ROHM RCX120N20 Technical data

Data Sheet

10V Drive Nch MOSFET

RCX120N20

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

TO -220F M

10.0

φ

3.2

4.5

2.8

Features

15.0

1) Low on-resistance.

2) Low input capacitance.

14.0

3) High ESD.

 Application

Switching

 Packaging specifications  Inner circuit

Package Bulk

Type

Code ­Basic ordering unit (pieces) 500

RCX120N20 

(1) Gate

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Avalanche current

Avalanche energy

Power dissipation P

E

DSS

GSS

DP

SP

I

AS

D

S

AS

200 V

30 V

*3

*1

*3

*1

*2

*2

*4

D

12 A

48 A

12 A

48 A

6.0 A

11.6 mJ

40 W

(2) Drain
(3) Source

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 L 500H, V

*3 Limited only by maximum channel temperature allowed.

=25°C

*4 T

C

=50V, RG=25, Tch=25°C

DD

12.0

8.02.5

1.3

(2)(3)(1)

(1) (3)(2)

1 BODY DIODE

1.2

0.8

2.54 2.62.54

0.75

∗1

 Thermal resistance

Parameter

Channel to Case Rth (ch-c) 3.125 C / W

* TC=25°C

* Limited only by maximum channel temperature allowed.

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Symbol Limits Unit

*

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2011.11 - Rev.A

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Data Sheet

RCX120N20

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=30V, VDS=0V

200 - - V ID=1mA, VGS=0V

--10AVDS=200V, VGS=0V

3.25 - 5.25 V VDS=10V, ID=1mA

- 250 325

*

*

l 2.75 5.5 - S VDS=10V, ID=6.0A

- 740 - pF VDS=25V

- 57 - pF VGS=0V

- 26 - pF f=1MHz

- 20 - ns VDD 100V, ID=6.0A

*

- 33 - ns VGS=10V

*

- 27 - ns RL=16.67

*

- 11 - ns RG=10

*

- 15 - nC VDD 100V, ID=12A

*

-6-nCV

*

-6-nC

*

ID=6.0A, VGS=10V

m

=10V

GS

Body diode characteristics (Source-Drain)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.5 V Is=12A, VGS=0V

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2011.11 - Rev.A