ROHM DTA114YUB Schematic [ru]

Transistors ! !!!!!! !!DTA114YUB

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-100mA / -50V Digital transistors
(with built-in resistors)

DTA114YUB

Applications

Inverter, Interface, Driver

Dimensions (Unit : mm)

UMT3F

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Features

1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for
operation, making the device design easy.

Structure

PNP silicon epitaxial planar transistor type

(Resistor built-in)

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Packaging specifications

UMT3F

TL

3000

Part No.

DTA114YUB

Package

Packaging type Taping

Code

Basic ordering unit (pieces)

(1) IN
(2) GND
(3) OUT

Equivalent circuit

IN

IN

R1=10kΩ, R2=47kΩ

0.32

0.4250.425

2.1

1.25

0.65 0.65

Abbreviated symbol : 54

R

1

R

2

2.0

(3)

(1) (2)

1.3

OUT

GND(+)

OUT

GND(+)

0.9

0.530.53

0.13

Each lead has same dimensions

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Absolute maximum ratings (Ta=25qC)

Parameter Symbol

V

Supply voltage

Input voltage

Collector current

Output current

Power dissipation

Junction temperature

Range of storage temperature

Characteristics of built-in transistor

∗1
∗2

Each terminal mounted on a recommended land

CC

IN

V

IC(max.)

O

I

PD

Tj

Tstg

UnitLimits

−50

∗1

∗2

−40 to +6

−100

−70

200

150

−55 to +150

V

V

mA

mA

mW

°C

°C

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Transistors ! !!!!!! !!DTA114YUB

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Electrical characteristics (Ta=25qC)

Parameter Symbol

V

−10m

V

V

O(on)

I

O(off)

G

R

R2/R

VO=−0.3V

O

(A)

I(off)

I(on)

I

f

Input voltage

Output voltage

Input current

Output current

DC current gain

Transition frequency

Input resistance

Resistance ratio

∗ Characteristics of built-in transistor

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Electrical characteristic curves

−100

−50

−20

(V)

I(on)

−10

−5

Ta=−40°C

25°C

−2

−1

−500m

INPUT VOLTAGE : V

−200m

−100m

−100μ

100°C

−1m

−200μ

−2m −20m−500μ−5m −50m

OUTPUT CURRENT : I

Fig.1 Input voltage vs. output current

(ON characteristics)

−1

−500m

(V)

−200m

O(on)

−100m

−50m

−20m

−10m

−5m

OUTPUT VOLTAGE : V

−2m

−1m

−100μ

−1m

−200μ

OUTPUT CURRENT : I

Ta=100°C

25°C

−40°C

−2m −20m−500μ−5m −50m

−10m

O

lO/lI=20

(A)

Fig.4 Output voltage vs. output

current

I

I

T

1

1

−100m

−100m

Typ. Max. Unit Conditions

Min.

−

−1.4

−

−

−

68

−

7

3.7

!

−0.3

−

−

−

−300

−100

−880

−

−500

−

−

−

−

250

13

10

5.7

4.7

−10m

−5m

−2m

(A)

−1m

−500μ

−200μ

−100μ

−50μ

−20μ

−10μ

OUTPUT CURRENT : Io

−5μ

−2μ

−1μ
0 −3.0

−0.5 −1.0 −1.5 −2.0 −2.5

INPUT VOLTAGE : V

V

CC

V

V

O

=−0.3V, IO=−1mA

O

=−5mA, II=−0.25mA

mV

I

V

μA

I

=−5V

nA

V

CC

−

O

=−5V, IO=−5mA

V

CE

MHz

V

kΩ

−−

Ta=100°C

25°C

−40°C

Fig.2 Output current vs. input voltage

(OFF characteristics)

=−5V, IO=−100μA

=−50V, VI=0V

=−10V, IE=5mA, f=100MHz∗

−

VCC=−

5V

I(off)

(V)

1k

500

I

200

100

50

20

10

5

DC CURRENT GAIN : G

2

1

−100μ−1m −10m −100m

Ta=100°C

25°C

−40°

C

−200μ−2m −20m−500μ−5m −50m

OUTPUT CURRENT : I

O

(A)

VO=−5V

Fig.3 DC current gain vs. output

current

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