ROHM DTA114WE, DTA114WKA, DTA114WSA, DTA114WUA Schematic [ru]
DTA114WE / DTA114WUA / DTA114WKA / DTA114WSA
Transistors
-100mA / -50V Digital transistors (with built-in resistors)
DTA114WE / DTA114WUA / DTA114WKA / DTA114WSA
zApplications zExternal dimensions (Unit : mm)
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input,
and parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
4) Higher mounting densities can be achieved.
zStructure
PNP epitaxial planar silicon transistor (Resistor built-in type)
zPackaging specifications
EMT3
UMT3
SMT3
T146
3000
−
−
−
SPT
Taping
TP
5000
−
−
−
Part No.
DTA114WE
DTA114WUA
DTA114WKA
DTA114WSA
Package
Packaging type
Code
Basic ordering unit (pieces)
Taping
TL
3000
−
−
−
Taping
T106
3000
−
−
−
Taping
zEquivalent circuit
EMT3
(SC-75A)
<SOT-416>
(1) GND
(2) IN
(3) OUT
UMT3
<SC-70>
(1) GND
(2) IN
(3) OUT
SMT3
<SC-59>
(1) GND
(2) IN
(3) OUT
1.6
0.3
(3)
0.8
(2)
0.2
(1)
0.2
0.5
0.5
1.0
Abbreviated symbol : 74
2.0
0.3
(3)
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : 74
2.9
0.4
(3)
(2)
0.95 0.95
Abbreviated symbol : 74
(1)
1.9
0.7
0.55
1.6
0.15
Each lead has same dimensions
0.2
1.25
Each lead has same dimensions
1.6
2.8
Each lead has same dimensions
0.1Min.
0.9
0.7
2.1
0.15
1.1
0.15
0.1Min.
0.8
0.3Min.
R
1
IN
R
2
IN
R1=10kΩ, R2=4.7kΩ
GND(+)
OUT
GND(+)
OUT
SPT
(SC-72)
(1) GND
(2) OUT
(3) IN
4.0 2.0
3.0
3Min.
0.45
(15Min.)
2.5
5.0
(1) (2) (3)
Abbreviated symbol : A114WS
0.45
0.5
Taping specifications
Rev.B 1/2
DTA114WE / DTA114WUA / DTA114WKA / DTA114WSA
Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Power
dissipation
Junction temperature
Storage temperature
zExternal characteristics (Unit: mm)
Input voltage
Output voltage
Input current
Output current
DC current
Input resistance
Resistance ratio
Transition frequency
Characteristics of built-in transistor
∗
zElectrical characteristics curves
−100
−50
(V)
−20
I(on)
−10
−5
−2
−1
INPUT VOLTAGE : V
−500m
−200m
−100m
−100µ−1m −10m −100m
Fig.1 Input voltage vs. Output current
(ON characteristics)
−1
−500m
(V)
O(on)
−200m
−100m
−50m
OUTPUT VOLTAGE : V
DTA114WE
DTA114WUA / DTA114WKA
DTA114WSA
Parameter Symbol Min. Typ. Max. Unit Conditions
V
V
V
O(on)
I
O(off)
gain
G
R
R
2/R1
VO= −0.3V
Ta= −40°C
Ta= 25°C
Ta=100°C
OUTPUT CURRENT : I
Ta=100°C
Ta= 25°C
O
(A)
IO / II= 20
Ta= −40°C
Symbol
V
CC
V
I
I
O
I
C(Max.)
Limits
−50
−30 to +10
−100
−100
150
P
D
200
300
−55 to +150
−
−0.1
−
−
−
10
150
−0.8
−0.3
−0.88
−0.5
−
13
I(off)
I(on)
I
Tj
Tstg
−
−3 −−
−
I
−
−
I
1
24
7
0.37 0.47 0.57 −−
∗
f
T
−10m
(A)
O
−500µ
−200µ
−100µ
OUTPUT CURRENT : I
−5m
−2m
−1m
−50µ
−20µ
−10µ
−5µ
−2µ
−1µ
−
0.5
VCC= −5V
−
Ta=100°C
Ta=25°C
−
1
INPUT VOLTAGE : V
250
−
1.5
−
Ta= −40°C
−
3
−
2.5
−
2
(V)
I(off)
Fig.2 Output current vs. Input voltage
(OFF characteristics)
Unit
V
V
mA
mW
°C
°C
V
CC
=
−5V , I
O
=
V
V
mA
µA
−
kΩ
MHz
V
I
V
V
I
V
−
3.5
O
=
−0.3V , I
O
=
−10mA , I
I
=
−5V
CC
=
−50V , V
O
=
−10mA , V
CE
=
−10V , I
1k
500
I
200
100
50
20
10
DC CURRENT GAIN : G
5
2
1
−100µ−1m −10m −100m
−100µA
O
=
−2mA
I
=
−0.5mA
I
=
0V
O
=
−5V
−
E
=
5mA , f=100MHz
Ta= 25°C
OUTPUT CURRENT : I
Fig.3 DC current gain vs. Output current
VO= −5V
Ta=100°C
Ta= −40°C
O
(A)
−20m
−1m −10m −100m
OUTPUT CURRENT : I
Fig.4 Output voltage vs. Output current
O
(A)
Rev.B 2/2
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