ROHM DTA123JEB Schematic [ru]

-100mA / -50V Digital transistors

(with built-in resistors)

DTA123JEB

zApplications zDimensions (Unit : mm)
Inverter, Interface, Driver

zFeatures

1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for
operation, making the device design easy.

zStructure zEquivalent circuit

PNP silicon epitaxial planar transistor type
(Resistor built-in)

zPackaging specifications

EMT3F

TL

3000

Part No.
DTA123JEB

Package
Packaging type Taping
Code
Basic ordering unit (pieces)

zAbsolute maximum ratings (Ta=25°C)

Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Storage temperature

∗1 Characteristics of built-in transistor
∗2 Each terminal mounted on a recommended land

V

V

Io

P

Tj

Tstg

CC

IN

D

LimitsParameter Symbol

−50

−12 to +5

∗1

∗2

−100 mAIc(max)

−100

150
150

−55 to +150

Unit

V
V

mA

mW

°C
°C

EMT3F

(1) IN
(2) GND
(3) OUT

R

IN

R1=2.2kΩ, R2=47kΩ

1

R

2

IN

0.26
(3)

0.37

1.6

0.86

(1) (2)

0.37

0.5 0.5

Abbreviated symbol : E32

GND(+)

1.6

1.0

OUT

GND(+)

OUT

0.7

0.45

0.13

Each lead has same dimensions

0.45

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2009 ROHM Co., Ltd. All rights reserved.

2009.03 - Rev.B

m

t

.0

e

1k

m

Fig.4 Output voltage vs. output current

m

zElectrical characteristics (Ta=25°C)

Parameter Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

∗ Characteristics of built-in transistor

zElectrical characteristic curves

−100

−50

−20

(V)

I(on)

−10

−5

Ta=−40°C

100°C

−

500µ

100µ

−

200µ

OUTPUT CURRENT : I

25°C

−

1m

−

2m

−

20m

−

5m

−

10m

O

(A)

−2

−1

−500m

INPUT VOLTAGE : V

−200m

−100m

−

Fig.1 Input voltage vs. output curren

(ON characteristics)

500

I

200
100

50

20
10

5

DC CURRENT GAIN : G

2
1

−100µ−1m −10m −100

Ta=100°C

25°C

−40°C

−200µ−2m −20m−500µ−5m −50m

OUTPUT CURRENT : I

O

(A)

Fig.3 DC current gain vs. output

current

V

I(off)

V

I(on)

V

O(on)

I

I

I

O(off)

G

I

f

T

R

1

R2/R

1

VO=−0.3V

−

50m

VO=−5V

Min.

−

−1.1

−

−

−

80

−

1.54
17

−

100

Typ. Max. Unit Conditions

−

−

−100

−

−

−

250

2.2
21

−500

−

−300

−3.6

−500

−

−

2.86
26

V

mV

CC

=−5V, IO=−100µA

O

=−0.3V, IO=−5mA

V

V
I

O/II

mV
mA

nA

−

MHz

kΩ

=−5mA/−0.25mA

V

I

=−5V

CC

=−50V, VI=0V

V

O

=−5V, IO=−10mA

V

CE

=−10V, IE=5mA, f=100MHz∗

V

−

−−

−10m

−5m

−2m

(A)

−1m

−500µ

−200µ

−100µ

−50µ

−20µ

−10µ

OUTPUT CURRENT : Io

−5µ

−2µ

−1µ

0

Ta=100°C

0.5−1.0−1.5−2.0−2.5

−

INPUT VOLTAGE : V

Fig.2 Output current vs. input voltag

(OFF characteristics)

−1

−500m

−200m

(V)

O(on)

−100m

−50m

−20m

−10m

−5m

OUTPUT VOLTAGE : V

−2m

−1m

−100µ

−1m

−200µ

OUTPUT CURRENT : I

VCC=−5V

25°C

−40°C

I(off) (V)

lO/lI=20

Ta=100°C

25°C

−40°C

−2m −20m−500µ−5m −50m

−10m

O

(A)

−

3

−100

Data Sheet DTA123JEB

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○

2009 ROHM Co., Ltd. All rights reserved.

2009.03 - Rev.B