ROHM DTA114WE, DTA114WKA, DTA114WSA, DTA114WUA Schematic [ru]

DTA114WE / DTA114WUA / DTA114WKA / DTA114WSA

Transistors

-100mA / -50V Digital transistors (with built-in resistors)

DTA114WE / DTA114WUA / DTA114WKA / DTA114WSA

zApplications zExternal dimensions (Unit : mm)
Inverter, Interface, Driver

zFeatures

1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.

2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input,
and parasitic effects are almost completely eliminated.

3) Only the on / off conditions need to be set for operation,
making the device design easy.

4) Higher mounting densities can be achieved.

zStructure

PNP epitaxial planar silicon transistor (Resistor built-in type)

zPackaging specifications

EMT3

UMT3

SMT3

T146

3000

−

−

−

SPT

Taping

TP

5000

−

−

−

Part No.

DTA114WE

DTA114WUA
DTA114WKA
DTA114WSA

Package

Packaging type

Code

Basic ordering unit (pieces)

Taping

TL

3000

−

−

−

Taping

T106

3000

−

−

−

Taping

zEquivalent circuit

EMT3

(SC-75A)
<SOT-416>

(1) GND

(2) IN

(3) OUT

UMT3

<SC-70>

(1) GND
(2) IN
(3) OUT

SMT3

<SC-59>

(1) GND
(2) IN
(3) OUT

1.6

0.3

(3)

0.8

(2)

0.2

(1)

0.2

0.5

0.5

1.0

Abbreviated symbol : 74

2.0

0.3

(3)

(1)

(2)

0.65

0.65

1.3

Abbreviated symbol : 74

2.9

0.4

(3)

(2)

0.95 0.95

Abbreviated symbol : 74

(1)

1.9

0.7

0.55

1.6

0.15

Each lead has same dimensions

0.2

1.25

Each lead has same dimensions

1.6

2.8

Each lead has same dimensions

0.1Min.

0.9

0.7

2.1

0.15

1.1

0.15

0.1Min.

0.8

0.3Min.

R

1

IN

R

2

IN

R1=10kΩ, R2=4.7kΩ

GND(+)

OUT

GND(+)

OUT

SPT

(SC-72)

(1) GND

(2) OUT

(3) IN

4.0 2.0

3.0

3Min.

0.45

(15Min.)

2.5

5.0

(1) (2) (3)

Abbreviated symbol : A114WS

0.45

0.5

Taping specifications

Rev.B 1/2

DTA114WE / DTA114WUA / DTA114WKA / DTA114WSA

Transistors

zAbsolute maximum ratings (Ta=25°C)

Parameter

Supply voltage

Input voltage

Output current

Power
dissipation

Junction temperature

Storage temperature

zExternal characteristics (Unit: mm)

Input voltage

Output voltage

Input current

Output current

DC current

Input resistance

Resistance ratio

Transition frequency

Characteristics of built-in transistor

∗

zElectrical characteristics curves

−100

−50

(V)

−20

I(on)

−10

−5

−2

−1

INPUT VOLTAGE : V

−500m

−200m

−100m

−100µ−1m −10m −100m

Fig.1 Input voltage vs. Output current
(ON characteristics)

−1

−500m

(V)

O(on)

−200m

−100m

−50m

OUTPUT VOLTAGE : V

DTA114WE

DTA114WUA / DTA114WKA

DTA114WSA

Parameter Symbol Min. Typ. Max. Unit Conditions

V

V

V

O(on)

I

O(off)

gain

G

R

R

2/R1

VO= −0.3V

Ta= −40°C

Ta= 25°C

Ta=100°C

OUTPUT CURRENT : I

Ta=100°C

Ta= 25°C

O

(A)

IO / II= 20

Ta= −40°C

Symbol

V

CC

V

I

I

O

I

C(Max.)

Limits

−50

−30 to +10

−100

−100

150

P

D

200

300

−55 to +150

−

−0.1

−

−

−

10

150

−0.8

−0.3

−0.88

−0.5

−

13

I(off)

I(on)

I

Tj

Tstg

−

−3 −−

−

I

−

−

I

1

24

7

0.37 0.47 0.57 −−

∗

f

T

−10m

(A)

O

−500µ

−200µ

−100µ

OUTPUT CURRENT : I

−5m

−2m

−1m

−50µ

−20µ

−10µ

−5µ

−2µ

−1µ

−

0.5

VCC= −5V

−

Ta=100°C

Ta=25°C

−

1

INPUT VOLTAGE : V

250

−

1.5

−

Ta= −40°C

−

3

−

2.5

−

2

(V)

I(off)

Fig.2 Output current vs. Input voltage

(OFF characteristics)

Unit

V

V

mA

mW

°C

°C

V

CC

=

−5V , I

O

=

V

V

mA

µA

−

kΩ

MHz

V
I

V

V

I

V

−

3.5

O

=

−0.3V , I

O

=

−10mA , I

I

=

−5V

CC

=

−50V , V

O

=

−10mA , V

CE

=

−10V , I

1k

500

I

200

100

50

20

10

DC CURRENT GAIN : G

5

2

1

−100µ−1m −10m −100m

−100µA

O

=

−2mA

I

=

−0.5mA

I

=

0V

O

=

−5V

−

E

=

5mA , f=100MHz

Ta= 25°C

OUTPUT CURRENT : I

Fig.3 DC current gain vs. Output current

VO= −5V

Ta=100°C

Ta= −40°C

O

(A)

−20m

−1m −10m −100m

OUTPUT CURRENT : I

Fig.4 Output voltage vs. Output current

O

(A)

Rev.B 2/2