symbol Limits Unit
Rth(ch-A) 62.5 ˚C / W
(T a=25°C)
Symbol
(BR) DSS
V
V
R
l Yfs l
t
t
I
GSS
I
DSS
GS (th)
DS (on)
C
C
oss
C
rss
d (on)
∗
t
r
d (off)
∗
t
f
Q
g
Q
gs
gd
Q
Min.
∗
iss
∗
∗
∗
∗
∗
Typ.
−
−
30
−
−
−
1.0
2.5
−
−
62
132
−
−
−
180
−
95
−
38
6
−
12
−
20
−
6
−
− 6.5 −
1.2
−
1.8
−
Unit
Max.
±10
−
10
2.5
80
µA
V
µA
V
mΩ
V
I
V
V
I
I
Test Conditions
GS
=±20V, VDS=0V
D
=1mA, VGS=0V
DS
=30V, VGS=0V
DS
=10V, ID=1mA
D
=3.5A, VGS=10V
D
=3.5A, VGS=4.5V− 105 134
172 ID=3.5A, VGS=4V
S
D
=3.5A, VDS=10V
pF
pF
pF
ns
ns
ns
ns
nC V
nC
nC
I
V
DS
=10V
VGS=0V
f=1MHz
I
D
=2A, V
VGS=10V
RL=7.5Ω
R
GS
=10Ω
DD
=15V
V
GS
=10V
I
D
=3.5A
DD
15V
−
−
−
−
−
−
−
−
−
−
z
zBody diode characteristics (Source-Drain Characteristics) (T a=25°C)
zz
Parameter
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Pulsed
∗
Symbol
SD
V
∗
t
rr
∗
Q
rr
Min.
Typ.
∗
−
−
−
26
−
24
Max.
1.5
−
−
Unit
V
ns
nC
Test Conditions
I
s
=3.5A, VGS=0V
I
DR
=3.5A, VGS=0V
di/dt=50A/µs
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