ROHM EM6K7 Technical data

g

C

T

1.2V Drive Nch+Nch MOSFET

EM6K7

zStructure zDimensions (Unit : mm)
Silicon N-channel
MOSFET

zApplications

Switching

zFeatures

1) The MOSFET elements are independent,
eliminating mutual interference.

2) Mounting cost and area can be cut in half.

3) Low voltage drive (1.2V) makes this device ideal for
portable equipment.

zPackaging specifications

Type

EM6K7

Package
Code
Basic ordering unit

(pieces)

Tapin

T2R

8000

zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2>

Parameter
Drain−source voltage
Gate−source voltage

Drain current

Continuous
Pulsed

Total power dissipation

Channel temperature
Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land.

Symbol

DSS

V
V

GSS

I

D

I

DP

∗2

P

D

Tch

Tstg

∗1

Limits Unit

20

±8
±200
±400

150

mW / TOTAL

mW / ELEMENT120

150

−55 to +150

zThermal resistance

Parameter

hannel to ambient

∗ Each terminal mounted on a recommended land

Symbol Limits Unit

Rth(ch-a)

833

∗

1042

°C/W / TOTAL

°C/W / ELEMEN

EMT6

zInner circuit

∗1 Esd Protection diode
∗2 Body Diode

V

V
mA
mA

°C
°C

∗1

(1)

Abbreviated symbol : K07

(2) (3)

Each lead has same dimensions

(4)(5)(6)

∗1

∗2∗2

(1)Tr1 Source
(2)Tr1 Gate
(3)Tr2 Drain
(4)Tr2 Source
(5)Tr2 Gate
(6)Tr1 Drain

www.rohm.com

1/4

c

○

2009 ROHM Co., Ltd. All rights reserved.

2009.07 - Rev.A

zElectrical characteristics (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2>

Typ. Max. Unit Conditions

Min.

GSS

−

20

−

0.3

−

−

∗

−

−

∗

200

C

iss

−

oss

rss

d(on)

t

d(off)

t

−

−

∗

−

∗

r

−

∗

−

∗

f

−

Min. Typ. Max.

∗

−−1.2 V IS= 100mA, VGS=0VForward voltage

−

±10

−

−

1.0

−

0.8

1.2

1.0 1.4

1.2

2.4

1.6

4.8

−

25
10
10

5
10
15
10

t

Symbol

I

V(BR)DSS

IDSS

VGS(th)

RDS(on)

|Yfs|

Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain curren
Gate threshold voltage

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time

C
C
t

Rise time
Turn-off delay time

t

Fall time

∗ Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

V

∗ Pulsed

SD

−

1

−

−

−

−

−

−

−

−

Unit

GS=±8V, VDS=0V

µAV

V

ID=1mA, VGS=0V

µA

VDS=20V, VGS=0V

V

V

DS=10V, ID=1mA

Ω

D=200mA, VGS=2.5V

I

Ω

D=200mA, VGS=1.8V

I

Ω

D=40mA, VGS=1.5V

I
I

D=20mA, VGS=1.2V

Ω

mS

DS=10V, ID=200mA

V

pF

V

DS=10V

pF

GS=0V

V

pF

f=1MHz

ns

DD 10V, ID=150mA

V

ns

V

GS=4.0V

ns

L 67Ω

R

ns

R

G=10Ω

Conditions

Data Sheet EM6K7

www.rohm.com

2/4

c

○

2009 ROHM Co., Ltd. All rights reserved.

2009.07 - Rev.A