ROHM DTA123EE, DTA123EKA, DTA123EM, DTA123EUA Schematic [ru]

-100mA / -50V Digital transistors
(with built-in resistors)

DTA123EM / DTA123EE / DTA123EUA / DTA123EKA

zApplications
Inverter, Interface, Driver

zFeatures

1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
(see equivalent circuit)

2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for operation, making the device design easy.

zStructure

PNP epitaxial planar silicon transistor (Resistor built-in type)

zDimensions (Unit : mm)

DTA123EM

ROHM : VMT3

DTA123EUA

ROHM : UMT3
EIAJ : SC-70

1.2

0.32

0.2

(3)

1.2

0.8

(2)

(1)

0.22

Abbreviated symbol : 12

2.0

0.3

(3)

(2)

0.65

0.65

1.3

Abbreviated symbol : 12

0.2

0.40.4

0.8

0.2

2.1

1.25

(1)

Each lead has same dimensions Each lead has same dimensions

0.5

0.15

0.13

0.9

0.7

0.1Min.

(1) IN
(2) GND
(3) OUT

(1) GND
(2) IN
(3) OUT

DTA123EE

ROHM : EMT3

DTA123EKA

ROHM : SMT3
EIAJ : SC-59

1.6

0.3

(3)

0.8

(2)

0.2

(1)

0.2

0.5

0.5

1.0

Abbreviated symbol : 12

2.9

0.4

(3)

1.6

(2)

0.95 0.95

(1)

1.9

Abbreviated symbol : 12

0.7

0.55

1.6

0.15

1.1

0.8

2.8

0.15

zPackaging specifications zEquivalent circuit

TL

−

−

−

UMT3EMT3 SMT3

T106

3000

T146

3000

−

−

−

−

−

−

R

IN

1

R

2

IN

GND(+)

Part No.
DTA123EM

DTA123EE
DTA123EUA
DTA123EKA

Package
Packaging type
Code

Basic ordering
unit (pieces)

VMT3

T2L

8000

−

−

−

TapingTaping Taping Taping

3000

R1=R2=2.2kΩ

0.1Min.

0.3Min.

(1) GND
(2) IN
(3) OUT

(1) GND
(2) IN
(3) OUT

OUT

GND(+)

OUT

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2009 ROHM Co., Ltd. All rights reserved.

2009.03 - Rev.B

100

m

t

.0

10m

e

DC CURRENT GAIN : G

1k

m

1

m

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Supply voltage
Input voltage

Output current

Power dissipation
Junction temperature
Storage temperature

zElectrical characteristics (Ta=25°C)

Parameter Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency

∗ Characteristics of built-in transistor

zElectrical characteristic curves

50

20

(V)

10

I(on)

Ta=−40°C

25°C

5

100°C

2
1

500m

INPUT VOLTAGE : V

200m
100m

−100µ−200µ−500µ−1m −2m −5m −10m −20m −50m −100
OUTPUT CURRENT : I

Fig.1 Input voltage vs. output curren

(ON characteristics)

500m

(V)

200m

O(on)

100m
50m

20m
10m

5m

OUTPUT VOLTAGE : V

2m
1m

−100µ−200µ−500µ−1m −2m −5m −10m −20m −50m −100
OUTPUT CURRENT : I

Fig.4 Output voltage vs. output

current

CC

V

V

IN

I

O

I

C(Max.)

P

D

Tj

Tstg

Ta=100°C

25°C

−40°C

O

O

(A)

V
V

V

I

R2/R

(A)

I(off)

I(on)

O(on)

I

I

O(off)

G

I

R

1

1

f

T

VO=−0.3V

IO/II=20

Limits

DTA123EEDTA123EM

DTA123EUA DTA123EKA

−50

−12 to +10

−100

−100

150 200

150

−55 to +150

Min.

Typ. Max. Unit Conditions

−

−3

−

−

−

20

1.54

0.8

−

−0.5

−

−

−

−0.3

−0.1

−3.8

−

−

−0.5

−

−

2.2

2.86

1

1.2

250

−

5m
2m

(A)

1m

O

500µ
200µ

100µ

50

µ

20

µ

10

µ

OUTPUT CURRENT : I

5

µ

2

µ

1

µ

0 −3

−

0.5

V

CC

V

O

=−0.3V, IO=−20mA

V
I

O/II

V

V

mA

I

=−5V

µA

CC

V

−

V

O

=−5V, IO=−20mA

kΩ

−−

MHz

V

CE

−1.0 −

1.5

INPUT VOLTAGE : V

Fig.2 Output current vs. input voltag

(OFF characteristics)

Unit

V
V

mA

mW

°C
°C

=−5V, IO=−100µA

=−10mA/−0.5mA

=−50V, VI=0V

−

=−10V, IE=5mA, f=100MHz∗

VCC=−5V

Ta=100°C

25°C

−40°C

−2.0 −

2.5

I(off)

(V)

500

200

I

100

50

Ta=100°C

25°C

20
10

5
2

1

−100µ−200µ−500µ−1m −2m −5m −10m −20m −50m −100

−40°C

OUTPUT CURRENT : I

O

(A)

Fig.3 DC current gain vs. output

current

Data Sheet DTA123EM / DTA123EE / DTA123EUA / DTA123EKA

VO=−5V

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2009 ROHM Co., Ltd. All rights reserved.

2009.03 - Rev.B