ROHM DTA114TEB Schematic [ru]
Transistors ! DTA114TEB
z
z
z
z
z
z
z
!!!!!!!!!!!!!!
-100mA / -50V Digital transistors
(with built-in resistors)
DTA114TEB
Applications
Inverter, Interface, Driver
Dimensions (Unit : mm)
EMT3F
z
Features
1)Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
2)The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
3)Only the on/off conditions need to be set for
operation, making the device design easy.
Structure
PNP silicon epitaxial planar transistor type
(Resistor built-in)
z
Packaging specifications
EMT3F
TL
3000
Part No.
DTA114TEB
Package
Packaging type Taping
Code
Basic ordering unit (pieces)
(1) Base
(2) Emitter
(3) Collector
Equivalent circuit
B
R
B : Base
C : Collector
E : Emitter
R
1
=10kΩ
0.26
(3)
0.37
1.6
0.86
(1) (2)
0.37
0.5 0.5
Abbreviated symbol : 94
1
1.6
1.0
0.7
0.45
0.13
Each lead has same dimensions
0.45
C
E
z
Absolute maximum ratings (T a=25qC)
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Power dissipation
Junction temperature
Range of Storage temperature
∗1 Each terminal mounted on a recommended land
V
CBO
V
CEO
EBO
I
P
Tj
Tstg
C
∗1
D
LimitsParameter Symbol
−50
−50
−5VV
−100
150
150
−55 to +150
Unit
V
V
mA
mW
°C
°C
1/2
Transistors ! DTA114TEB
z
z
!!!!!!!!!!!!!!
Electrical characteristics (Ta=25qC)
Parameter Symbol
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
∗ Characteristics of built-in transistor
z
Electrical characteristic curves
1k
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
−100μ−1m −10m −100m
Ta=100°C
25°C
−40°C
−200μ−2m −20m−500μ−5m −50m
COLLECTOR CURRENT : I
Fig.1 DC current gain vs. collector
current
C
V
(A)
BV
BV
BV
I
CBO
I
EBO
V
CE(sat)
h
R
CE
=−
5V
Min.
Typ.
Max. Unit Conditions
CEO
−50
−
CBO
−50
−
EBO
−5
−
−
−
−
FE
100
f
T
−
1
7
−1
(V)
−500m
CE(sat)
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
COLLECTOR SATURATION VOLTAGE : V
−100μ−1m −10m −100m
−500
−
−500
−
−
250
250
10
−200μ−2m −20m−500μ−5m −50m
COLLECTOR CURRENT : I
Fig.2 Collector-emitter saturation
voltage vs. collector current
−
−
−
−0.3
600
−
13
Ta
=100°C
25°C
−40°C
MHz
C
V
I
C
VI
I
V
E
nA
V
CB
nA
V
EB
V
C/IB
I
−
CE
V
CE
V
kΩ
C
(A)
=−1mA
=−50μA
=−50μA
=−50V
=−4V
=−10mA/−1mA
=−5V, IC=−1mA
=−10V, IE=5mA, f=100MHz∗
−
lC/lB=20
2/2
Loading...