DTA115TH / DTA115TE / DTA115TUA /
Transistors
DTA115TKA / DTA115TSA
Digital transistors (built-in resistor)
DTA115TH / DTA115TE / DTA115TUA /
DTA115TKA / DTA115TSA
Features
!!!!
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input,
and parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for
operation, making device design easy.
4) Higher mounting densities can be achieved
Circuit schematic
!!!!
B
E : Emitter
C : Collector
B : Base
R
1
C
E
.
External dimensions
!!!!
DTA115TH
ROHM : EMT3H
EIAJ : SC-89
DTA115TE
0.3
0.15
0.1Min.
ROHM : EMT3
EIAJ : SC-75A
DTA115TUA
0.3
0.15
0.1~0.4
ROHM : UMT3
EIAJ : SC-70
0.85
0.27
(3)
0.12
(3)
0.8
1.6
0~0.1
)
3
(
(Units : mm)
1.6
(1)
(2)
1.0
0.5 0.5
0.7
0.1
~
0
0.2
(1)
(2)
0.50.5
0.2
0.7
0.55
)
1
(
0.65
)
2
1.3
(
0.65
1.25
2.1
0.2
0.9
0.7
0~0.1
1.6
(1)Emitter
(2)Base
(3)Collector
1.6
1.0
(1)Emitter
(2)Base
(3)Collector
2.0
Each lead has same dimensions
(1)Emitter
(2)Base
(3)Collector
DTA115TKA
ROHM : SMT3
EIAJ : SC-59
DTA115TSA
ROHM : SPT
EIAJ : SC-72
)
3
(
0.4
1.6
2.8
0.15
0.3~0.6
0.1
~
0
42
3
3Min.
)
0.45
15Min.
(
2.5
5
(1)(2)(3)
)
1
(
1.9
2.9
)
2
(
0.95 0.95
Each lead has same dimensions
1.1
0.8
Taping specifications
0.45
0.5
(1)
Emitter
(2)
Base
(3)
Collector
(1)
Emitter
(2)
Collector
(3)
Base
DTA115TH / DTA115TE / DTA115TUA /
Transistors
Absolute maximum ratings
!!!!
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Package, marking, and packaging specifications
!!!!
Package
Marking
Packaging code
Basic ordering unit (pieces)
Electrical characteristics
!!!!
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Input resistance
Transition frequency
∗Transition frequency of the device.
DTA115TH / DTA115TE
DTA115TUA / DTA115TKA
DTA115TSA
Part No.
Parameter
transfer ratio
(Ta = 25°C)
DTA115TEDTA115TH
(Ta = 25°C)
Symbol
BV
BV
BV
I
I
V
EMT3EMT3H
CBO
CEO
EBO
CBO
EBO
CE(sat)
h
FE
R
1
f
T
Limits
V
CBO
V
CEO
V
EBO
I
C
−50
−50
−5
−100
Unit
V
V
V
mA
150
P
C
200
mW
300
T
j
T
stg
9999
TLT2L
30008000
150
−55 ~ +150
DTA115TUA
UMT3
99
T106
3000
°C
°C
DTA115TKA
SMT3
99
T146
3000
Min. Typ. Max. Unit Conditions
−50
−50
−5
100
70
−
−
−
250
100
−
250
−
−
−
−
−
−
−
−0.5
−
−0.5
−
−0.3
600
130
−
DTA115TKA / DTA115TSA
DTA115TSA
SPT
−
TP
5000
I
C
=−50µA
V
C
=−1mA
I
V
E
=−50µA
I
V
CB
=−50V
V
µA
µA
EB
=−4V
V
C/IB
=−1mA/−0.1mA
I
V
−
C
=−1mA , VCE=−5V
MH
kΩ
I
CE
=−10V , IE=5mA , f=100MH
V
Z
−
Z
∗