ROHM DTA123JE, DTA123JKA, DTA123JM, DTA123JSA, DTA123JUA Schematic [ru]

DTA123JM / DTA123JE / DTA123JUA

Transistors DTA123JKA / DTA123JSA

-100mA / -50V Digital transistors (with built-in resistors)

DTA123JM / DTA123JE / DTA123JUA /
DTA123JKA / DTA123JSA

zApplica tions
Inverter, Interface, Driver

zFeatures

1) Built-in bias resistors e nable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).

2) The bias resistors consist of thin-film resistors with complete isolatio n to allow pos itive biasi ng of the in put. They also
have the advantage of almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for operation, making the device design easy .

zStructure

PNP epitaxial planar silicon transistor (Resistor built-in type)

zExternal dimensions (Unit : mm)

DTA123JM

ROHM : VMT3

DTA123JUA

ROHM : UMT3
EIAJ : SC-70

DTA123JSA

ROHM : SPT
EIAJ : SC-72

1.2

DTA123JE

0.32

0.2

(3)

1.2

0.8

(2)

(1)

0.22

0.40.4

0.8

Abbreviated symbol : E32 Abbreviated symbol : E32

2.0

0.3

(3)

(1)

(2)

0.65

0.65

1.3

Abbreviated symbol : 132

4.0 2.0

3.0

(15Min.)

2.5

5.0

(1) (2) (3)

Abbreviated symbol : A123JS

0.13

0.2

0.5

0.9

0.7

0.2

2.1

1.25

0.15

Each lead has same dimensions Each lead has same dimensions

3Min.

0.45

0.45

0.5

0.1Min.

(1) IN
(2) GND
(3) OUT

(1) GND
(2) IN
(3) OUT

(1) GND
(2) OUT
(3) IN

ROHM : EMT3

DTA123JKA

ROHM : SMT3
EIAJ : SC-59

1.6

0.3

(3)

(2)

(1)

0.2

0.5

0.5

1.0

2.9

0.4

(3)

(2)

0.95 0.95

1.9

Abbreviated symbol : E32

0.7

0.55

1.6

0.8

0.2

0.15

1.6

2.8

(1)

0.15

(1) GND

0.1Min.

(2) IN
(3) OUT

1.1

0.8

(1) GND
(2) IN

0.3Min.

(3) OUT

Rev.A 1/3

DTA123JM / DTA123JE / DTA123JUA

Transistors DTA123JKA / DTA123JSA

zPackaging specifications zEquiv alent circuit

VMT3

T2L

8000

−

−

−

−

TapingTaping Taping Taping Taping

3000

Part No.
DTA123JM

DTA123JE
DTA123JUA
DTA123JKA
DTA123JSA

Package
Packaging type
Code

Basic ordering
unit (pieces)

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Supply voltage
Input voltage

Output current

Power dissipation
Junction temperature
Storage temperature

V
V

I

C(Max.)

P

Tstg

CC

IN

I

O

D

Tj

DTA123JEDTA123JM

150 200 300

zElectrical characteristics (Ta=25°C)

Parameter Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency

∗ Characteristics of built-in transistor

V
V

V

O(on)

I

O(off)

G

R

R2/R

I(off)

I(on)

I

f

Min.

−

−1.1

−

−

I

−

80

I

1.54

1

17

1

−

T

∗

Rev.A 2/3

UMT3EMT3 SMT3 SPT

TL

T106

3000

−

−

−

−

DTA123JUA DTA123JKA DTA123JSA

−55 to +150

Typ. Max. Unit Conditions

−

−

−0.1

−

−

−

2.2
21

250

T146

3000TP5000

−

−

−

−

−12 to +5

−0.5

−0.3

−3.6

−0.5

2.86
26

−

−

−

−

Limits

−50

−100

−100

150

V

−

V

mA

µA

−

−

kΩ

−−

−

MHz

−

−

−

−

V

CC

=−5V, IO=−100µA

V

O

=−0.3V, IO=−5mA

I

O/II

=−5mA/−0.25mA

V

I

=−5V

V

CC

=−50V, VI=0V

VO=−5V, IO=−10mA

CE

=−10V, IE=5mA, f=100MHz

V

R

IN

1

R

2

IN

R1=2.2kΩ, R2=47kΩ

Unit

V
V

mA

mW

°C
°C

−

OUT

GND(+)

OUT

GND(+)