ROHM DTA114TUB Schematic [ru]
Transistors ! !!!!!! !!DTA114TUB
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-100mA / -50V Digital transistors
(with built-in resistors)
DTA114TUB
Applications
Inverter, Interface, Driver
Dimensions (Unit : mm)
UMT3F
z
Features
1)Built-in bias resistors enable the configuratio n of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
2)The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
3)Only the on/off conditions need to be set for
operation, making the device design easy.
Structure
PNP silicon epitaxial planar transistor type
(Resistor built-in)
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Packaging specifications
UMT3F
TL
3000
Part No.
DTA114TUB
Package
Packaging type Taping
Code
Basic ordering unit (pieces)
(1) Base
(2) Emitter
(3) Collector
Equivalent circuit
B
B : Base
C : Collector
E : Emitter
R
1
=10kΩ
2.0
0.32
(3)
0.4250.425
2.1
1.25
(1) (2)
0.65 0.65
1.3
Abbreviated symbol : 94
R
1
0.9
0.530.53
0.13
Each lead has same dimensions
C
E
z
Absolute maximum ratings (Ta=25qC)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Each terminal mounted on a recommended land
∗
∗
V
V
V
P
Tstg
CBO
CEO
EBO
C
I
Tj
UnitLimits
−50
−50
−5
−100
D
200
150
−55 to +150
V
V
V
mA
mW
°C
°C
1/2
Transistors ! !!!!!! !!DTA114TUB
z
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!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!
Electrical characteristics (Ta=25qC)
Parameter Symbol
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Input resistance
∗ Characteristics of built-in transistor
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Electrical characteristic curves
1k
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
−100μ−1m −10m −100m
Ta=100°C
25°C
−40°C
−200μ−2m −20m−500μ−5m −50m
COLLECTOR CURRENT : I
Fig.1 DC current gain vs. collector
current
BV
CEO
CBO
BV
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
R
1
V
C
(A)
!!!
CE
=−
5V
Typ.
Min.
−50
−50
−5
−
−
−
100
−
7
−1
(V)
−500m
CE(sat)
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
COLLECTOR SATURATION VOLTAGE : V
−100μ−1m −10m −100m
Max. Unit Conditions
C
=−1mA
V
VI
V
nA
nA
V
−
MHz
kΩ
25°C
−40°C
I
C
=−50μA
I
E
=−50μA
V
CB
V
EB
C
=−10mA, IB=−1mA
I
CE
V
V
CE
lC/lB=20
C
(A)
−
−
−
−
−
−
−500
−
−500
−
−0.3
−
600
250
−
250
13
10
=100°C
Ta
−200μ−2m −20m−500μ−5m −50m
COLLECTOR CURRENT : I
Fig.2 Collector-emitter saturation
voltage vs. collector current
=−50V
=−4V
=−5V, IC=−1mA
=−10V, IE=5mA, f=100MHz∗
−
2/2
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