Datasheet EM6K7 Datasheet (ROHM)

g

C

T

1.2V Drive Nch+Nch MOSFET

EM6K7

zStructure zDimensions (Unit : mm)
Silicon N-channel
MOSFET

zApplications

Switching

zFeatures

1) The MOSFET elements are independent,
eliminating mutual interference.

2) Mounting cost and area can be cut in half.

3) Low voltage drive (1.2V) makes this device ideal for
portable equipment.

zPackaging specifications

Type

EM6K7

Package
Code
Basic ordering unit

(pieces)

Tapin

T2R

8000

zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2>

Parameter
Drain−source voltage
Gate−source voltage

Drain current

Continuous
Pulsed

Total power dissipation

Channel temperature
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land.

Symbol

DSS

V
V

GSS

I

D

I

DP

∗2

P

D

Tch

Tstg

∗1

Limits Unit

20

±8
±200
±400

150

mW / TOTAL

mW / ELEMENT120

150

−55 to +150

zThermal resistance

Parameter

hannel to ambient

∗ Each terminal mounted on a recommended land

Symbol Limits Unit

Rth(ch-a)

833

∗

1042

°C/W / TOTAL

°C/W / ELEMEN

EMT6

zInner circuit

∗1 Esd Protection diode
∗2 Body Diode

V

V
mA
mA

°C
°C

∗1

(1)

Abbreviated symbol : K07

(2) (3)

Each lead has same dimensions

(4)(5)(6)

∗1

∗2∗2

(1)Tr1 Source
(2)Tr1 Gate
(3)Tr2 Drain
(4)Tr2 Source
(5)Tr2 Gate
(6)Tr1 Drain

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2009.07 - Rev.A

zElectrical characteristics (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2>

Typ. Max. Unit Conditions

Min.

GSS

−

20

−

0.3

−

−

∗

−

−

∗

200

C

iss

−

oss

rss

d(on)

t

d(off)

t

−

−

∗

−

∗

r

−

∗

−

∗

f

−

Min. Typ. Max.

∗

−−1.2 V IS= 100mA, VGS=0VForward voltage

−

±10

−

−

1.0

−

0.8

1.2

1.0 1.4

1.2

2.4

1.6

4.8

−

25
10
10

5
10
15
10

t

Symbol

I

V(BR)DSS

IDSS

VGS(th)

RDS(on)

|Yfs|

Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain curren
Gate threshold voltage

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time

C
C
t

Rise time
Turn-off delay time

t

Fall time

∗ Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

V

∗ Pulsed

SD

−

1

−

−

−

−

−

−

−

−

Unit

GS=±8V, VDS=0V

µAV

V

ID=1mA, VGS=0V

µA

VDS=20V, VGS=0V

V

V

DS=10V, ID=1mA

Ω

D=200mA, VGS=2.5V

I

Ω

D=200mA, VGS=1.8V

I

Ω

D=40mA, VGS=1.5V

I
I

D=20mA, VGS=1.2V

Ω

mS

DS=10V, ID=200mA

V

pF

V

DS=10V

pF

GS=0V

V

pF

f=1MHz

ns

DD 10V, ID=150mA

V

ns

V

GS=4.0V

ns

L 67Ω

R

ns

R

G=10Ω

Conditions

Data Sheet EM6K7

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2009 ROHM Co., Ltd. All rights reserved.

2009.07 - Rev.A

.5

V

V

V

zElectrical characteristics curves

0.5

0.4

[A]

D

0.3

0.2

DRAIN CURRENT : I

0.1

0

00.20.40.60.81

Fi g.1 Typical Output Charac terist ics(Ⅰ)

VGS= 4.5
VGS= 2.5
VGS= 1.8

DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V]

VGS= 1.5V

VGS= 1.3V

Ta= 25°C
Pulsed

VGS= 1. 2V

0.5

VGS= 2.5V

= 1.8V

V

GS

0.4

[A]

D

0.3

0.2

DRAIN CURRENT : I

0.1

0

024 6810

Fi g.2 T ypic al Output C haracter ist ics(Ⅱ)

VGS= 1. 5V

VGS= 1.3V

VGS= 1.2V

Ta= 25°C
Pulsed

1

V

DS

=10V

Pulsed

0.1

(A)

D

0.01

0.001

0.0001

DRAIN CURRENT : I

0.00001

0.0 0.5 1.0 1

GATE-SOURCE VOLTAGE : VGS (V)

Ta=125°C

−25°C

Fig.3 Typical transfer characteristics

75°C
25°C

Data Sheet EM6K7

10000

Ta= 25°C
Pulsed

]

Ω

(on) [m

DS

1000

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.001 0.01 0.1 1

DRAIN-CURRENT : ID[A]

Fi g.4 Stat ic Dr ain- Source O n-State

Resi stance vs. D rai n Curr ent(Ⅰ)

10000

VGS= 1. 8V
Pulsed

]

Ω

(on) [m

DS

1000

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.001 0 .01 0.1 1

DRAIN-CURRENT : ID[A]

Fi g.7 Stat ic Dr ain- Source O n-State

Resi stance vs. D rai n Curr ent(Ⅲ)

VGS= 1. 2V

= 1. 5V

V

GS

V

= 1. 8V

GS

V

= 2. 5V

GS

V

= 4. 0V

GS

Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C

10000

VGS= 4. 0V
Pulsed

]

Ω

(on) [m

DS

1000

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.001 0. 01 0.1 1

DRAIN-CURRENT : ID[A]

Fi g.5 Static Drain- Source On- State

Resi stance vs. D rai n Curr ent(Ⅱ)

10000

VGS= 1. 5V
Pulsed

]

Ω

(on) [m

DS

1000

Ta= 125°C

Ta= 75°C

RESIST ANCE : R

STATI C DRAIN -SOUR CE ON- STATE

100

0.001 0. 01 0. 1 1

DRAIN-CURRENT : ID[A]

Fi g.8 St atic D rai n-Sourc e On-Stat e

Resistance vs. Drain Curr ent(Ⅳ)

Ta= 25°C

Ta= -25°C

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

10000

VGS= 2.5V
Pulsed

]

Ω

(on) [m

DS

1000

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.001 0. 01 0.1 1

DRAIN-CURRENT : I

Fi g.6 Stat ic D rain- Source O n-State

Resi stance vs. D rai n Curr ent(Ⅱ)

10000

VGS= 1.2V
Pulsed

]

Ω

(on)[m

DS

1000

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.001 0.01 0.1 1

DRAIN-CURRENT : I

Fig .9 Static Dr ain-Source On-State

Resi stance vs. D rai n Curr ent(Ⅴ)

Ta=125°C

Ta=75°C
Ta=25°C

Ta= -25°C

Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C

[A]

D

[A]

D

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2009.07 - Rev.A

.5

1

zMeasurement circuit

1

VDS= 10V
Puls ed

FOR WAR D TRAN SFER

ADM ITTAN CE : |Yfs| [S]

0.1

0.01 0.1 1

DRAIN-CURRENT : ID[A]

Fi g.10 F orward T ransf er A dmit tance
vs. Drai n Curr ent

1000

100

10

SWITHING TIME : t (ns)

1

0.01 0.1
DRAIN CURRENT : ID (A)

Fig.13 Switching characteristics

Ta= -25°C
Ta=25°C
Ta=75°C
Ta= 125°C

Ta

V
V
R
Pulsed

t

d(off)

t

f

t

d(on)

t

r

=25°C

DD
GS

G

=10Ω

=10V
=4V

1

(A)

S

Ta=125°C

0.1

SOURCE CURRENT : I

0.01

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.11 Source current vs.

source-drain voltage

100

10

CAPACITANCE : C [pF]

Ta= 25°C
f=1MH z
V

1

0.01 0.1 1 10 100

Crss

=0V

GS

DRAIN-SOURCE VOLTAGE : V

Fi g.14 T ypical Capaci tance
vs. Drain- Source Voltage

10.50.0

Ciss

Coss

Pulse width

V

GS

Pulsed

75°C
25°C

−25°C

Data Sheet EM6K7

=0V

1

[V]

DS

2.5

2

]

Ω

(ON)[

1.5

DS

1

RESISTAN CE : R

0.5

ID= 0.02A

STAT IC D RAIN- SOURC E ON-ST ATE

0

0246810

Fi g.12 Stati c Dr ain- Source On- State
Resi stance vs. Gate Sourc e Voltage

ID= 0. 2A

GATE- SOURC E VOLTAGE : VGS[V]

Ta=25°C
Pulsed

V

GS

R

G

D.U.T.

I

D

V

DS

R

L

V

DD

Fig.1-1 Switching time measurement circuit

V

VDS

50%

GS

10%

10%

90%

t

r

t

d (on)

t

on

Fig.1-2 Switching waveforms

90%

t

d (off)

50%

10%

90%

t

f

t

off

zNotice

This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit

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2009.07 - Rev.A

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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

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Please be sure to implement in your equipment using the Products safety measures to guard
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