ROHM EMD9, UMD9N, IMD9A Technical data

d. d.
EMD9 / UMD9N / IMD9A
Features Dimensions (Unit : mm)
1) DTA114Y and DTC114Y transistors are built-in a EMT or UMT or SMT package.
Inner circuit
EMD9 / UMD9N
(1)(3)
(2)
R
1
2
R
DTr2
R
2
R
1
(4) (5) (6)
DTr1
R1=10k R2=47k
Ω Ω
IMD9A
DTr2
(3) (2) (1)
(6)(4)
(5)
R
1
R
2
DTr1
R
2
R
1
R1=10k
Ω
R2=47k
Ω
Package, marking, and packaging specifications
Type EMD9
Package
Marking
Code
Basic
ordering unit
(pieces)
EMT6
T2R
8000
UMD9N
D9
UMT6
3000
IMD9A
D9
TR
SMT6
D9 T108 3000
Absolute maximum ratings (Ta=25C)
Parameter Supply voltage Input voltage Output current Collector current
Power dissipation Junction temperature
Storage temperature
1
120mW per element must not be exceeded. PNP type negative symbols have been omitte
2
200mW per element must not be exceeded. PNP type negative symbols have been omitte
EMD9, UMD9N IMD9A
Symbol
V
V
I
I
C (Max.)
Pd
Tj
Tstg
Limits
CC
IN
O
50
6 to +40 70
100
150(TOTAL) 300(TOTAL)
150
55 to +150
Unit
V
V mA mA mW mW
°C °C
1
2
Electrical characteristics (Ta=25C)
Parameter Symbol Min. Typ. Max. Unit Conditions Input voltage Output voltage
Input current Output current DC current gain Transition frequency Input resistance
Resistance ratio
PNP type negative symbols have been omitted.
Characteristics of built-in transistor.
V V V
I
R2/R
O(off)
I(off) I(on) O(on)
I
I
G
I
f
T
R
1
1
250
4.7
0.3
0.1
0.3
0.88
0.5
5.7
1.4
68
710−13 kW
3.7
mA mA
MHz
V V
V
CC
=5V , IO=100μA
O
=0.3V , IO=1mA
V I
O
=5mA , II=0.25mA
V
I
=5V
V
CC
=50V , VI=0V
I
O
=5mA , VO=5V
CE
=10V , IE= −5mA , f=100MHz
V
EMD9
ROHM : EMT6
UMD9N
ROHM : UMT6 EIAJ : SC-88
IMD9A
ROHM : SMT6 EIAJ : SC-74
(3)
(4)
0.5
(2)(5)
0.22
0.13
0.5
(1)
(6)
1.2
1.6
Each lead has same dimensions
Abbreviated symbol : D9
)
)
3
4
(
(
)
)
2
5
(
(
0.2
)
)
6
1
(
(
1.25
2.1
0.15
0.1Min.
0to0.1
Each lead has same dimensions
Abbreviated symbol : D9
)
)
6
1
(
(
0.3
0.15
0.3to0.6
)
5
( )
4
(
0.95
)
2
(
0.95
)
3
(
1.6
2.8
0.8
0to0.1
Each lead has same dimensions
Abbreviated symbol : D9
1.0
0.65
0.65
0.7
1.9
1.6
0.5
1.3
2.0
0.9
2.9
1.1
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2010 ROHM Co., Ltd. All rights reserved.
2010.01 - Rev.D
m
t
.0
1k
m
m
current
Electrical characteristics curves DTr1 (DTC114Y)
100
50
20
(V)
I(on)
10
5
Ta=−40°C
25°C
2
1
500m
INPUT VOLTAGE : V
200m
100m
100μ
100°C
2m 20m500μ−5m −50m
1m
200μ
OUTPUT CURRENT : I
Fig.1 Input voltage vs. output curren
(ON characteristics)
10m
VO=−0.3V
O
(A)
1
500m
(V)
200m
O(on)
100m
50m
20m
10m
5m
OUTPUT VOLTAGE : V
2m
1m
100μ
200μ
Ta=100°C
25°C
40°C
2m 20m500μ−5m −50m
1m
OUTPUT CURRENT : I
Fig.4 Output voltage vs. output
10m
O
lO/lI=20
(A)
100
100
10m
5m
2m
(A)
1m
500μ
200μ
100μ
50μ
20μ
10μ
OUTPUT CURRENT : Io
5μ
2μ
1μ 0 3
0.5 1.0 1.5 2.0 2.5
INPUT VOLTAGE : V
Fig.2 Output current vs. input voltage
(OFF characteristics)
Ta=100°C
25°C
40°C
Data Sheet EMD9 / UMD9N / IMD9A
V
CC
=−
5V
I(off)
(V)
500
I
200 100
50
20 10
5
DC CURRENT GAIN : G
2 1
100μ−1m 10m 100
Ta=100°C
25°C
40°C
200μ−2m −20m500μ−5m −50m
OUTPUT CURRENT : I
Fig.3 DC current gain vs. output
current
O
(A)
VO=−5V
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2010 ROHM Co., Ltd. All rights reserved.
2010.01 - Rev.D
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