ROHM DTA115GKA Schematic [ru]
DTA115GUA / DTA115GKA
Transistors
Digital transistors (built-in resistor)
DTA115GUA / DTA1 15GKA
zFeatures
1) The built-in bias resistors consist of thin-film resistors
with complete isolation to allo w positive bi asing of the
input, and parasitic effects are almost completely
eliminated.
2) Only the on / off conditions need to be set
for operation, making device design easy.
3) Higher mounting densities can be achieved.
zEquivalent circuit
B
R
E : Emitter
C : Collector
B : Base
C
E
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
CBO
V
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
−55 to +150
zPackage, marking, and p ackaging specifications
Type
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTA115GUA
UMT3
K19
T106
3000
DTA115GKA
Rev.A 1/2
zExternal dimensions (Unit : mm)
DTA115GUA
ROHM : UMT3
EIAJ : SC-70
DTA115GKA
ROHM : SMT3
EIAJ : SC-59
Limits
−50
−50
−5
−100
200
150
SMT3
K19
T146
3000
Unit
V
V
V
mA
mW
°C
°C
)
1
(
0.65
)
2
2.0
)
3
(
0.3
1.25
2.1
0.15
0.1Min.
0~0.1
)
3
(
0.4
1.6
2.8
0.15
0.3Min.
0.1
~
0
1.3
(
0.65
0.2
0.9
0.7
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
)
1
(
1.9
2.9
)
2
(
0.95 0.95
1.1
0.8
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
DTA115GUA / DTA115GKA
Transistors
zElectrical characteristics (T a=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
C
= −50µA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Emitter-base resistance
Transition frequency
∗ Trans
ition frequency of the device.
zElectrical characteristics curves
1k
V
CE
=5V
500
FE
200
100
50
20
10
DC CURRENT GAIN : h
5
2
1
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
Fig.1 DC current gain
vs. Collector current
Ta=100°C
COLLECTOR CURRENT : I
Ta= −40°C
BV
BV
BV
I
CBO
I
EBO
V
CE(sat)
Ta=25°C
C
(A)
CBO
CEO
EBO
h
FE
R
f
T
−50
−50
−5
−
−30
−
82
70
−
−
−
−
−
−
−
−
100
250
(V)
)
sat
(
CE
COLLECTOR SATURATION VOLTAGE : V
−
−
−
−0.5
−58
−0.3
−
130
−
1
IC/I
B
=20/1
500m
200m
100m
50m
20m
10m
5m
2m
1m
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
COLLECTOR CURRENT : I
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
V
V
V
µA
µA
V
−
kΩ
MHz
I
I
C
= −1mA
I
E
= −72µA
V
CB
= −50V
V
EB
= −4V
C
= −5mA, IB= −0.25mA
I
C
= −5mA, VCE= −5V
I
−
V
CE
= −10V, IE=5mA, f=100MHz
Ta=100°C
Ta=25°C
Ta= −40°C
C
(A)
∗
Rev.A 2/2
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