ROHM DTA114YEB Schematic [ru]

Transistors DTA114YEB
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-100mA / -50V Digital transistors (with built-in resistors)
DTA114YEB
Inverter, Interface, Driver
Dimensions (Unit : mm)
EMT3F
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Features
1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3)Only the on/off conditions need to be set for operation, making the device design easy.
Structure
PNP silicon epitaxial planar transistor type
(Resistor built-in)
Packaging specifications
z
EMT3F
TL
3000
Part No. DTA114YEB
Package Packaging type Taping Code Basic ordering unit (pieces)
1.6
(1) IN (2) GND (3) OUT
Equivalent circuit
R
1
IN
R
2
IN
R1=10kΩ, R2=47kΩ
1.6
0.26 (3)
0.37
0.86
(1) (2)
0.37
0.5 0.5
1.0
Abbreviated symbol : 54
OUT
GND(+)
OUT
+)
GND(
0.7
0.45
0.13
Each lead has same dimensions
0.45
z
Absolute maximum ratings (T a=25qC)
Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Storage temperature
1 Characteristics of built-in transistor2 Each terminal mounted on a recommended land
V
V
Io
P
Tj
Tstg
CC
IN
1
2
D
LimitsParameter Symbol
50
40 to +6
100 mAIc(max)
70
150 150
55 to +150
Unit
V V
mA
mW
°C °C
1/2
Transistors DTA114YEB
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Electrical characteristics (Ta=25qC)
Parameter Symbol
Input voltage
Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio
Characteristics of built-in transistor
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Electrical characteristic curves
100
50
20
(V)
I(on)
10
5
Ta=−40°C
25°C
2
1
500m
INPUT VOLTAGE : V
200m
100m
100μ
100°C
1m
200μ
2m 20m500μ−5m −50m
OUTPUT CURRENT : I
10m
O
(A)
Fig.1 Input voltage vs. output current
(ON characteristics)
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
f
T
R
1
R2/R
1
VO=−0.3V
Min.
Typ. Max. Unit Conditions
300
1.4
100
68
7
3.7
10m
(A)
500μ
200μ
100μ
OUTPUT CURRENT : Io
100m
250
10
4.7
5m
2m
1m
50μ
20μ
10μ
5μ
2μ
1μ
0 3.0
mV
V
300
mV
880
μA
500
nA
MHz
13
kΩ
5.7
−−
Ta=100°C
25°C
40°C
0.5 1.0 1.5 2.0 2.5
INPUT VOLTAGE : V
Fig.2 Output current vs. input voltage
(OFF characteristics)
V
CC
=−5V, IO=−100μA
V
O
=−0.3V, IO=−1mA
I
O/II
=−5mA/0.25mA
V
I
=−5V
V
CC
=−50V, VI=0V
O
=−5V, IO=−5mA
V
CE
=−10V, IE=5mA, f=100MHz
V
V
CC
=−
I(off)
(V)
5V
I
DC CURRENT GAIN : G
1k
500 200
100
50
20 10
5
2 1
100μ−1m 10m 100m
Ta=100°C
25°C
40°C
200μ−2m −20m500μ−5m −50m
OUTPUT CURRENT : I
O
(A)
VO=−5V
Fig.3 DC current gain vs. output
current
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1
500m
(V)
200m
O(on)
100m
50m
20m
10m
5m
OUTPUT VOLTAGE : V
2m
1m
100μ
200μ
Ta=100°C
25°C
40°C
1m
2m 20m500μ−5m −50m
10m
OUTPUT CURRENT : I
Fig.4 Output voltage vs. output
current
O
lO/lI=20
100m
(A)
2/2
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